VN3515L
Abstract: VN4012L
Text: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS
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VN3515L/VN4012L
VN3515L
VN4012L
18-Jul-08
VN3515L
VN4012L
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VN3515L
Abstract: VN4012L
Text: VN3515L/VN4012L Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
VN3515L
VN4012L
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4012L
Abstract: VN3515L VN4012L
Text: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS
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VN3515L/VN4012L
VN3515L
VN4012L
08-Apr-05
4012L
VN3515L
VN4012L
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4012l
Abstract: marking code diode 04 to-18 siliconix VN3515L VN4012L
Text: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS
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VN3515L/VN4012L
VN3515L
VN4012L
Nov-00
4012l
marking code diode 04 to-18 siliconix
VN3515L
VN4012L
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VN3515L
Abstract: VN4012L AUG94
Text: VN3515L/VN4012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
15-Aug-94
VN3515L
VN4012L
AUG94
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VN3515L
Abstract: VN4012L
Text: VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
15-Aug-94
VN3515L
VN4012L
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VN3515L
Abstract: VN4012L
Text: VN3515L/VN4012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
15-Aug-94
VN3515L
VN4012L
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tn3512l
Abstract: TN4012L
Text: TN3512L, TN4012L N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY TO-92 TO-226AA V (BR)DSS PART NUMBER BOTTOM VIEW >D 'W (A) TN3512L 350 12 0.16 TN4012L 400 12 0.16 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDV40 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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TN3512L,
TN4012L
O-226AA)
TN3512L
VNDV40
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Untitled
Abstract: No abstract text available
Text: VN4012L, VN3515L N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA PRODUCT SUMMARY PART NUMBER V (BR|DSS VN4012L 400 12 0.16 VN3515L 350 15 0.15 Performance Curves: JFES5& BOTTOM VIEW •d "P (A) VNDV40 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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VN4012L,
VN3515L
VN4012L
VN3515L
O-226AA)
VNDV40
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40128
Abstract: No abstract text available
Text: SILICONIX INC IflE D • ÖS54735 0014110 b VN4012 SERIES JLfTZ'Siliccsnix M in c o r p o r a te d N-Channel E n h a n ce m e n t-M o d e MOS T ra n sisto rs T -'27-23 PRODUCT SUMMARY TO-92 PART NUMBER V BR DSS rDS(ON) ( il) (V) Id (A) PACKAGE VN4012L 400
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S54735
VN4012
VN4012L
VN4012B
O-205AF
VN3515L
VNDV40
250X1
40128
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4012L
Abstract: No abstract text available
Text: VN3515L/VN4012L_ VISHAY T Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M î n ( V ) r D S (o n) M a x ( Q ) V G S (th> ( V ) V N3515L 350 15 9 V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L
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VN3515L/VN4012L_
N3515L
VN4012L
S-04379--
16-Jul-01
VN3515L7VN4012L
4012L
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TN3512L
Abstract: No abstract text available
Text: VNDV1 DIE N-Channel Enhancement-Mode MOS Transistor J 3 T in co rp o ra ted VNDV1CHP* Gate Pad 0.005 0.127 0.007 (0.178) TN3512L TN4012L VN3515L VN4012L ‘ Meets or exceeds specification for all part numbers listed below Source Pad For additional design information please consult the
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TN3512L
TN4012L
VN3515L
VN4012L
VNDV40.
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Untitled
Abstract: No abstract text available
Text: Tem ic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Num ber V BR DSS VN3515L VN4012L r DS(on) M ax (£2) (V ) 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 400 12 @ V GS = 4.5 V 0.6 to 1.8 0.16 Applications
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
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Untitled
Abstract: No abstract text available
Text: Temic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Mín (V) rns^n) Max (Q) VGS(th) Id (A) (V) VN3515L 350 15 @ V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ V GS = 4.5 V 0.6 to 1.8
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--
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