XN4509 Search Results

XN4509 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
XN4509		Panasonic	Silicon NPN epitaxial planer transistor		Original	PDF
XN4509		Panasonic	Silicon NPN epitaxial planer transistor		Original	PDF
XN4509		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF

XN4509 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04509 (XN4509) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half	Original	2002/95/EC) XN04509 XN4509) 2SC4561	PDF
2SC4561 Abstract: XN04509 XN4509 Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04509 (XN4509) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05	Original	2002/95/EC) XN04509 XN4509) 2SC4561 XN04509 XN4509	PDF
2SC4561 Abstract: XN04509 XN4509 Text: Composite Transistors XN04509 XN4509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 50 V Rating Collector to emitter voltage of element Emitter to base voltage	Original	XN04509 XN4509) 2SC4561 2SC4561 XN04509 XN4509	PDF
2SC4561 Abstract: XN04509 XN4509 Text: Composite Transistors XN04509 XN4509 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° 1.1+0.2 –0.1 2SC4561 x 2 elements ■ Absolute Maximum Ratings 0 to 0.1 ● (Ta=25˚C) Parameter	Original	XN04509 XN4509) 2SC4561 2SC4561 XN04509 XN4509	PDF
2SC4561 Abstract: XN4509 Text: Composite Transistors XN4509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification +0.2 2.8 –0.3 +0.25 3 Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 50 V Rating Collector to emitter voltage of element Emitter to base voltage	Original	XN4509 2SC4561 2SC4561 XN4509	PDF
2SC4561 Abstract: XN04509 XN4509 Text: Composite Transistors XN04509 XN4509 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10	Original	XN04509 XN4509) 2SC4561 XN04509 XN4509	PDF
AN3962FB Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202 Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030	OCR Scan	MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202	PDF
gn2011 Abstract: XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT Text: • z s K e m m m * — 5/ Mini Type 6 -p in P ackage Outline Transistors, Diodes $ .-M { 6 f t ? ) U n it i mm S E ^ O S - S I O S i) ¿ P li/ 'f y 'T -'y V -i'X T h 7 > y ' 7 J 2 m ? k iL tm , - is . i f H ■ 43 f t I L « T A B U S ' < 7 > r -	OCR Scan	tiA-Ac37' MA334 MA345 MA551 MA704 MA152WA MA152WK MA153 MA151WA MA151WK gn2011 XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT	PDF