VTP8651
Abstract: K300 D725
Text: VTP Process Photodiodes VTP8651 PACKAGE DIMENSIONS inch mm CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a molded plastic, infrared transmitting package. Suitable for direct
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VTP8651
VTP8651
K300
D725
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VTP8651H
Abstract: D725
Text: VTP Process Photodiodes VTP8651H PACKAGE DIMENSIONS inch mm CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a molded plastic, infrared transmitting package. Suitable for direct
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VTP8651H
VTP8651H
D725
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Untitled
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP8651 PACKAGE DIMENSIONS inch mm CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a molded plastic, infrared transmitting package. Suitable for direct
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VTP8651
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VTP8651H
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP8651H PACKAGE DIMENSIONS inch mm CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a molded plastic, infrared transmitting package. Suitable for direct
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VTP8651H
VTP8651H
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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VTP8651
Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).
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VTP100
VTP8651
VTP1112
VTP4085
VTP1188S
VTP11188S
VTP1232
silicon photodiode array
VTP1012
VTP7840
VTP100
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K3555
Abstract: IN217 VTP8651
Text: VTP8651 VTP Process Photodiodes P A C K A G E D IM E N SIO N S inch mm .1 7 2 (4 . 3 7 ) (0 . 5 8 ) .0 9 8 .0 3 9 ( 1 .0 0 ) ' NOM. (3 . 3 0 ) .0 4 2 (1 . 0 7 ) .0 3 2 (0 . 8 1 ) (2.49) N O P T IC A L I - -1 r ! + 1 -V 1 ! T .1 6 2 (4 . 1 1 ) .1 5 2 (3 . 8 6 )
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VTP8651
in217
4x1012
K3555
VTP8651
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Untitled
Abstract: No abstract text available
Text: VTP8651 VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm ^ - N (0 .5 8 ) .1 7 2 (4 .3 7 ) .0 9 8 ,0 3 9 (3 .3 0 ) •042 (1 .0 7 ) ( 1 .0 0 ) (2 .4 9 ) " NOM. OPTICAL .0 3 2 (0 .8 1 ) I r IC A TH O D Ek -1 T" ! + L. I 1 .1 6 2 (4 .1 1 ) .1 5 2 (3 .8 6 )
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VTP8651
3D30LCH
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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K300
Abstract: VTP8651 VTP8652
Text: SbE D 30301,0=5 00010A3 V T P 8 6 5 1 , 8652 VTP Process Photodiodes E G & G I VCT 044 T-41-51 VACTEC PACKAGE DIMENSIONS inch 162 4 .6 2 , 17 2 ( 4 .3 7 > p ( 0 .5 8 ) 098 .0 4 2 ( 1 .0 7 ) .0 3 9 (1.00)' ( 2 .4 9 ) MOM. (mm) ( 5 .3 0 ) .0 3 2 ( 0 .8 1 )
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VTP8651,
T-41-51
4x1012
x1012
K300
VTP8651
VTP8652
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KT853
Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
3N24x
24xTX
KT853
KT850
KT853A
LTR-305D
H0A0872-n55
H0A1405-1
h0a2001
MOC70T3
HOA708-1
smd diode 825B
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Untitled
Abstract: No abstract text available
Text: SbE D • B O S Q b m D001Dfl3 044 H V C T V T P 8 6 5 1 , 8652 VTP Process Photodiodes E G & G VACTEC T-41-51 PACKAGE D IM EN SIO N S inch mm 1 6 2 (4 .6 2 ),_ (5 .3 0 ) (0 . 5 8 ) 172 (4 . 3 7 )r . 0 4 2 (1 . 0 7 ) .0 3 9 ( 1 .0 0 ) . 0 3 2 (0 . 8 1 )
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D001Dfl3
T-41-51
VTP8652
VTP8651
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