marking WPs
Abstract: BCR192T SC75
Text: BCR192T PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R 1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type BCR192T Marking WPs 1=B Pin Configuration 2=E 3=C Package SC75
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BCR192T
VPS05996
EHA07183
Dec-13-2001
marking WPs
BCR192T
SC75
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BCR141T
Abstract: SC75
Text: BCR141T NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R2=22k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR141T WDs Pin Configuration 1=B 2=E Package 3=C SC75
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BCR141T
VPS05996
EHA07184
Jul-13-2001
BCR141T
SC75
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BCR148T
Abstract: SC75
Text: BCR148T NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR148T WEs Pin Configuration 1=B 2=E Package 3=C SC75
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BCR148T
VPS05996
EHA07184
Jul-13-2001
BCR148T
SC75
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BFr pnp transistor
Abstract: SC-75 BFT92T
Text: BFR 92T NPN Silicon RF Transistor Preliminary data 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92T PNP 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05996
SC-75
900MHz
Oct-13-1999
BFr pnp transistor
SC-75
BFT92T
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BCR142T
Abstract: SC75
Text: BCR142T NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR142T WZs Pin Configuration 1=B 2=E Package 3=C SC75
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BCR142T
VPS05996
EHA07184
Jul-13-2001
BCR142T
SC75
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BFR949T
Abstract: SC75 BFR94
Text: BFR949T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR949T
VPS05996
Aug-09-2001
BFR949T
SC75
BFR94
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BCR162T
Abstract: SC75
Text: BCR162T PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type Marking BCR162T WUs Pin Configuration 1=B 2=E Package 3=C SC75
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BCR162T
VPS05996
EHA07183
Jul-16-2001
BCR162T
SC75
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SC-75
Abstract: No abstract text available
Text: BFR 182T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05996
SC-75
900MHz
Dec-16-1998
SC-75
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SC-75
Abstract: No abstract text available
Text: BFR 193T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05996
SC-75
900MHz
Dec-16-1998
SC-75
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BFR181T
Abstract: SC75
Text: BFR181T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR181T
VPS05996
900MHz
Aug-09-2001
BFR181T
SC75
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78145
Abstract: BFR92T SC75 BFT92T
Text: BFR92T NPN Silicon RF Transistor Preliminary data 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT92T PNP 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR92T
BFT92T
VPS05996
900MHz
Aug-08-2001
78145
BFR92T
SC75
BFT92T
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transistor k 4213
Abstract: BFR340T transitor RF 98 SC75 BFR34* transistor
Text: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR340T
VPS05996
EHA07536
Jul-01-2003
transistor k 4213
BFR340T
transitor RF 98
SC75
BFR34* transistor
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BFR182T
Abstract: SC75
Text: BFR182T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR182T
VPS05996
900MHz
Aug-09-2001
BFR182T
SC75
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Untitled
Abstract: No abstract text available
Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation 2 Ideal for low phase noise oscillators up to 3.5 GHz 1 Low noise figure: 1.1 dB at 1.8 GHz VPS05996
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BFR380T
VPS05996
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Untitled
Abstract: No abstract text available
Text: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFR949T
VPS05996
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E 94733
Abstract: BFT92T
Text: BFR92T NPN Silicon RF Transistor Preliminary data 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT92T PNP 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR92T
BFT92T
VPS05996
E 94733
BFT92T
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Untitled
Abstract: No abstract text available
Text: BFR183T NPN Silicon RF Transistor Preliminary data 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR183T
VPS05996
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Untitled
Abstract: No abstract text available
Text: BFR193T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR193T
VPS05996
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SC-75
Abstract: No abstract text available
Text: BCR 148T NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47kΩ, R 2=47kΩ 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR 148T WEs Pin Configuration 1=B 2=E Package
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VPS05996
EHA07184
SC-75
Sep-29-1999
SC-75
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TRANSISTOR MARKING NK
Abstract: No abstract text available
Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation 2 Ideal for low phase noise oscillators up to 3.5 GHz 1 Low noise figure: 1.1 dB at 1.8 GHz VPS05996
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BFR380T
VPS05996
EHA07524
Feb-18-2003
TRANSISTOR MARKING NK
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transistor 1107
Abstract: No abstract text available
Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation 2 Ideal for low phase noise oscillators up to 3.5 GHz 1 Low noise figure: 1.1 dB at 1.8 GHz VPS05996
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BFR380T
VPS05996
EHA07524
Jan-29-2002
transistor 1107
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BCR162T
Abstract: SC75
Text: BCR162T PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type Marking BCR162T WUs Pin Configuration 1=B 2=E Package 3=C SC75
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BCR162T
VPS05996
EHA07183
Nov-29-2001
BCR162T
SC75
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BCR141T
Abstract: SC75
Text: BCR141T NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R2=22k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR141T WDs Pin Configuration 1=B 2=E Package 3=C SC75
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BCR141T
VPS05996
EHA07184
Nov-29-2001
BCR141T
SC75
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BCR142T
Abstract: SC75
Text: BCR142T NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR142T WZs Pin Configuration 1=B 2=E Package 3=C SC75
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BCR142T
VPS05996
EHA07184
Nov-29-2001
BCR142T
SC75
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