UNR111H Search Results

UNR111H Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UNR111H		Panasonic	Silicon PNP epitaxial planer transistor with biult-in resistor		Original	PDF
UNR111H		Panasonic	Silicon PNP Epitaxial Planar Transistor		Original	PDF

UNR111H Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UN111H Abstract: UNR111H XP0111H XP111H Text: Composite Transistors XP0111H XP111H Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR111H(UN111H) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element	Original	XP0111H XP111H) UNR111H UN111H) UN111H XP0111H XP111H	PDF
UN111H Abstract: UNR111H XN0111H XN111H Text: Composite Transistors XN0111H XN111H Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR111H(UN111H) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element	Original	XN0111H XN111H) UNR111H UN111H) UN111H XN0111H XN111H	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
Untitled Abstract: No abstract text available Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts	Original	UNR111x UN111x UNR1110 UNR1111 UNR1112	PDF
Untitled Abstract: No abstract text available Text: Composite Transistors XP0611FH XP611FH Silicon PNP epitaxial planer transistor 0.2±0.05 4 1.25±0.10 2.1±0.1 Features Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.	Original	XP0611FH XP611FH)	PDF
UNR1110 Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ	Original	UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119	PDF
UN111H Abstract: UNR111H XN0111H XN111H Text: Composite Transistors XN0111H XN111H Silicon PNP epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.	Original	XN0111H XN111H) UNR111H UN111H) UN111H XN0111H XN111H	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928	PDF
Untitled Abstract: No abstract text available Text: Composite Transistors XP0611FH XP611FH Silicon PNP epitaxial planer transistor 0.2±0.05 4 1 2 5° 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo	Original	XP0611FH XP611FH) UNR111F UN111F) UNR111H UN111H)	PDF
common collector PNP Abstract: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ	Original	UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) common collector PNP UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118	PDF
UN111F Abstract: UN111H UNR111F UNR111H XN0611FH XN611FH Text: Composite Transistors XN0611FH XN611FH Silicon PNP epitaxial planer transistor 3 2 5° 0.4±0.2 2.8+0.2 –0.3 6 1 (0.65) ● Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.	Original	XN0611FH XN611FH) UNR111F UN111F) UNR111H UN111H) UN111F UN111H XN0611FH XN611FH	PDF
1117 S Transistor Abstract: 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits	Original	111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115	PDF
UN111H Abstract: UNR111H XP0111H XP111H Text: Composite Transistors XP0111H XP111H Silicon PNP epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.	Original	XP0111H XP111H) UNR111H UN111H) 50nductor UN111H XP0111H XP111H	PDF
UNR1111 Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112 Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits	Original	111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112	PDF

1117 S Transistor Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and	Original	111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119	PDF
UN111F Abstract: UN111H UNR111F UNR111H XN0611FH XN611FH Text: Composite Transistors XN0611FH XN611FH Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100	Original	XN0611FH XN611FH) UN111F UN111H UNR111F UNR111H XN0611FH XN611FH	PDF