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    ROHM Semiconductor MSM51V18160F-60T3-K7

    IC DRAM 16MBIT PARALLEL 50TSOP
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    DigiKey MSM51V18160F-60T3-K7 Tray
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    Abracon Corporation ASTMLPV-18-16.000MHZ-LJ-E-T

    Frequency Control - - ASTMLPV-18-16.000MHz-LJ-E-T | Abracon ASTMLPV-18-16.000MHZ-LJ-E-T
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    RS ASTMLPV-18-16.000MHZ-LJ-E-T Bulk 1,000
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    Abracon Corporation ASTMLPV-18-16.000MHZ-EJ-E-T

    Frequency Control - - ASTMLPV-18-16.000MHz-EJ-E-T | Abracon ASTMLPV-18-16.000MHZ-EJ-E-T
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    RS ASTMLPV-18-16.000MHZ-EJ-E-T Bulk 1,000
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    Abracon Corporation ASTMLPV-18-16.000MHZ-LJ-E-T3

    Frequency Control - - ASTMLPV-18-16.000MHz-LJ-E-T3 | Abracon ASTMLPV-18-16.000MHZ-LJ-E-T3
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    RS ASTMLPV-18-16.000MHZ-LJ-E-T3 Bulk 3,000
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    Abracon Corporation ASTMLPV-18-16.000MHZ-EJ-E-T3

    Frequency Control - - ASTMLPV-18-16.000MHz-EJ-E-T3 | Abracon ASTMLPV-18-16.000MHZ-EJ-E-T3
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    RS ASTMLPV-18-16.000MHZ-EJ-E-T3 Bulk 3,000
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    V18160 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D010

    Abstract: D016 MSM51V18160 MSM51V18160A msm5116160a msm5118160a msm51v16160a
    Text: O K I Sem iconductor MSM5 1 V18160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T he M SM 51V 18160A is a 1,048,576-w ord x 16-bit D y n a m ic R A M fab ricated in O K I's C M O S silicon g a te tech n ology. T he M SM 51V 18160A ach ieve h igh in tegration, h ig h -sp e e d o p eratio n , an d low -pow er


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    MSM51V18160A 576-Word 16-Bit MSM51V18160A 42-pin 50/44-pin D010 D016 MSM51V18160 msm5116160a msm5118160a msm51v16160a PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor V18160B/BSL 1,048,576-Word x 16-Bit DYNAMIC RAM ; FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V18160B/BSL is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki'ssilicon-gate CMOS technology. V18160B/BSLachieves high integration, high-speed operation,and


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    MSM51V18160B/BSL 576-Word 16-Bit TheMSM51 V18160B/BSL TheMSM51V18160B/BSLachieves MSM51V18160B/BSL 42-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSI* M 5 M 4 V 1 8 1 6 0 B T P - 6 ,- 7 ,- 6 S , - 7 S FAST PAGE MODE 16777216-BIT 1D48576-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This Is a family of 1048576-w ord by 16-bit dynamic RAM S, fabricated with the high performance CMOS process.and is Ideal for


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    16777216-BIT 1D48576-WORD 16-BIT 1048576-w 16-bit 1048576-WORD M5M4V18160BTP-6 PDF

    MSM51V18160DSL

    Abstract: No abstract text available
    Text: E2G0131-17-61 O K I Semiconductor MSM5 1V I8 1 6 0 P/PSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESC R IPTIO N The M SM V18160D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon­ gate CMOS technology. The V18160D / DSL achieves high integration, high-speed operation,


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    E2G0131-17-61 MSM51VI8160P/PSL 576-Word 16-Bit MSM51V18160D/DSL heMSM51V18160D/DSLachieveshighintegration 42-pin MSM51V18160DSL PDF

    Untitled

    Abstract: No abstract text available
    Text: M E M O R Y WmmÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊ V18160 A-60/60L/-70/70L CMOS 1,048,576 x 16 BITS Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V18160A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory


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    MB81V18160 -60/60L/-70/70L MB81V18160A 16-bit F9704 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 1 M x 16 BITS FAST PAGE MODE DYNAMIC RAM M B 8 1 V 1 8 1 6 0 A -6 0 /6 0 L /-7 0 /7 0 L CMOS 1,048,576 x 16 BITS Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V18160A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory


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    MB81V18160A 16-bit MB81V18160A C42001S-2C MB81V18160 -60/60L/-70/70L 50-LEAD FPT-50P-M06) F50006S-2C-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY - - August 1996 Edition 2.0 FUJITSU PRODUCT PROFILE SHEET M B 8 1 V 1 8 1 60A-60/70/60L/70L CMOS 1M X 16BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 16BIT Fast Page Mode Dynamic RAM T h e F ujitsu M B 8 1 V 1 8 1 6 0 A is a fu lly d e c o d e d C M O S D y n a m ic RAM D R A M tha t co n ta in s


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    0A-60/70/60L/70L 16BIT DS05-10169-2E S-20354-9/96 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY 1 M x 16 BIT EMODEDYNAMICRA V18160B-50/-60/-50L/-60L CMOS 1,048,576 x 16 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu V18160B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The V18160B features a “fast page” mode of operation whereby high­


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    MB81V18160B-50/-60/-50L/-60L MB81V18160B 16-bit F9712 PDF

    3JDQ10

    Abstract: mitsubishi A
    Text: bl E D bSM'iflSS QD17fi3b 5 m •MITI MITSUBISHI LSIs ‘ I t ' V181600AJ,TP,RT-6,-7,-8 FAST PAGE MODE 16777216-BIT 1048576-WORD BY 16-BIT DYNAMIC RAM MITSUBISHI (MEMORY/ASIC) PIN CONFIGURATION (TO P VIEW ) DESCRIPTION This is a fam ily o f 1048576-word by 16-bit dynam ic


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    QD17fi3b M5M4V181600AJ 16777216-BIT 1048576-WORD 16-BIT 16-bit b24Tfl2S 3JDQ10 mitsubishi A PDF

    Untitled

    Abstract: No abstract text available
    Text: NN51V16160A/ V18160A series Fast Page Mode CMOS 1M x 16bit Dynamic RAM M x w D N /a x Preliminary Specification d e s c rip tio n The NN51V16160A/18160A series is a high performance CMOS Dynamic Random Access Memory orga­ nized as 1,048,576 words by 16 bits. The NN51V16160A/18160A series is fabricated with advanced CMOS


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    NN51V16160A/ NN51V18160A 16bit NN51V16160A/18160A 128ms NN51V18 60AXX PDF