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    Untitled

    Abstract: No abstract text available
    Text: WTC1333 Surface Mount P-Channel Enhancement Mode MOSFET DRAIN CURRENT 3 DRAIN -550m AMPERES * “G” Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <600mΩ@V GS =-10V *Simple Gate Drive


    Original     		PDF WTC1333 -550m OT-23 OT-23 17-Jun-05

    Untitled

    Abstract: No abstract text available
    Text: WTC1333 Surface Mount P-Channel Enhancement Mode MOSFET DRAIN CURRENT 3 DRAIN -550m AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low RDS ON R DS(ON) <600mΩ@V GS =-10V *Simple Gate Drive *Small package Outline


    Original     		PDF WTC1333 -550m OT-23 OT-23 17-Jun-05