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    TPCF8103 Price and Stock

    Toshiba America Electronic Components TPCF8103(TE85L,F)

    TRANSISTOR (Also Known As: TPCF8103)
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    TPCF8103 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPCF8103 Toshiba MOSFET TPC Series Original PDF
    TPCF8103 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPCF8103 Toshiba Pch Power MOSFET; Surface Mount Type: Y; Package: VS-8; R DS On (max 0.3) (max 0.16) (max 0.11); I_S (A): (max -2.7) Original PDF

    TPCF8103 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    47S marking code transistor

    Abstract: TPCF8103
    Text: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7S (typ.)


    Original     		PDF TPCF8103 47S marking code transistor TPCF8103

    TPCF8103

    Abstract: No abstract text available
    Text: TPCF8103 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPCF8103 ○ ノートブック PC 用 ○ 携帯電子機器用 単位: mm • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 72 mΩ (標準) ( VGS =−4.5V)


    Original     		PDF TPCF8103 TPCF8103

    TPCF8103

    Abstract: No abstract text available
    Text: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 72 mΩ (typ.)( VGS =-4.5V) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		PDF TPCF8103 TPCF8103

    transistor marking 47s

    Abstract: No abstract text available
    Text: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7S (typ.)


    Original     		PDF TPCF8103 transistor marking 47s

    TPCF8103

    Abstract: No abstract text available
    Text: TPCF8103 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPCF8103 ○ ノートブック PC 用 ○ 携帯電子機器用 単位: mm • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 72 mΩ (標準)


    Original     		PDF TPCF8103 TPCF8103

    TPCF8103

    Abstract: No abstract text available
    Text: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		PDF TPCF8103 TPCF8103

    Untitled

    Abstract: No abstract text available
    Text: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7S (typ.)


    Original     		PDF TPCF8103

    TPCF8103

    Abstract: No abstract text available
    Text: TPCF8103 ＴＯＳＨＩＢＡ TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U−MOSⅢ ＴＰＣＦ８１０３ Ｔｅｎｔａｔｉｖｅ NOTE BOOK PC APPLICATIONS PORTABLE EQUIPMENTS APPLICATIONS UNIT:mm ・Low Drain - Source ON Resistance：ＲＤＳ(ＯＮ)＝72ｍΩ(Typ.)


    Original     		PDF TPCF8103 Current-10 VDD-10V CHARACTERISTICSTa25 TPCF8103

    toshiba a4 code

    Abstract: Marking Code A27 DIODE
    Text: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7S (typ.)


    Original     		PDF TPCF8103 toshiba a4 code Marking Code A27 DIODE

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    tpc8107

    Abstract: tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002
    Text: Power MOSFETs TPC Series PRODUCT GUIDE Toshiba Power Compact Series devices have been developed for use in high-speed switching applications and in various interfaces. Toshiba has developed this high-efficiency low ON-resistance series using processes specially formulated to ensure that the devices can be used in


    Original     		PDF 3525C-0209 tpc8107 tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent