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    2N6660 JANTX

    Abstract: No abstract text available
    Text: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS


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    2N6660JAN/JANTX/JANTXV 2N6659/2N6660, VQ1004J/P VNDQ06 P-37515--Rev. 04-Jul-94 2N6660 JANTX PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS


    Original
    2N6660JAN/JANTX/JANTXV 2N6659/2N6660, VQ1004J/P VNDQ06 P-37515--Rev. 04-Jul-94 PDF

    VN0606L

    Abstract: VN66AFD TN0601L
    Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46


    Original
    TN0601L, VN0606L, VN66AFD VN0606L TN0601L O-226AA 08-Apr-05 VN0606L VN66AFD TN0601L PDF

    VN66AFD

    Abstract: TN0601L VN0606L VN0606M
    Text: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2


    Original
    TN0601L, VN0606L/M, VN66AFD VN0606L TN0601L VN0606M O-226AA, O-237) S-52426--Rev. VN66AFD TN0601L VN0606L VN0606M PDF

    vn66afd

    Abstract: 0606L TN0601L VN0606L
    Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46


    Original
    TN0601L, VN0606L, VN66AFD VN0606L TN0601L O-226AA 18-Jul-08 vn66afd 0606L TN0601L VN0606L PDF

    VN66AFD

    Abstract: VN66AF TN0601L VN0606L 0606l 7020.1
    Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46


    Original
    TN0601L, VN0606L, VN66AFD VN0606L TN0601L O-226AA O-226AA) S-04279--Rev. 16-Jul-01 VN66AFD VN66AF TN0601L VN0606L 0606l 7020.1 PDF

    transistor VN46AFD

    Abstract: VN46AFD TO220SD
    Text: VN46AFD N-Channef Enhancement-Mode M O S Transistor B W SgA PRODUCT SUMMARY V BR|DSS 'i r 40 3 Id (A FRONT VIEW TO-220SD o 1.46 Performance Curves: VNDQ06 1 SOURCE 2 GATE 3 & TAB - DRAIN 123 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) SYM BOL


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    VN46AFD O-220SD VNDQ06 transistor VN46AFD TO220SD PDF

    Untitled

    Abstract: No abstract text available
    Text: Hmzzàz TN0601L N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY TO-92 TO-226AA 'V V (BR)DSS 60 1.8 BOTTOM VIEW •d (A) 0.47 1 SOURCE 2 GATE Performance Curves: VNDQ06 3 DRAIN 3 il— L-n • - É ? i ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


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    TN0601L O-226AA) VNDQ06 PDF

    Untitled

    Abstract: No abstract text available
    Text: H tSffA VN66AFD N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V BR|DSS o *D rX ’ (A 3 1.46 60 FRONT VIEW TO-220SD 1 SOURCE 2 GATE 3 & T A B -D R A IN Performance Curves: VNDQ06 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


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    VN66AFD O-220SD VNDQ06 PDF

    transistor VN46AFD

    Abstract: VN46AFD
    Text: VN46AFD c r S ilic c x ìix JUm in c o rp o ra te d N-Channel E nhancem ent-M ode MOS Transistor TO-220SD TOP VIEW o PRODUCT SUMMARY V BR DSS (V) ••DS(ON) (n ) (A) PACKAGE 40 3 1.46 TO-22QSD 1 2 3 1 SOURCE 2 GATE 3 & TAB - DRAIN Performance Curves: VNDQ06 (See Section 7)


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    VN46AFD O-220SD O-22QSD VNDQ06 VN46AFD transistor VN46AFD PDF

    tq1004j

    Abstract: No abstract text available
    Text: TQ1004J N-Channel Enhancement-Mode MOS Transistor Arrays_ V BRJDSS T 2 60 TOP VIEW 14-PIN PLASTIC PRODUCT SUMMARY Dual-ln-Llne Package <lß •d (A 0.45 Performance Curves: VNDQ06 i— i - D ,[T h | D4 S i (T 13] s 4 12] g 4 Q ,[T ÏÏ] N/C


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    TQ1004J 14-PIN VNDQ06 10noec PDF

    Untitled

    Abstract: No abstract text available
    Text: jre g s b 2N6660 N-Channel Enhancement-Mode MOS Transistor TO-39 TO-2Q5AD B O T T O M VIEW PRODUCT SUMMARY V (BR)DSS •d rDS(ON) (Û) (A) 3 1.1 60 2 GATE 3 & C A S E-D R A IN Performance Curves: VNDQ06 J ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


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    2N6660 VNDQ06 PDF

    VN46AFD

    Abstract: 6178 vn0606m
    Text: VNDQ06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-39 TO-205AD 2N6659, 2N6660 Single TO-220SD VN46AFD, AN66AFD Single TO-237 VN0606M Single TO-92 (TO-226AA)TN0601L Quad 14-Pin Plastic • VQ1004J, TQ1004J Quad 14-Pin Dual-ln-Line


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    VNDQ06 O-205AD) O-220SD O-237 O-226AA) 14-Pin 2N6659, 2N6660 VN46AFD, VN46AFD 6178 vn0606m PDF

    2N6659

    Abstract: No abstract text available
    Text: 2N6659 N-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d V BR DSS "S "1 (V) 35 1 .8 BO TTO M VIEW TO -39 (TO-2Q5AD) PRODUCT SUMMARY •d (A) 0 .1 8 2 GATE 3 & CASE-DRAIN Performance Curves: VNDQ06 I»— u ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


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    2N6659 VNDQ06 PDF

    VN66AFD

    Abstract: vn66a
    Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS<on) Max (&) VGS(th) (V) I d (A) 1.8 e v Gs = io v 0.5 to 2 0.47 0.8 to 2 0.33 0.8 to 2.5 1.46 TN0601L VN0606L 3e 60 VN66AFD v as = io v


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    TN0601L, VN0606L, VN66AFD TN0601L VN0606L VN66AFD S-04279-- 16-Jul-01 vn66a PDF

    2N6660

    Abstract: s0437 2N6660 siliconix VQ1004J
    Text: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5


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    2N6660, VQ1004J/P 2N6660 VQ1004J/P S-04379-- 16-Jul-01 s0437 2N6660 siliconix VQ1004J PDF

    vn0606m

    Abstract: b0808
    Text: T e m ic siiiconix TN0601L, VN0606L/M, VN66AFI N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number TN0601L VN0606L VN0606M VN66AFD r DS on) 3@ VGS = 10 V 3@ VGS = 10 V 3@ VGS = 10 V 60 Features • • • • • Max (Q) 1.8 @ VGs = 10 V


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    TN0601L VN0606L VN0606M VN66AFD TN0601L, VN0606L/M, VN66AFI) O-226AA O-237 P-37992--Rev. b0808 PDF

    gs 1117 ax

    Abstract: VN66 TN0610L VN0606M
    Text: Tem ic snlconlx_ TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (Q) V c S (th ) (V ) I d (A) TN0601L 1.8 @ V os = 10 V 0.5 to 2 0.47 VN0606L 3 @ V gs = 10 V 0.8 to 2 0.33


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    TN0601L, VN0606L/M, VN66AFD TN0601L VN0606L VN0606M VN66AFD O-237 P-37992--Rev. gs 1117 ax VN66 TN0610L PDF

    VN66AFD

    Abstract: vn66 TO-220SD VN66AD vn66a VN66AF 100-C 7060V VN664
    Text: S IL IC O N IX INC • lflE D incorporated H Siliconix flSSM73S DDlMObb 7 ■ VN66 SERIES N-Channel Enhancement-Mode MOS Transistors "P3°l-07 PRODUCT SUMMARY PART NUMBER V BR DSS TDS(ON) (il) (V) TO-22Q/TO-220SD >d (A) PACKAGE VN66AD 60 3 1.7 TO-220 VN66AFD


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    VN66AD O-220 VN66AFD O-220SD VNDQ06 O-220/TO-220SD T0-220SD vn66 TO-220SD vn66a VN66AF 100-C 7060V VN664 PDF

    VNDQ09

    Abstract: VQ1006 VQ1004
    Text: JH SS& VQ1004 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY TOP VIEW PART NUMBER V BR DSS (V) VQ1004 60 VQ1006 90 T •d (A) PACKAGE 3.5 0.46 All 3.5 0.40 All Dual-ln-Une Package D1 [ 7 m] D4


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    VQ1004 VQ1006 14-PIN VQ1006 VNDQ06 VNDQ09 VNDQ09 PDF

    52426

    Abstract: No abstract text available
    Text: MIC TN0601L, VN0606L/M, VN66AFD Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number ' BR DSS Min (V) rus(on) Max (Q) VGS(th) (V) I d (A) TN0601L 1.8 @ VGS= 10 V 0.5 to 2 0.47 VN0606L 3 @ VGs - 10 V 0.8 to 2 0.33 VN0606M


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    TN0601L, VN0606L/M, VN66AFD TN0601L VN0606L VN0606M VN66AFD O-237 O-226AA, O-237) 52426 PDF

    JANTX2N6660

    Abstract: JANTXV2N6660
    Text: 2N6660JAN/JANTX/JANTXV_ VISHAY Vishay Siliconix JAN Qualified N-Channel 60-V D-S MOSFETs PRODUCT SUM MARY V (BR)DSS M i n ( V ) r DS(on) M a x ( Q ) v G S(th) ( V ) I d (A ) 60 3 e v G S= 10 V 0.8 to 2 0.99 FEATURES BENEFITS APPLICATIO NS


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    2N6660JAN/JANTX/JANTXV_ 2N6659/2N6660, VQ1004J/P VNDQ06 S-04279-- 16-Jul-01 JANTX2N6660 JANTXV2N6660 PDF

    VN46AFD

    Abstract: VNDQ1 vnd02 TD1001 VN46AF
    Text: m95SË VNDQ SERIES DIE N-Channel Enhancement-Mode MOS Transistors PART NUM BER V BR DSS (V) r DS(ON) VNDQ1CHP 30 1.2 VNDQ2CHP 60 1.8 (A) • • • • • TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P (VNDQ03 x 4) TD1001Y (VNDQ03 x 2) TQ1001J (VNDQ03 x 4)


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    TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P VNDQ03 TD1001Y TQ1001J VN46AFD VNDQ1 vnd02 TD1001 VN46AF PDF

    4170A

    Abstract: No abstract text available
    Text: 'SSSSS TD1004Y Dual N-Channel Enhancement-Mode MOSFETs SO-8 PACKAGE PRODUCT SUMMARY V BRJDSS siq : Gicr S2Q: csanz •d (A 60 2 0.65 FEATURES APPLICATIONS • Electrically Isolated MOSFETs • MOSFET Drivers 1 8 2 7 3 6 XI 01 ~n D1 HU D2 4 5 ~ n D2 Top View


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    TD1004Y VNDQ06 4170A PDF