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    TZY2Z010A001 Price and Stock

    Murata Manufacturing Co Ltd TZY2Z010A001B00

    CAP TRIMMER 0.5-1PF 25V SMD
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    Avnet Abacus TZY2Z010A001B00 Reel 143 Weeks 500
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    Murata Manufacturing Co Ltd TZY2Z010A001R00

    CAP TRIMMER 0.5-1PF 25V SMD
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    DigiKey TZY2Z010A001R00 Reel 2,000
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    Bristol Electronics TZY2Z010A001R00 3,757
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    TZY2Z010A001 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TZY2Z010A001 muRata Ceramic Trimmer Capacitor Original PDF
    TZY2Z010A001B00 muRata Trimmers, Variable Capacitors, Capacitors, CAP TRIMMER 0.5-1PF 25V SMD Original PDF
    TZY2Z010A001B00 muRata Ceramic Trimmer Capacitor Original PDF
    TZY2Z010A001R00 muRata Trimmers, Variable Capacitors, Capacitors, CAP TRIMMER 0.5-1PF 25V SMD Original PDF

    TZY2Z010A001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    25VDC

    Abstract: trimmer 45pF TZY2K450A001
    Text: Capacitors Ceramic Trimmer Capacitors o TZY2 Series 3.2±0.2 1.0 0.95 2.5±0.2 0.45 *1 1.25max. *1 0.5 1.4 *1 : Only 45pF type does not have this shaded area. Tolerancein: ±0.1 mm Cmin. (pF) Cmax. (pF) TC Q Rated Voltage Withstanding Voltage TZY2Z010A001


    Original     		PDF 25max. TZY2Z010A001 TZY2Z2R5A001 TZY2Z030A001 TZY2Z060A001 TZY2Z100A001 TZY2R200A001 TZY2R250A001 TZY2K450A001 300ppm/ 25VDC trimmer 45pF TZY2K450A001

    GRM55DR72J224KW01L

    Abstract: gcm31c GCM31MR71H474KA37 GRM32B7U3D221JW31L LLC219R71C104MA01L GCM216 GCM155 GCM31MR71H334KA37 GRM188 GCM188
    Text: Capacitors Monolithic Ceramic Capacitors GCM_R7 X7R High Dielectric Constant Type X7R 10/16/25/50V g e T e L Part Number GCM033 GCM155 GCM188* GCM216 GCM219 GCM21B GCM319 GCM31M GCM31C GCM32N GCM32R GCM32D GCM32E GCM43R GCM43E GCM55R L 0.6 ±0.03 1.0 ±0.05


    Original     		PDF 10/16/25/50V GCM033 GCM155 GCM188* GCM216 GCM219 GCM21B GCM319 GCM31M GCM31C GRM55DR72J224KW01L gcm31c GCM31MR71H474KA37 GRM32B7U3D221JW31L LLC219R71C104MA01L GCM216 GCM155 GCM31MR71H334KA37 GRM188 GCM188

    QFN36-P-0606-0

    Abstract: TC32306FTG QFN36-P FC102 61012 b00111111 AUTOHD 5275S 5275u rf 315mhz
    Text: TC32306FTG TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC32306FTG Single-Chip RF Transceiver for Low-Power Systems 1. General Description The TC32306FTG is a single-chip RF transceiver, which provides many of the functions required for UHF-band transceiver applications. It has the most features transmiting and


    Original     		PDF TC32306FTG TC32306FTG QFN36-P-0606-0 QFN36-P FC102 61012 b00111111 AUTOHD 5275S 5275u rf 315mhz

    Ceramic Capacitors 104

    Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
    Text: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.


    Original     		PDF K99E-27 Ceramic Capacitors 104 mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1

    Untitled

    Abstract: No abstract text available
    Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please


    Original     		PDF DA-89 KMDR060) KMBT060 100gf]

    Untitled

    Abstract: No abstract text available
    Text: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency


    Original     		PDF EGN21C105I2D 14GHz 14GHz 25deg /-10MHz 45dBm

    EGN26C070I2D

    Abstract: No abstract text available
    Text: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C070I2D 25deg /-10MHz EGN26C070I2D

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please


    Original     		PDF DA-89 KMDR060) KMBT060 100gf]

    Untitled

    Abstract: No abstract text available
    Text: TC32306FTG TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC32306FTG Single-Chip RF Transceiver for Low-Power Systems 1. General Description The TC32306FTG is a single-chip RF transceiver, which provides many of the functions required for UHF-band transceiver applications. It has the most features transmitting


    Original     		PDF TC32306FTG TC32306FTG QFN36-P-0606-0

    Untitled

    Abstract: No abstract text available
    Text: TC32306FTG TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC32306FTG Single-Chip RF Transceiver for Low-Power Systems 1. General Description The TC32306FTG is a single-chip RF transceiver, which provides many of the functions required for UHF-band transceiver applications. It has the most features transmitting


    Original     		PDF TC32306FTG TC32306FTG QFN36-P-0606-0

    B4846

    Abstract: S21 Package GRM188B11H102KA01D CS3376C
    Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 14GHz EGN21C105I2D /-10MHz 45dBm /-10MHz B4846 S21 Package GRM188B11H102KA01D CS3376C

    TRIMMER capacitor

    Abstract: trimmer 3-30 pf smd code capacitor color trimmer capacitor ceramic 22 pf trimmer capacitor datasheet 100 RTV silicone rubber ceramic trimmer capacitor plastic trimmer capacitor 100 micro farad capacitor K450
    Text: !Note Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this PDF catalog to prevent smoking and/or burning, etc. This catalog has only typical specifications. Therefore, you are requested to approve our product specifications or to transact the approval sheet for product specifications before ordering.


    Original     		PDF T13E-9 T13E9 TRIMMER capacitor trimmer 3-30 pf smd code capacitor color trimmer capacitor ceramic 22 pf trimmer capacitor datasheet 100 RTV silicone rubber ceramic trimmer capacitor plastic trimmer capacitor 100 micro farad capacitor K450

    GRM1882C1H100J

    Abstract: No abstract text available
    Text: SGN27C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF SGN27C210I2D 655GHz /-10MHz 48dBm GRM1882C1H100J

    Untitled

    Abstract: No abstract text available
    Text: TC32306FTG TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC32306FTG Single-Chip RF Transceiver for Low-Power Systems 1. General Description The TC32306FTG is a single-chip RF transceiver, which provides many of the functions required for UHF-band transceiver applications. It has the most features transmiting and


    Original     		PDF TC32306FTG TC32306FTG QFN36-P-0606-0

    6-10 Ghz RF Power 100w amplifier

    Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
    Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C070I2D /-10MHz 6-10 Ghz RF Power 100w amplifier 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114

    CS3376C

    Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101
    Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN35C070I2D 43dBm /-10MHz CS3376C GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101

    TZY2Z2R5A001

    Abstract: TZY2K450 K450 10pf trimmer capacitor
    Text: T13E9.pdf 04.6.15 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF


    Original     		PDF T13E9 DA-89 KMDR060) KMBT060 100gf) TZY2Z2R5A001 TZY2K450 K450 10pf trimmer capacitor

    Untitled

    Abstract: No abstract text available
    Text: Capacitors Ceramic Trimmer Capacitors o TZY2 Series Applied product to ELV. RoHS 3.2±0.2 1.0 0.95 2.5±0.2 0.45 *1 1.25max. *1 0.5 1.4 *1 : Only 45pF type does not have this shaded area. (Tolerancein: ±0.1 mm) Cmin. (pF) Cmax. (pF) TC Q Rated Voltage Withstanding


    Original     		PDF 25max. TZY2Z010A001 TZY2Z2R5A001 TZY2Z030A001 TZY2Z060A001 TZY2Z100A001 TZY2R200A001 TZY2R250A001 TZY2K450A001 300ppm/

    2S110

    Abstract: GRM188B11H102KA01D
    Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C070I2D /-10MHz /-10MHz 2S110 GRM188B11H102KA01D

    EKZE101

    Abstract: No abstract text available
    Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 14GHz EGN21C210I2D /-10MHz 48dBm /-10MHz EKZE101

    GRM1882C1H100J

    Abstract: No abstract text available
    Text: EGN16C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN16C105MK 25deg D10MHz 45dBm /-10MHz GRM1882C1H100J

    RTV silicone rubber

    Abstract: TZY2Z100A tzb4z030pp10 ceramic trimmer capacitors application manual futaba test ceramic-trimmer TZR1R080A001 TZR1Z040A001 power control circuit 220vdc Z040
    Text: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. T13E7.pdf 02.3.26


    Original     		PDF T13E7 T13E-7 RTV silicone rubber TZY2Z100A tzb4z030pp10 ceramic trimmer capacitors application manual futaba test ceramic-trimmer TZR1R080A001 TZR1Z040A001 power control circuit 220vdc Z040