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    FLIP ELECTRONICS CY7C1645KV18-400BZXI

    NO WARRANTY
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    DigiKey CY7C1645KV18-400BZXI Bulk 630 2
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    FLIP ELECTRONICS CY7C1645KV18-450BZXI

    IC SRAM 144MBIT PAR 165FBGA
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    DigiKey CY7C1645KV18-450BZXI Tray 335 5
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    FLIP ELECTRONICS CY7C1648KV18-400BZXC

    DDR II+ 144MBIT 8M X 18 1.7V - 1
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    DigiKey CY7C1648KV18-400BZXC Tray 229 5
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    Infineon Technologies AG CY7C1645KV18-400BZXI

    IC SRAM 144MBIT PAR 165FBGA
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    DigiKey CY7C1645KV18-400BZXI Tray 6 1
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    Avnet Americas CY7C1645KV18-400BZXI Tray 0 Weeks, 2 Days 2
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    CY7C1645KV18-400BZXI Tray 11 Weeks 210
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    Mouser Electronics CY7C1645KV18-400BZXI
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    Rochester Electronics CY7C1645KV18-400BZXI 55 1
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    EBV Elektronik CY7C1645KV18-400BZXI 12 Weeks 210
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    Rochester Electronics LLC CY7C164-20PC

    IC SRAM 64KBIT PARALLEL 22DIP
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    DigiKey CY7C164-20PC Bulk 151
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    Y7C164 Datasheets Context Search

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    523-AV

    Abstract: KHA6
    Text: Y7C164 CY7C166 £s 16,384 x 4 Static R /W RAM SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • Output Enable O E feature (7C 166) • CMOS for optimum speed/powtr T he C Y7C164 and CY7C166 are high-perfoim ance CM O S staticR A M s organized as


    OCR Scan     		CY7C164 CY7C166 7C166) 164-45D 164-45LC 38-00032-C Y7C166-15PC 66-15V 166-15D 166-15LC 523-AV KHA6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Y7C164A CY7C166A 16,384 x 4 Static R/W RAM CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Output Enable OE feature (7C166A) • CMOS for optimum speed/power • High speed - 15 ns t*A • Low active power - 550 mW • Low standby power


    OCR Scan     		CY7C164A CY7C166A 7C166A) CY7C164A CY7C166A 7C166A PDF

    Untitled

    Abstract: No abstract text available
    Text: Y7C164A _ CY7C166A SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when deselected The Y7C164A and CY7C166A are highperformance CMOS static RAMs orga­ nized as 16,384 by 4 bits. Easy memory ex­


    OCR Scan     		CY7C164A CY7C166A 7C166A) CY7C164A PDF

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A PDF

    C104A

    Abstract: C104A-0
    Text: Y7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM Functional D escription I/0 3 is written into the memory location specified on the address pins Ao through Au). Reading the device is accomplished by taking chip enable (CE) LOW (and OE LOW for


    OCR Scan     		CY7C164A CY7C166A 7C166A) C104A C104A-0 PDF

    C1B4

    Abstract: C1B4 20 7c16615 CY7C164-15LC CY7C164-20DC CY7C164-20LC CY7C164 CY7C166 7c164-15 7C164
    Text: Y7C164 CY7C166 CYPRESS SEMICONDUCTOR 16,384 x 4 Static R/W RAM on the four input/output pins I/Oo through I/O3 is written into the memory location specified on the address pins (Ao through A 13). Reading the device is accomplished by taking chip enable (CE) LOW (and OE LOW for


    OCR Scan     		CY7C164 CY7C166 7C166) is4-35VC CY7C164-35DC CY7C164-35LC CY7C164-45PC CY7C164-45VC C1B4 C1B4 20 7c16615 CY7C164-15LC CY7C164-20DC CY7C164-20LC 7c164-15 7C164 PDF

    L1112

    Abstract: 3 phase inverter schematic diagram CY7C164A CY7C166A circuit 4810
    Text: CYPRESS 4DE SEMICONDUCTOR D m 2SÖ%b2 □ 0 0 4 ö ci l 3 I CYP T ^ ' ï i - i o Y7C164A CY7C166A CYPRESS SEMICONDUCTOR 16,384 x 4 Static R/W RAM I/Oj is written into the memory location specified on the address pins Ao through F u nctional D escription


    OCR Scan     		CY7C164A CY7C166A 7C166A) CY7C166A 7C166A L1112 3 phase inverter schematic diagram circuit 4810 PDF