MUR1560 equivalent
Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in
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MBRD835L
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MUR1560 equivalent
1N4004 SMA
S1A SOD 88
S1A MARKING CODE SOD 88
1N5189
ss33 sma
Diode marking us1j
diode 6a10
6TQ035
usd745c equivalent
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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MBRM120ET3
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
Diode 1N4007 DO-7 Rectifier Diode
FE8D
marking BCV
BA157* diode
MUR160 SMa
diode rgp10g
MBRD360
cathode top 1n5619
1N2069
mur120 equivalent diode
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CTX12SL
Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4
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10BF10
10BF100
10BF20
10BF40
10BF60
10BF80
10BQ015
10BQ040
10BQ060
10BQ100
CTX12SL
CTX12S
CTX-12SL
STPS1045CT
RS8KT
MBR020
BYT30P-600
RS8DT
FMS-3FU
BYT01-200
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CTX12S
Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40
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SMBYW01-200
16CPF20
BYW99W-200
10BF100
STTA112U
16CTQ100
STPS20H100CT
10BF20
16CTQ100S
CTX12S
CTX12SL
CTX-12SL
CTB34M
FMPG3F
BYV10-40 equivalent
BAT42 equivalent
STPS3045CW Equivalent
BYV42-200
CTL22S
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scr 8a 200v
Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
Text: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified
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394hex
450sq.
678hex
scr 8a 200v
do213ab
50A 1200V SCR
5A 200V SCR die
SCR 30A 100V
USD635C
1n4436
US60A
eh12a
1N1183
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uesi503
Abstract: UES1503 UES1501 UES1502 UES1504
Text: UES1501 UES1502 UES1503 UES1504 RECTIFIERS High Efficiency, 16A DESCRIPTION The U ES 15 00 Series, in the econom ical, convenient T 0 -2 20 package, is sp ecifica lly designed fo r operation in power s w itching circu its to frequ en cies in excess of 100kH z. The very low forward voltage and
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uesi503
ues1504
T0-220
UES1500
O-220
100kHz.
UES1501
UES1502
UES1501
ES1502
uesi503
UES1503
UES1502
UES1504
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1N6651
Abstract: 1N6654 BYV32E-200 Sertech Labs UES2403 1N6708 1N6709
Text: Microsemi Ultra Fast Rectifiers Part Number PPR1355 PPR1369 1N6708 1N6708R 1N6709 1N6709R UES1605CT UES1501 UES2401 UES1610CT UES1502 UES2402 UF1610 UES1615CT UES1503 UES2403 UF1615 BYV32E-200 UHVP2802 UES1504 UES2404 UF1620 UES1620CT UES1630CT UF1630 UHVP2804
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O-254
T0-220AC
O-220AC
T0-22
O-220
T0-220AB
1N6651
1N6654
BYV32E-200
Sertech Labs
UES2403
1N6708
1N6709
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ues1503
Abstract: No abstract text available
Text: UES1501 UES1502 UES1503 UES1504 RECTIFIERS High Efficiency, 16A FEATURES DESCRIPTION • Very Low Forward Voltage • Very Fast Recovery Times • Economical, Convenient T0-220 Package • Low Thermal Resistance • Mechanically Rugged The UES1500 Series, in the economical,
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UES1501
UES1502
UES1503
UES1504
T0-220
UES1500
O-220
100kHz.
ues1503
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UES1502
Abstract: T46A UES1501 UES1503 UES1504
Text: 16 Amp Ultra Fast Rectifiers UES1501 - UES1504 — C Dim. Inches Minimum — B A B C D E F G H J K L M N P Base Cathode ? •ii, .3 9 0 .0 4 5 .180 .2 4 5 .5 5 0 .139 .100 -.5 0 0 .190 .014 .0 8 0 .0 2 8 .0 4 5 Millimeter Maximum Minimum .415 .0 5 5 .190
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UES1501
UES1504
T0-220AC
UES1501
UES1502
UES1503
UES1502
T46A
UES1503
UES1504
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TL 2272 R
Abstract: to220 5 lead plastic UFN610 m7 rectifier diode
Text: UNITRODE T2 CORP 9347963 U N I T R O O E CORP mT| 92D 0010720 10720 1 D - ?*?-< POWER MOSFET TRANSISTORS Hffilîi 200 Volt, 1.5 Ohm N-Channel UFN 612 UFN613 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling
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UFN613
TL 2272 R
to220 5 lead plastic
UFN610
m7 rectifier diode
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UFN742
Abstract: N-Channel mosfet 400v to220 2314Y UFN741
Text: TS UNITRODE CORP 9347963 ë F | ‘i 3 M 7 cib3 DGlG7t.a b U N I T R O D E CORP 92D 10762 |~~ D T-" ^ ? V 3 POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling
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UFN742
UFN743
N-Channel mosfet 400v to220
2314Y
UFN741
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UFN633
Abstract: UFN630 CIT-20
Text: U N ITR O PE T S CORP 9347963 D EE UN I T R O D E CORP |^ B 4 7 ^ b 3 T o iQ 7 3 ? T T 92D Q 10732 POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel FE A T U R E S • Com pact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling
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UFN632
UFN633
UFN633
UFN630
CIT-20
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d773
Abstract: diode sy 710 sy 710 diode
Text: T2 UNITRODE CORP 9347963 Ï F | c]347i:ib3 □ OlOVL.fl 7 | ~ 92D UNITRODE CORP 10768 D r POWER MOSFET TRANSISTORS t S 500 Volt, 3.0 Ohm N-Channel UFN 822 UFN823 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling
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UFN823
d773
diode sy 710
sy 710 diode
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1G747
Abstract: No abstract text available
Text: UNITRODE CO RP 9347963 TE TS UNITRODE CORP D eT n |347ib3 DE 92D 10744 □□10744 4 D T '7 1 -1 POWER MOSFET TRANSISTORS 400 Volt, 3.6 Ohm N-Channel FEATURES • Compact Plastic Package » Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown
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347ib3
UFN712
UFN713
1G747
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UF1615
Abstract: No abstract text available
Text: Ultra Fast Recovery Rectifiers UF1610 - UF1620 —c Dim. Inches Minimum — B A B C D E F G H J K L M N P Base Cathode _L .3 9 0 .0 4 5 .180 .2 4 5 .5 5 0 .139 .100 -.5 0 0 .190 .014 .0 8 0 .0 2 8 .0 4 5 M illim eter Maximum Minimum .415 .0 5 5 .190
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UF1610
UF1620
O--220A
UES1501
UES1502
MUR1510
UES1503
MUR1515
UES1504
UF1615
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USD935-50
Abstract: No abstract text available
Text: UNITRODE CORP | 9347963 UN I TR OD E □□IGTflb b | 92D CORP 10986 RECTIFIERS D ^ES5501 SES5502 SES5503 SES5504 High Efficiency, 16A F EATU RES • Very Low Forward Voltage • Very Fast Recovery T im es • Econom ical, C onvenient T 0 -2 2 0 Package • Low T herm al Resistance
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ES5501
SES5502
SES5503
SES5504
USD935-50
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Untitled
Abstract: No abstract text available
Text: UNITRODE T5 CORP 9347963 U N IT R O D E DeT | ^347^^3 0011DL.7 4 | 92D CORP 11067 D r '^ulD620 POWER SCHOTTKY RECTIFIERS USD635 USD640 USD645 12A Pk, up to 45V DESC R IPT IO N The U S D 6 0 0 series of S chottky power rectifiers Is ideally suited for output
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0011DL
ulD620
USD635
USD640
USD645
SD635
SD620
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USD945
Abstract: TO-220 3 lead bend
Text: UNITRO DE CORP 9347963 ~ " ~ “iS • D E | ^3*47^3 0011D77 92D U N I T R O D E CORP POWER SCHOTTKY RECTIFIERS 32A Pk, up to 45V 11077 T - O S -t Ü 5 d 920 U SD935 U SD940 USD945 DESCRIPTION FEATURES • Very Low Forward Voltage 0.5V max @ 16A • Reverse Transient Capability
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0011D77
SD935
SD940
USD945
USD900
USD945
TO-220 3 lead bend
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UES1422
Abstract: UES1420 UES1421 UES1423
Text: 12 UNITRODE CORP 9347963 DE I ,ì347clb3 0D11031 UN I TRODE CORP 92D RECTIFIERS D U E S 1 4 2 0 -U E S 1 4 2 3 T -0 3 -/-7 High Efficiency, 8A FEATURES ° Low dynamic forward voltage • Very fast recovery times • Economical, convenient plastic package • Low thermal resistance
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0D11031
UES1420
O-220,
100kHz.
UES1422
UES1421
UES1423
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ufn730
Abstract: UFN731
Text: UNITRODE CORP 9347963 M | cî347cib3 DDlG7Sb UNITRODE CORP 92D 10756 POWER MOSFET TRANSISTORS UFN730 UFN731 UFN732 UFN733 400 Volt, 1.0 Ohm N-Channel FEATU R ES D E S C R IP T IO N • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN730
UFN731
UFN732
UFN733
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fn720
Abstract: No abstract text available
Text: UNITRODE CORP »£§^347^^3 9347963 U N IT R OD E C ORP 92D 10750 0D1Q7S0 r v POWER MOSFET TRANSISTORS UFN720 UFN721 UFN722 UFN723 400 Volt, 1.8 Ohm N-Channel F EATU RES • C om pact Plastic Package • Fast S w itching • Low Drive Current • Ease of Paralleling
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UFN720
UFN721
UFN722
UFN723
fn720
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Cross Reference power MOSFET
Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258
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T0-204AA
T0-204AE
T0-220AB
T0-220AC
Cross Reference power MOSFET
irf 3502 mosfet
SD500KD
irf3203
mosfet irf equivalent book
sem 2106 inverter diagram
IFR822
Diode BYW 56
BUZ41 equivalent
transistor f630
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