UNR2216 Search Results

K 460

Abstract: UN2116 UN2216 UNR2116 UNR2216 XN04316 XN4316
Contextual Info: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2216 (UN2216) + UNR2116 (UN2116)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04216 Silicon NPN epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR2216 x 2 Parameter

UNR2216

Abstract: XP04216
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04216 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR2216 x 2 Parameter

UNR2216

Abstract: XP04216
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04216 Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • UNR2216 x 2 • Code SMini6-G1 • Pin Name 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04316G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UN2216

Abstract: UNR2216 XN04216 XN4216
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04216 (XN4216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04316 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 M Di ain sc te on na tin nc ue e/ d • Features 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des

UN2216

Abstract: UNR2216 XP04216 XP4216
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04216 (XP4216) Silicon NPN epitaxial planar type 0.2±0.05 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04316 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Features 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01216 (XN1216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 0.4±0.2 • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)

UNR2216

Abstract: XP06216
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06216 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor)

UN2216

Abstract: UNR2216 XN02216 XN2216
Contextual Info: Composite Transistors XN02216 XN2216 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 2 1 (0.65) 0.30+0.10 –0.05 1.1+0.2 –0.1 Parameter Collector-base voltage (Emitter open)

UNR2116

Abstract: UNR2216 XN04316G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04316G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For switching/digital circuits • Features ue

UN2216

Abstract: UNR2216 XP06216 XP6216
Contextual Info: Composite Transistors XP06216 XP6216 Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

UNR2216

Abstract: XN06216G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216G Silicon NPN epitaxial planar type For switching/digital circuits • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo

UNR2216

Abstract: XN04216G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04216G Silicon NPN epitaxial planar type For switching circuits/digital circuits • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo

XP01216

Abstract: UNR2216
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01216 Silicon NPN epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)

UNR2210

Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

UNR2210

Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and