Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary Power MOSFET 11 Amps, 100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover,
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UT12N10
UT12N10
UT12N10L-TN3-R
UT12N10G-TN3-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary Power MOSFET 12 Amps, 100 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION SOT-223 The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover,
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UT12N10
OT-223
UT12N10
O-252
UT12N10G-AA3-T
UT12N10L-TM3-T
UT12N10G-TM3-T
UT12N10at
QW-R502-508
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary Power MOSFET 12 Amps, 100 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION SOT-223 The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover,
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Original
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PDF
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UT12N10
OT-223
UT12N10
O-252
UT12N10L-AA3-T
UT12N10G-AA3-T
UT12N10L-TM3-T
UT12N10G-TM3-at
QW-R502-508
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary Power MOSFET 12 Amps, 100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover,
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UT12N10
UT12N10
UT12N10L-TN3-R
UT12N10G-TN3-R
QW-R502-508
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12N10L
Abstract: 12N10L-TA3-T 12N10
Text: UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged
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12N10
UT12N10
12N10L-TA3-T
12N10G-TA3-T
12N10L-TN3-T
12N10G-TN3-T
12N10L-TN3-R
12N10G-TN3-R
O-220
O-252
12N10L
12N10
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12n10
Abstract: Mosfet 12N10L mosfet VDS 30V ID 6A TO 252
Text: UNISONIC TECHNOLOGIES CO., LTD 12N10 Preliminary Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UT12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged
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12N10
UT12N10
O-252
12N10L-TN3-R
12N10G-TN3-R
12N10L-TN3-T
12N10G-TN3-T
O-252
QW-R502-737
12n10
Mosfet 12N10L
mosfet VDS 30V ID 6A TO 252
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Untitled
Abstract: No abstract text available
Text: UT12N10 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 12 Amps, 100 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-251 The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover,
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UT12N10
O-251
UT12N10
O-252
UT12N10L-TM3-T
UT12N1at
QW-R502-508
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