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    Untitled

    Abstract: No abstract text available
    Text: WTC2312 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE P b Lead Pb -Free 1 GATE Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V


    Original     		WTC2312 OT-23 04-Aug-09 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: WTC2312 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE P b Lead Pb -Free 1 GATE Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<31mΩ @VGS=4.5V RDS(ON)<37mΩ @VGS=2.5V RDS(ON)<47mΩ @VGS=1.8V


    Original     		WTC2312 SC-59 06-Nov-07 SC-59 26-Nov-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: WTC2312 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE P b Lead Pb -Free 1 GATE Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V


    Original     		WTC2312 OT-23 04-Aug-09 OT-23 PDF