U1DL49

Abstract: U15B U15C U1BC44 U1CL49 U1DL44A U1DZ41 U1GC44 U1GU44 U1GZ41
Contextual Info: - 88- fi B TVR4N TVR5B TV85D TVR5G TVR5J U1BC44 U1BZ41 U1CL49 U1DL44A U1DL49 U1DZ41 U1GC44 U1GU44 U1GZ41 U1JC44 U1JU44 U1JZ41 U03R-12 UG3R-16 U03R-2 U03R-20 U03R-4 U03R-8 UOSB U05C UOSE U05G U05GH44 1305 J U05JH44 UQSNH44 U05NU44 U05TH44 U06C U06E U06G U06J

U1DL49

Contextual Info: U1DL49 TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE U1DL49 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS l Repetitive Peak Reverse Voltage : VRRM = 200V l Average Forward Current : IF (AV) = 1.0A l Very Fast Reverse−Recovery Time : trr = 60ns (Max)

Contextual Info: U1DL49 TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE U1DL49 SWITCHING MODE POWER SUPPLY APPLICATIONS Unit: mm z Repetitive Peak Reverse Voltage : VRRM = 200V z Average Forward Current : IF (AV) = 1.0A z Very Fast Reverse−Recovery Time : trr = 60ns (Max)

Contextual Info: U1DL49 TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE U1DL49 SWITCHING MODE POWER SUPPLY APPLICATIONS Unit: mm z Repetitive Peak Reverse Voltage : VRRM = 200V : IF (AV) = 1.0A z Very Fast Reverse−Recovery Time : trr = 60ns (Max)

U1DL49

Abstract: TOSHIBA RECTIFIER
Contextual Info: U1DL49 TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE U1DL49 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : VRRM = 200V Average Forward Current : IF (AV) = 1.0A Very Fast Reverse−Recovery Time : trr = 60ns (Max)

22-25L

Abstract: U1DL49 1L20 U15B U15C U1BC44 U1CL49 U1DL44A U1DZ41 U1GC44
Contextual Info: - 88- fi B T V R4N TVR5B T V 85D T VR 5 G TVR5J U 1BC44 U 1BZ41 U1CL49 U 1 DL44A U1DL49 U1DZ41 U1GC44 U1GU44 U1GZ41 U1JC44 U1JU44 U1JZ41 U 0 3 R-12 UG3R-16 U03R-2 % n s V rrmi Vr iFM V (V) (V) (A) * £ *2 m z MZ m z MZ m z m z m z m z m z 750 1000 150 U 0 3 R-20

U1DL49

Contextual Info: U1DL49 TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE U1DL49 SWITCHING MODE POWER SUPPLY APPLICATIONS Unit: mm Repetitive Peak Reverse Voltage : VRRM = 200V Average Forward Current : IF (AV) = 1.0A Very Fast Reverse−Recovery Time : trr = 60ns (Max)

Contextual Info: TO SH IB A U1DL49 TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE U 1 D L49 SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage Vr r m = 200V Average Forward Current If (AV) = 1-oa Very Fast Reverse Recovery Time

Contextual Info: U1DL49 TOSHIBA T O S H IB A HIGH EFFICIENCY RECTIFIER H ED SILICON EPIT A X IA L JU N C T IO N T Y PE U1DL49 Unit in mm SW IT C H IN G T Y PE P O W E R S U PP LY A PPLIC A T IO N S V r r m = 200V Repetitive Peak Reverse Voltage Average Forward Current ! f (AV) = 1-0A

Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE HED O • • • • • U1DL49 U nit in mm SW ITCHING TYPE PO W ER SUPPLY APPLICATIONS. Repetitive Peak Reverse Voltage : VjyjM = 200V Average Forward C urrent : If (AV) = 1 0A Very Past Reverse Recovery Time : tr r =60ns

U15C

Abstract: U03R-12 U05E U15B U1DZ41 U1BC44 U1CL49 U1DL44A U1DL49 U1GC44
Contextual Info: - 88- fi B T V R4N TVR5B T V 85D T VR 5 G TVR5J U 1BC44 U 1BZ41 U1CL49 U 1 DL44A U1DL49 U1DZ41 U1GC44 U1GU44 U1GZ41 U1JC44 U1JU44 U1JZ41 U 0 3 R-12 UG3R-16 U03R-2 % n s V rrmi Vr iFM V (V) (V) (A) * £ *2 m z MZ m z MZ m z m z m z m z m z 750 1000 150 U 0 3 R-20

U1DL49

Abstract: B05G U15B U15C U1BC44 U1CL49 U1DL44A U1DZ41 U1GC44 U1GU44
Contextual Info: - 88- fi B T V R4N TVR5B T V 85D T VR 5 G TVR5J U 1BC44 U 1BZ41 U1CL49 U 1 DL44A U1DL49 U1DZ41 U1GC44 U1GU44 U1GZ41 U1JC44 U1JU44 U1JZ41 U 0 3 R-12 UG3R-16 U03R-2 U 0 3 R-20 U03R-4 U03R-8 UOSB U05C UOSE U05G U 0 5 GH44 1305 J U 0 5 JH44 UQSNH44 U 0 5 NU44

smd 1gw

Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
Contextual Info: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N

B05G

Abstract: U15B U15C U1BC44 U1CL49 U1DL44A U1DL49 U1DZ41 U1GC44 U1GU44
Contextual Info: - 88 - fi B TVR4N TVR5B TV85D TVR5G TVR5J % n s Vrsm V rrmi V (V) * £ * 2 m z M Z £ Vr iFM (V) (A) 1 # lo ,If # (°C> (A) 1000 100 200 400 600 1. 0. 0. 0. CI. 2 5 5 5 5 CC) 45a 45a 4 5a 45a IFSM T (A) r o 10 0 20 20 20 20 U1BC44 U1BZ41 U1CL49 U1DL44A

1ZB36

Abstract: 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ
Contextual Info: 1 PART NUMBER INDEX P art No. 05B4B48 05G4B48 05GU4B48 05J4B48 05NH45 05NH46 05NU41 05NU42 0R8GU41 100G6P43 100L6P43 100Q6P43 100U6P43 10B4B41 10DL2C41A 10DL2C48A 10DL2CZ47A 10FL2C48A 10FL2CZ47A 10G4B41 10GL2CZ47A 10GWJ2C48C 10GWJ2CZ47C 10J4B41 10JL2CZ47 10JWJ2CZ47

zener diode 1NU 9F

Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Contextual Info: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:

1gw transistor

Abstract: TSA1000 1J4B41 1G4B41 1B4B41 magnetron power control scr driver ic for rectifier 3 phase scr drive circuit diagram 4G4B41 1B4B42
Contextual Info: mAPPLICATION CIRCUIT 1. Igniter . 448 2. Strobe . 449

1ZB36

Abstract: 0R1QYZ41 4D4B44 6b4b41 4D4B41 s5502n 0R1NYZ41 30jh11 10L6P44 30L6P43A
Contextual Info: [ 10 ] 保守廃止品種一覧表 [ 10 ] 保守廃止品種一覧表 次の品種が保守品種および廃止品種となっております。新規採用は代替推奨品種にてご検討くださいま すようお願いいたします。 2003-3-1 現在

DO-41S

Abstract: DO-15L 1Z220 U1DL49 CRH01 1FWJ43N CMZ24 U05NH 2z16 CRS01
Contextual Info: [ 4 ] 推奨品種一覧表 [ 4 ] 推奨品種一覧表 <新規設計時の推奨品 新規設計時の推奨品> 新規設計時の推奨品 一般整流ダイオード ピーク繰り返し逆電圧 パッケージ 100 V 0.7 A 平均順電流 1A 400 V 600 V

U1DZ41

Abstract: U15C TVR4N U15B U1BC44 U1CL49 U1DL44A U1DL49 U1GC44 U1GU44
Contextual Info: - 88- fi B T V R4N TVR5B T V 85D T VR 5 G TVR5J % n s £ Vr s m V rrmi Vr iFM V (V) (V) (A) * £ *2 m z M Z 1 # lo,I f # (°C> (A) 1000 100 200 400 600 1. 2 0. 5 0. 5 0. 5 CI. 5 CC) 45a 4 5a 4 5a 45a IFSM T (A) r o 100 20 20 20 20 U 1BC44 U 1BZ41 U1CL49

BTA136

Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
Contextual Info: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

IN5363B

Abstract: IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A
Contextual Info: Cross Reference Every care has b een taken in compiling this cross referen­ ce list which is published in good faith to assist engineers, Readers are rem inded that this list is intended for guidance only FAGOR ELECTRÓNICA can not be held responsible for any