X28C512

Abstract: A15C X28C010 X28C513 X28C512 xicor z2ce
Contextual Info: K X28C512 512K B 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Two PLCC and LCC Pinouts —X28C512 —X28C010 E2PROM Pin Compatible —X28C513 — Compatible with Lower Density E2PROMs

Contextual Info: X28C512, X28C513 Data Sheet June 7, 2006 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The

Contextual Info: _ K X28C512 512K B 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Two PLCC and LCC Pinouts —X28C512 —X28C010 E2PROM Pin Compatible —X28C513 — Compatible with Lower Density E2PROMs • Access Time: 120 ns

X28C512

Abstract: A15C X28C010 X28C513 X28C512 xicor
Contextual Info: X u X28C512 512K a r 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Tw o PLCC and LCC P inouts — X28C512 — X28C010 E2PROM Pin C om patible — X28C513 — C om patible w ith Low er D e nsity E2PROMs

1-5C78

Abstract: intersil CERAMIC, LCC-32 X28C512 intersil 15t2
Contextual Info: X28C512, X28C513 Data Sheet May 23, 2005 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The

X28C010

Abstract: X28C512 X28C512-12 X28C513 X28C512 xicor
Contextual Info: X28C512/X28C513 512K 64K x 8 Bit 5 Volt, Byte Alterable EEPROM FEATURES • Access time: 90ns • Simple byte and page write —Single 5V supply • No external high voltages or VPP control circuits —Self-timed • No erase before write • No complex programming algorithms

c 3856 data note

Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC transistor T04 X28C513-12 X28C010 X28C512 X28C513 X28C512 xicor
Contextual Info: X28C512/X28C513 X28C512/X28C513 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM • FEATURES 1 32 VCC PLCC / LCC 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 X28C512 NC 2 31 WE A15 3 30 NC A12 4 29 A14 A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25

X28C010

Abstract: X28C512 X28C513
Contextual Info: X28C512/X28C513 X28C512/X28C513 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM • FEATURES NC 1 32 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 PLCC / LCC 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 X28C512 NC 2 31 WE A15 3 30 NC

TYPE 85.32

Abstract: X28C512 intersil
Contextual Info: X28C512, X28C513 Data Sheet September 29, 2005 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile

Contextual Info: i m X 2 8 C 5 1 2 /X 2 8 C 5 1 3 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Two PLCC and LCC Pinouts — X28C512 — X28C010 E2PROM Pin Compatible — X28C513 — Compatible with Lower Density E2PROMs • Access Time: 120ns • Simple Byte and Page Write

C 3856

Contextual Info: X28C512/X28C513 512K 64K X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Two PLCC and LCC Pinouts — X28C512 — X28C010 E2PROM Pin Compatible — X28C513 — Compatible with Lower Density E2PROMs • Access Time: 90ns • Simple Byte and Page Write — Single 5V Supply

X28C010

Abstract: X28C512 X28C513 X28C512 xicor
Contextual Info: X28C512/X28C513 X28C512/X28C513 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM • FEATURES 1 32 VCC PLCC / LCC 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 X28C512 NC 2 31 WE A15 3 30 NC A12 4 29 A14 A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25

Contextual Info: im X 2 8 C 5 1 2 /X 2 8 C 5 1 3 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Two PLCC and LCC Pinouts — X28C512 — X28C010 E2PROM Pin Compatible — X28C513 — Compatible with Lower Density E2PROMs • Access Time: 90ns • Simple Byte and Page Write

semiconductor A15E

Abstract: x28c512
Contextual Info: im X28C512/X28C513 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Two PLCC and LCC Pinouts — X28C512 — X28C010 E2PROM Pin Compatible — X28C513 — Compatible with Lower Density E2PROMs * Access Time: 90ns * Simple Byte and Page Write — Single 5V Supply

X28C010

Abstract: X28C512 X28C512D X28C512DM X28C512J X28C513 X28C513EM X28C512 intersil
Contextual Info: X28C512, X28C513 Data Sheet June 7, 2006 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The

X28C010

Abstract: X28C512 X28C513 X28C512 xicor
Contextual Info: X28C512/X28C513 X28C512/X28C513 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM • FEATURES 1 32 VCC PLCC / LCC 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 X28C512 NC 2 31 WE A15 3 30 NC A12 4 29 A14 A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25

Contextual Info: f 512K a X 2 8 C 5 1 2 /X 2 8 C 5 1 3 r 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Two PLCC and LCC Pinouts — X28C512 — X28C010 E2PROM Pin Compatible —X28C513 — Compatible with Lower Density E^PROMs • Access Time: 90ns • Simple Byte and Page Write

f0138

Abstract: 28c512 x28c512
Contextual Info: U s u X28C512/X28C513 512K i ; 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • T w o PLCC and LCC Pinouts — X28C512 — X28C010 E2PROM Pin Compatible — X28C513 — Compatible with Lower Density E2PROMs * Access Time: 90ns * Simple Byte and Page Write

bit 3105

Contextual Info: Us e ADVANCED INFORMATION Commercial Industriai 512K X28C512 X28C512I 64K x 8 Bit Electrically Erasable PROM • Tw o PLCC Pinouts — X28C 512-U V EP R O M Replacements — X 28C 513-X 28C 256 Upgrades • Inherent 1 0 0 + Years Data Retention FEATURES • Low Pow er CMOS

x28c513-12

Abstract: X28C010 X28C512 X28C513 X28C512 xicor C3856
Contextual Info: X28C512/X28C513 X28C512/X28C513 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM • FEATURES 1 32 VCC PLCC / LCC 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 X28C512 NC 2 31 WE A15 3 30 NC A12 4 29 A14 A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25

x2864b

Abstract: X28C512I X28256 64 CERAMIC LEADLESS CHIP CARRIER LCC CERAMIC LEADLESS CHIP CARRIER X28C512 X28C512-20 X28C512-25 X28C512 xicor x2864a
Contextual Info: •JAN 3 1 IS., A D V A N C E D IN FO R M A TIO N c-ioi<■ 512K Com m ercial Industrial X28C512 X28C512I JÜBË oi+ 64Kx8Bit Electrically Erasable PROM • Two PLCC Pinouts — X 28C 512-U V EP R O M Replacements — X 28C 513-X 28C 256 Upgrades • Inherent 1 0 0 + Years Data Retention

Contextual Info: ADVANCED INFORMATION 512K Military 64K x 8 Bit X28C512M Electrically Erasable PROM • Two LCC Pinouts — X28C513GM-Growth Path from X28C256 — X28C512GM-Pinout Compatible with 1Meg EPROM • Inherent 100+ Years Data Retention FEATURES • Low Power CMOS

Contextual Info: •JAN 3 1 iSj, A D V A N C E D IN FO R M A TIO N c io M 512K Commercial Industrial X28C512 X28C512I 64Kx8Bit Electrically Erasable PROM • Tw o PLCC Pinouts — X 28C 512-U V EP R O M Replacements — X 28C 513-X 28C 256 Upgrades • Inherent 1 0 0 + Years Data Retention

X24C04DMB

Abstract: X24C16DMB 5962-8751403 Xicor 5962-8852506 X24C16DM 5962-8852506 smd code marking yx 60395 xicor 5962-8959001PX X24C16D
Contextual Info: Military Program Overview Xicor Military Program Overview cost to the customer and to assure full compliance with the requirements of MIL-STD-883, Xicor will, on occasion, respond with waiver requests. Xicor must review and accept a customer source control drawing prior to