TSOP5038
Abstract: TSAL6200 IR Receiver Module 04FEB11
Text: TSOP5038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals • Shielding against EMI 1 2 3 4 • Supply voltage: 2.7 V to 5.5 V
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TSOP5038
2002/95/EC
2002/96/EC
TSOP5038
11-Mar-11
TSAL6200
IR Receiver Module
04FEB11
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TSOP50
Abstract: No abstract text available
Text: SANYO Semiconductor Thin Small Outline Package 50Pin Plastic TSOP50 400mil Precautions concerning information given on package drawings Basically, SANYO Semiconductor Company’s packages are named and coded in compliance with JEITA regulations (ED-7303A), which stipulate the names and codes for integrated circuit packages. However, the
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50Pin
TSOP50
400mil)
ED-7303A)
27MAX
TSOP50
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Untitled
Abstract: No abstract text available
Text: Not for New Design TSOP5038 www.vishay.com Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector package and preamplifier in one • Internal filter for 38 kHz IR signals • Shielding against EMI
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PDF
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TSOP5038
2011/65/EU
2002/96/EC
TSOP5038
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Not for New Design TSOP5038 www.vishay.com Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector package and preamplifier in one • Internal filter for 38 kHz IR signals • Shielding against EMI
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Original
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PDF
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TSOP5038
2011/65/EU
2002/96/EC
TSOP5038
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: TSOP5038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals • Shielding against EMI 1 2 3 4 • Supply voltage: 2.7 V to 5.5 V
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PDF
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TSOP5038
2002/95/EC
2002/96/EC
TSOP5038
18-Jul-08
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DMA5
Abstract: tsop50 MD50 U-509 SO-DIMM 144-pin KM416V4104A U5-12 U509
Text: 2 3 4 GND GND GND GND 3,5 3,5 3,5 D_RAS2# D_CAS3# D_CAS2# 3,5 D_MWEB# 26 39 45 50 KM416V4104A TSOP50 GND RAS# UCAS# LCAS# OE# W# NC NC NC NC NC NC DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 VCC VCC VCC VCC GND GND GND GND 2 3 4 5
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MA10/0
MA11/1
4mx16
1mx16
0603B
0603B
DMA5
tsop50
MD50
U-509
SO-DIMM 144-pin
KM416V4104A
U5-12
U509
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tsop50
Abstract: TSOP-50
Text: SANYO Semiconductor Thin Small Outline Package 50Pin Plastic TSOP50 400mil 外形図情報に関するご注意 三洋半導体パッケージは基本的に JEITA の名称付与規定（ED-7303A）に準じています。 ただし、従来のパッケージに用いている名称については、そのまま継続しています。
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50Pin
TSOP50
400mil)
ED-7303A
27MAX
TSOP50
TSOP-50
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TSOP5038
Abstract: IR Receiver module tsop Ir sensor TSAL6200 circuit diagram for IR receiver
Text: TSOP5038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals • Shielding against EMI 1 2 3 • Supply voltage: 2.7 V to 5.5 V
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Original
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PDF
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TSOP5038
2002/95/EC
2002/96/EC
TSOP5038
18-Jul-08
IR Receiver module
tsop Ir sensor
TSAL6200
circuit diagram for IR receiver
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TSOP6038
Abstract: No abstract text available
Text: Not for New Design - Alternative Available: New TSOP6038 #82483 TSOP5038 www.vishay.com Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals
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Original
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PDF
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TSOP6038
TSOP5038
TSOP5038
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TSOP6038
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IR Receiver Module
Abstract: tsop Ir sensor TSAL6200 TSOP5038
Text: TSOP5038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals • Shielding against EMI 1 2 3 • Supply voltage: 2.7 V to 5.5 V
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Original
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PDF
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TSOP5038
2002/95/EC
2002/96/EC
TSOP5038
18-Jul-08
IR Receiver Module
tsop Ir sensor
TSAL6200
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Untitled
Abstract: No abstract text available
Text: TSOP5038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals e3 • Shielding against EMI 1 2 3 • Supply voltage: 2.7 V to 5.5 V
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TSOP5038
2002/95/EC
2002/96/EC
TSOP5038
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time
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0316409C
0316169C
0316809C
1Mx16
16Mbit
-12ns
545-DRAM;
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Untitled
Abstract: No abstract text available
Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page
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0316409C
0316169C
0316809C
1Mx16
16Mbit
SM2402T-6
SM2403T-6
SM2404T-6
SM2402T-7
SM2403T-7
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TC51V18160
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC51V18160 C S / CFTS - 60 TOSHIBA TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 1,048,576 WORD x16 BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V1S160CJS-CFTS is the fast page dynamic R A M organized 1,048,576 words by 16 bits.
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TC51V18160
TC51V1S160CJS-CFTS
TC51V18160CJS
TC51V18160CJS/CFTS
73MAX
TSOP50-P-400)
875TYP
35MAX
TC51V18160CJS/CFT>
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Untitled
Abstract: No abstract text available
Text: 4M x 16-Bit Dynamic RAM 8k, 4k & 2k Refresh HYB 3164160AT(L) -40/-50/-60 HYB 3165160AT(L) -40/-50/-60 HYB 3166160AT(L) -40/-50/-60 Advanced Information • 4 194 304 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation
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16-Bit
3164160AT
3165160AT
3166160AT
HYB3166160AT
HYB3165160AT
HYB3164160AT
HYB3164
160AT
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f11u
Abstract: FC 0012 TSOP 50 PIN cs-7sa CS7SA k0219 EN5055
Text: Ordering number : EN5055 _ CMOS LSI No. 5055 LC382161T-17 IS ipîppi; 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM J 8¡|lí¡Bí: 1 Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x
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EN5055
LC382161T-17
LC382161
65536-word
16-bit
50-pin
f11u
FC 0012
TSOP 50 PIN
cs-7sa
CS7SA
k0219
EN5055
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 1 7 1 7 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117170 achieves high integration, high-speed operation, and low-power
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MSM5117170
576-Word
16-Bit
MSM5117170
42-pin
50/44-pin
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MSM5116160
Abstract: dq8e N4409
Text: O K I Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low -pow er
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MSM5116160
576-Word
16-Bit
MSM5116160
42-pin
50/44-pin
dq8e
N4409
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5116170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116170 achieves high integration, high-speed operation, and low-power
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MSM5116170
576-Word
16-Bit
MSM5116170
42-pin
50/44-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V16170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51 V16170isal ,048,576-word x 16-bit dy namic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16170 achieves high integration, high-speed operation, and low-power
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MSM51V16170
576-Word
16-Bit
MSM51VI6170
MSM51V16170
42-pin
50/44-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 V1 7 1 6 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCR IPTIO N The MSM51V17160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17160 achieves high integration, high-speed operation, and low-power
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OCR Scan
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MSM51V17160
576-Word
16-Bit
MSM51V17160
42-pin
50/44-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5116160A_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The MSM5116160A is a 1,048,576-word x 16-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power
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MSM5116160A_
576-Word
16-Bit
MSM5116160A
42-pin
50/44-pin
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Untitled
Abstract: No abstract text available
Text: m 'i[m24û D02ô4Db 752 m- TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description TheTC 5118180BJ/B FT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. TheTC 5118180BJ/B FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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m--------------24Ã
TC5118180BJ/BFT-60/70
5118180BJ/B
5118180BJ/BFT
QDBBH12
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TC5118165
Abstract: TC5118165BFT
Text: INTEGRATED TO SH IB A M O S D IG ITA L INTEG RATED CIRCUIT CIRCUIT T C 5 1 1 8 1 6 5 BJ / B F T - 60 T C 5 1 1 8 1 6 5 BJ / BFT - 70 TOSHIBA TECHNICAL TE N TA TIV E D A T A 1 ,0 4 8 ,5 7 6 W O R D x DATA SILICON GATE C M O S 16 BIT HYPER PAGE ED O D Y N A M IC R A M
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TC5118165BJ/BFT
TC511
SOJ42
TC5118165BJ-32
TC5118165
35MAX
TC5118165BFT
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