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    UGF16085 Search Results

    UGF16085 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UGF16085 Cree 85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: UGF16085 85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed specially for satellite communication applications in frequency range from 1626 to 1661 MHz. Rated with a minimum output power of 85W. This device is ideal for 16QAM, TDMA,


    Original     		PDF UGF16085 661GHz, 16QAM, UGF16085

    1661m

    Abstract: transistor 1661 equivalent Cree Microwave TANT-E UGF16085 85-W 85w sot23
    Text: UGF16085 85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed specially for satellite communication applications in frequency range from 1626 to 1661 MHz. Rated with a minimum output power of 85W. This device is ideal for 16QAM, TDMA,


    Original     		PDF UGF16085 661GHz, 16QAM, 85Whorized UGF16085 1661m transistor 1661 equivalent Cree Microwave TANT-E 85-W 85w sot23

    semiconductors cross reference

    Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
    Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30


    Original     		PDF BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b