XU1002 Search Results

RF bpf image rejection filter

Abstract: BPF filter rf GHz MSTX-1823 MSRX-1823 WR42 microwave radio transmitter microwave rf transmitter XP1013 XU1002 RF Transceiver 28 ghz
Contextual Info: GaAs MMIC Transmitter - NEW MSTX-1823 June 2005 - Rev 01-Jun-05 General Description The MSTX-1823 is a low cost, highly integrated MMIC-based transmitter, suitable for use in the 18 to 23 GHz microwave radio bands. The transmitter design is based on two MMIC chips from Mimix Broadband, the XU1002 transmitter and the XP1013 medium power

RF Product Device Data

Abstract: XB1004 XP1013 XU1002-QD XU1002-QD-0N00 XU1002-QD-0N0T XU1002-QD-EV1
Contextual Info: 17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm U1002-QD July 2008 - Rev 14-Jul-08 Features Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +13 dBm P1dB 2.0 dBm LO Drive Level 20.0 dB Image Rejection, 9.0 dB Conversion Gain 7x7 mm, QFN

qpsk modulation transmitter ghz

Abstract: rf module with qpsk modulation 23GHz transceiver microwave radio transmitter MSRX-1823 XP1013-BD XR1006-BD XU1002-BD ghz hybrid coupler waveguide Transceiver 20 GHz
Contextual Info: Application of the 18/23 GHz Transceiver Modules The 18/23GHz Transceiver Transmitter/Receiver pair has been designed specifically for use in saturated or linear point-topoint microwave radios operating in the 18 GHz and 23 GHz ETSI band plans. The design is well suited for PDH radios

Contextual Info: 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT December 2006 - Rev 12-Dec-06 Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package

B1009

Abstract: XB1009-QT XB1009-QT-0G00 XB1009-QT-EV1 XP1022-QF XU1002 XU1002-QD XB1004-QC
Contextual Info: 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN P1022-QF July 2008 - Rev 17-Jul-08 Features Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package

Contextual Info: 14.0-30.0 GHz GaAs MMIC Buffer Amplifier B1009-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 18.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

84-1LMI

Abstract: U1002 XB1004 XP1013 XU1002
Contextual Info: 18.0-25.0 GHz GaAs MMIC Transmitter U1002 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain

VD135

Contextual Info: 18.0-25.0 GHz GaAs MMIC Transmitter U1002 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain

XB1004

Abstract: XP1013 XU1002-QD XU1002-QD-0N00 XU1002-QD-0N0T XU1002-QD-EV1 U1002-QD
Contextual Info: 17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm U1002-QD November 2006 - Rev 21-Nov-06 Features Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +13 dBm P1dB 2.0 dBm LO Drive Level 20.0 dB Image Rejection, 9.0 dB Conversion Gain 7x7 mm, QFN

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

B1009

Abstract: amplifier TRANSISTOR 12 GHZ qfn 3x3 16L XB1009-QT XB1009-QT-0G00 XB1009-QT-EV1 XP1022-QF XU1002 XU1002-QD
Contextual Info: 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package

B1009

Abstract: DM6030HK TS3332LD XB1004 XB1009-BD XU1002 B1009-BD
Contextual Info: 14.0-30.0 GHz GaAs MMIC Buffer Amplifier B1009-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 18.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

P1019-BD

Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1019-BD July 2006 - Rev 30-Jul-06 Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

QFN 7X7

Abstract: XP1013 XU1002-QD-0N00 XU1002-QD-0N0T XU1002-QD-EV1 XB1004 XU1002-QD 2,4 ghz transmitter
Contextual Info: 17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm U1002-QD May 2007 - Rev 29-May-07 Features Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +13 dBm P1dB 2.0 dBm LO Drive Level 20.0 dB Image Rejection, 9.0 dB Conversion Gain 7x7 mm, QFN

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD November 2006 - Rev 15-Nov-06 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

DM6030HK

Abstract: TS3332LD XB1004 XP1022-BD XU1002 TRANSISTOR 9642
Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

XB1009-QT

Abstract: XP1022-QF XP1022-QF-0N00 XP1022-QF-EV1 XU1002 XU1002-QD
Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN P1022-QF November 2006 - Rev 15-Nov-06 Features Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

P1019-BD

Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1019-BD July 2006 - Rev 30-Jul-06 Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

xg1015-SE

Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
Contextual Info: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com

XP1019-BD

Abstract: P1019-BD
Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1019-BD October 2008 - Rev 10-Oct-08 Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

DM6030HK

Abstract: TS3332LD XB1004-BD XP1013-BD XU1002-BD XU1002-BD-000V XU1002-BD-EV1 VD135
Contextual Info: 18.0-25.0 GHz GaAs MMIC Transmitter U1002-BD August 2007 - Rev 20-Aug-07 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN P1022-QF December 2008 - Rev 11-Dec-08 Features Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package