Contextual Info: TSM2312 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY RDS on (mΩ) VDS (V) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

Contextual Info: TAIW AN TSM2312 s SEMICONDUCTOR fpbj RoHS V -X 20V N-Channei MOSFET CO M PLIANCE PRODUCT SUMMARY SO T-23 P in D e fin itio n : V ds V 1. Gate 2. Source 3. Drain 20 1 2 F ea tu res A dvance Trench Proce s s T ech n o logy • High D ensity Cell Design fo r U ltra Low O n-resistance

DIODE FS 607

Abstract: marking j9 sot-23 sot-23 package marking J9 TSM2312CX TSM2312 1Q1 SOT 6u sot-23
Contextual Info: s TAIWAN pb RoHS TSM2312 S E M IC O N D U C T O R 20V N-Channei MOSFET CO M PLIANCE PRODUCT SUMMARY SOT-23 3 P in D e fin itio n : V ds (V) 1. Gate 2. Source 3. Drain 20 1 2 Features RDS(on)(mÛ) Id (A) 33 @ Vgs= 4 .5V 4.9 4Û @ Vos = 2.5V 4.4 51 @ V g »= 1.8V

TSM2312

Abstract: TSM2312CX
Contextual Info: TSM2312 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

TSM2312CX

Abstract: TSM2312
Contextual Info: TSM2312 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS on , Vgs @ 4.5V, Ids @ 5.0A = 33mΩ RDS (on), Vgs @ 2.5V, Ids @ 4.0A = 40mΩ Features Advanced trench process technology Excellent thermal and electrical capabilities