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    STMicroelectronics VND1NV0413TR

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    VND1NV0413TR Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VND1NV0413TR STMicroelectronics Omnifet II: fully autoprotected Power MOSFET Original PDF
    VND1NV0413TR STMicroelectronics OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET Original PDF

    VND1NV0413TR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    VND1NV04TR-E

    Abstract: Power MOSFET SOT-223 VND1NV04-E min33 OMNIFET
    Text: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 • Linear current limitation


    Original     		VND1NV04 VNN1NV04 VNS1NV04 O-252 OT-223 VND1NV04, VNN1NV04, VNS1NV04 VND1NV04TR-E Power MOSFET SOT-223 VND1NV04-E min33 OMNIFET PDF

    Untitled

    Abstract: No abstract text available
    Text: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 2 3 •


    Original     		VND1NV04 VNN1NV04 VNS1NV04 O-252 VND1NV04, VNN1NV04, VNS1NV04 PDF

    Untitled

    Abstract: No abstract text available
    Text: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 2 3 •


    Original     		VND1NV04 VNN1NV04 VNS1NV04 O-252 VND1NV04, VNN1NV04, VNS1NV04 PDF