Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    VQ2001J Search Results

    VQ2001J Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VQ2001J Vishay P-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VQ2001J Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    VQ2001J Unknown FET Data Book Scan PDF
    VQ2001J Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VQ2001J Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VQ2001J Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VQ2001J Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VQ2001J Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VQ2001J Vishay Telefunken P-Channel Enhancement-Mode MOSFET Transistors Scan PDF

    VQ2001J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VP0300M

    Abstract: VP0300M equivalent TA 7061 TO-205AD VP0300B VP0300L VQ2001J VQ2001P
    Text: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M


    Original     		PDF VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P O-226AA, VP0300L P-38283--Rev. VP0300M VP0300M equivalent TA 7061 TO-205AD VP0300B VQ2001J VQ2001P

    VQ2001P

    Abstract: No abstract text available
    Text: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (W) VGS(th) (V) ID (A) VP0300L V(BR)DSS Min (V) 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5


    Original     		PDF VP0300L/LS, VQ2001J/P VP0300L VP0300LS VQ2001J VQ2001P O-226AA, VP0300L S-00591--Rev. 04-Apr-00 VQ2001P

    VP0300B

    Abstract: VQ2001P VP0300L VP0300LS VQ2001J
    Text: VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5


    Original     		PDF VP0300B/L/LS, VQ2001J/P VP0300B VP0300L VQ2001J VQ2001P VP0300LS O-226AA, VP0300L S-58620--Rev. VP0300B VQ2001P VP0300LS VQ2001J

    VP0300M

    Abstract: VP0300L
    Text: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M


    Original     		PDF VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P O-226AA,

    s4 vishay

    Abstract: AN804 VP0300L VP0300LS VQ2001J VQ2001P 0300L
    Text: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V


    Original     		PDF VP0300L/LS, VQ2001J/P VP0300L VP0300LS VQ2001J VQ2001P 18-Jul-08 s4 vishay AN804 VP0300L VP0300LS VQ2001J VQ2001P 0300L

    75576

    Abstract: AN804 VP0300B VP0300L VP0300M VQ2001J VQ2001P
    Text: VP0300B/L/M, VQ2001J/P Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = -12 V -2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -12 V -2 to -4.5 -0.32 2.5 @ VGS = -12 V


    Original     		PDF VP0300B/L/M, VQ2001J/P VP0300B VP0300L VQ2001J VQ2001P VP0300M AN804 VP0300B O226AA, 75576 AN804 VP0300L VP0300M VQ2001J VQ2001P

    VP0300L

    Abstract: VP0300LS AN804 VQ2001J VQ2001P 0300l
    Text: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V


    Original     		PDF VP0300L/LS, VQ2001J/P VP0300L VP0300LS VQ2001J VQ2001P O-226AA, VP0300L 0300L VP0300LS AN804 VQ2001J VQ2001P 0300l

    AN804

    Abstract: VP0300L VP0300LS VQ2001J VQ2001P 1g1s
    Text: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V


    Original     		PDF VP0300L/LS, VQ2001J/P VP0300L VP0300LS VQ2001J VQ2001P 08-Apr-05 AN804 VP0300L VP0300LS VQ2001J VQ2001P 1g1s

    vp0300m

    Abstract: VP0300B VP0300L VQ2001J VQ2001P 38283
    Text: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M


    Original     		PDF VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P O-226AA, VP0300L P-38283--Rev. vp0300m VP0300B VQ2001J VQ2001P 38283

    Untitled

    Abstract: No abstract text available
    Text: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number rDS »n M a x (Q ) V GS(th) (V) I d (A) VP0300B 2.5 @ VGs = -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGs - - 1 2 V - 2 to -4.5 -0.32 2.5 @ VGs = -1 2 V -2 to -4.5


    OCR Scan     		PDF VP0300B/L/M, VQ2001J/P VP0300B VP0300L VPG300M VQ200U VQ2001P P-38283--Rev. 15-Aug-94

    VP0300M

    Abstract: VP0300B
    Text: Tem ic VP0300B/L/M, VQ2001J/P Siliconix P-Channel Enhancement-Mode MOS Transistors Product Summary Part N um ber «•DS on M ax (Q ) VoSith) (V) I d (A) VP0300B 2 .5 @ V gs = - 1 2 V - 2 to -4 .5 -1 .2 5 VP0300L 2 .5 @ V GS = - 1 2 V - 2 to -4 .5 -0 .3 2


    OCR Scan     		PDF VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P P-38283--

    VP0300M

    Abstract: 150EC VP0300L
    Text: T e m ic siiiconh_ VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number • V br dss Min (V) ; ■ Id (A) r DS(on) Max (Q) VGS(th) (V) VP0300B 2.5@ V GS= -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -1 2 V


    OCR Scan     		PDF VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P AN804, P-38283--Rev. 150EC

    0300L

    Abstract: 70217 marking code Sk transistors
    Text: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number r DS(on) M a * (Î2) v GS(th) (V) Id (A) VP0300L 2.5 V q S = - 1 2 V - 2 to -4 .5 -0 .3 2 VP0300LS 2 .5 ® V a s = -1 2 V - 2 to -4 .5 -0 .5 2 @ V gs = - 1 2 V


    OCR Scan     		PDF VP0300L/LS, VQ2001J/P VP0300L VP0300LS VQ2001J VQ2001P -226A 16-Jul-01 VP0300LVLS, 0300L 70217 marking code Sk transistors

    VP0300M

    Abstract: VP0300L VQ2001J VQ2001P VQ3001J VQ3001P VQ7254J VQ7254P IN4080 VPMH03
    Text: VPMH03 TYPICAL STATIC CHARACTERISTICS Pulse width 80ns— 30(Vs, Duty cycle 1%, Tc=25°C Part Numbers: VP0300M, VP0300L, VQ2001P, VQ2001J Segments 2 and 4: VQ3001P, VQ3001J, VQ7254P, VQ7254J Ohmic Region 1102 3 O : и. VDS = Ü. 0H 110 3 O z 10V VGS = iïTTTT


    OCR Scan     		PDF 80hs-30 VP0300M, VP0300L, VQ2001P, VQ2001J VQ3001P, VQ3001J, VQ7254P, VQ7254J VPMH03 VP0300M VP0300L VQ2001J VQ2001P VQ3001J VQ3001P VQ7254J VQ7254P IN4080 VPMH03

    Untitled

    Abstract: No abstract text available
    Text: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)


    OCR Scan     		PDF T0220 14-Pin VQ2001J VQ200IP VQ2004J T0236 TP0101T TP0202T TP06I0T VP06I0T

    vp0300m

    Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln vp0300m VP0300B VP0808L VQ2001P VQ2004P

    VP0808B

    Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 5.0 5.0 -90 -60 -30 5.0 5.0 2.0 -8 0


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P

    BSR78

    Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln BSR78 VP0300M VP0808L 041 itt diode VP0300B

    VP0808M

    Abstract: VQ2006P VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 -8 0 -3 0 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 -90 -60 -30 1.3 Powor Dissipation


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VQ2006P VP0300B VP0300M VP0808L VQ2001P

    VP0808B

    Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P

    VP100

    Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP100 VP1001P VP0300B VP0300M VP0808L

    S4 12

    Abstract: No abstract text available
    Text: VQ2001 SERIES P-Channel Enhancement-Mode _ MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR|DSS V Q 2001J -3 0 VQ 2001P 2 -3 0 2 TOP VIEW Dual-ln-Line Package Id (A PACKAGE - 0 .6 Plastic - 0 .6 S idebraze Ï7] D4


    OCR Scan     		PDF VQ2001 2001J 2001P 14-PIN S4 12

    VP0808M

    Abstract: IN400 VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln IN400 VP0300B VP0300M VP0808L VQ2001P

    VP0300M

    Abstract: k 2541 30v IN400 VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300M k 2541 30v IN400 VP0300B VP0808L