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    ZVP3310 Search Results

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    ZVP3310 Price and Stock

    Diodes Incorporated ZVP3310FTA

    MOSFET P-CH 100V 75MA SOT23-3
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    DigiKey ZVP3310FTA Digi-Reel 15,813 1
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    ZVP3310FTA Cut Tape 15,813 1
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    ZVP3310FTA Reel 12,000 3,000
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    Avnet Americas ZVP3310FTA Reel 3,000 8 Weeks 3,000
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    Mouser Electronics ZVP3310FTA 7,661
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    Newark ZVP3310FTA Cut Tape 6,770 5
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    ZVP3310FTA Reel 3,000 3,000
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    Bristol Electronics ZVP3310FTA 200 7
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    Quest Components ZVP3310FTA 160
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    TME ZVP3310FTA 366 1
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    Ameya Holding Limited ZVP3310FTA 6,000
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    ComSIT USA ZVP3310FTA 6,000
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    Avnet Asia ZVP3310FTA 8 Weeks 3,000
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    Avnet Silica ZVP3310FTA 14 Weeks 3,000
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    New Advantage Corporation ZVP3310FTA 81,000 1
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    Win Source Electronics ZVP3310FTA 66,000
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    Diodes Incorporated ZVP3310A

    MOSFET P-CH 100V 140MA TO92-3
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    DigiKey ZVP3310A Bulk 5,913 1
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    Avnet Americas ZVP3310A Reel 8 Weeks 4,000
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    Mouser Electronics ZVP3310A 6,195
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    Newark ZVP3310A Cut Tape 3,795 1
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    Avnet Silica ZVP3310A 42 Weeks 4,000
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    Diodes Incorporated ZVP3310FTC

    MOSFET P-CH 100V 75MA SOT23-3
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    DigiKey ZVP3310FTC Reel 10,000
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    Diodes Incorporated ZVP3310ASTZ

    MOSFET P-CH 100V 140MA E-LINE
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    DigiKey ZVP3310ASTZ Ammo Pack 2,000
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    Diodes Incorporated ZVP3310ASTOB

    MOSFET P-CH 100V 140MA E-LINE
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    DigiKey ZVP3310ASTOB Reel 16,000
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    ZVP3310 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZVP3310 Zetex Semiconductors P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Original PDF
    ZVP3310 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZVP3310A Zetex Semiconductors P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Original PDF
    ZVP3310A Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZVP3310A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    ZVP3310A Unknown FET Data Book Scan PDF
    ZVP3310A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    ZVP3310A Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZVP3310ASTOA Zetex Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 140MA TO92-3 Original PDF
    ZVP3310ASTOB Zetex Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 140MA TO92-3 Original PDF
    ZVP3310ASTZ Zetex Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 140MA TO92-3 Original PDF
    ZVP3310B Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZVP3310B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    ZVP3310B Unknown FET Data Book Scan PDF
    ZVP3310B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    ZVP3310B Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZVP3310F Zetex Semiconductors SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Original PDF
    ZVP3310F Unknown Shortform Datasheet & Cross References Data Short Form PDF
    ZVP3310F Unknown FET Data Book Scan PDF
    ZVP3310F Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF

    ZVP3310 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ZVP3310A Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)100Í I(D) Max. (A)140m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)625m Minimum Operating Temp (øC)


    Original     		PDF ZVP3310A

    ZVP3310A

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP3310A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =20Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -100 V Continuous Drain Current at Tamb=25°C


    Original     		PDF ZVP3310A -100V ZVP3310A

    ZVP3310A

    Abstract: to92 fet p channel DSA003788
    Text: ZVP3310A VGS=-20V -16V -12V -0.6 -9V -8V -0.4 -7V -6V -0.2 -5V -4.5V -4V -3.5V -10 VGS= -20V -16V -14V -12V -10V -9V -0.6 -10V -20 -30 -40 ID - Drain Current Amps ID - Drain Current (Amps) TYPICAL CHARACTERISTICS -0.4 -6V -0.2 -5V -4V -2 -4 -6 -8 -10 VDS - Drain Source Voltage (Volts)


    Original     		PDF ZVP3310A -100V ZVP3310A to92 fet p channel DSA003788

    ZVN3310F

    Abstract: SOT23 N-CHANNEL FET 100V ZVP3310F DSA003736 3tf5
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – OCTOBER 1995 FEATURES * 100 Volt VDS * RDS on = 10Ω ✪ COMPLEMENTARY TYPE PARTMARKING DETAIL - ZVP3310F MF ZVN3310F S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage


    Original     		PDF ZVN3310F ZVP3310F ZVN3310F SOT23 N-CHANNEL FET 100V ZVP3310F DSA003736 3tf5

    P-Channel FET 100v

    Abstract: PARTMARKING mr ZVP3310 zvp3310f ZVN3310F DSA0037411 zvp331
    Text: ZVP3310F TYPICAL CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -9V -8V -7V -6V -0.2 -5V -4V -6 Drain Source -0.4 -8 -4 ID= -0.3A -2 -0.15A -0.075A -2 -4 -6 -8 -10 V I - Drain Current Amps -0.6 -10 -6 -8 -10 Voltage Saturation Characteristics Saturation Characteristics


    Original     		PDF ZVP3310F ZVN3310F -150mA P-Channel FET 100v PARTMARKING mr ZVP3310 zvp3310f ZVN3310F DSA0037411 zvp331

    Untitled

    Abstract: No abstract text available
    Text: ZVP3310B Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)100Í I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)3.0 Minimum Operating Temp (øC)


    Original     		PDF ZVP3310B

    Untitled

    Abstract: No abstract text available
    Text: ZVP3310F Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)75m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)330m Minimum Operating Temp (øC)-55õ


    Original     		PDF ZVP3310F

    DCT15EFD-U45S004

    Abstract: ceramic capacitor syfer 1u 25V 113k vishay crcw0805 ZVP3310 C2012X5R1C105K MMSD4148 CRCW0805 SOT23 N-CHANNEL FET 100V DCT15EFD
    Text: National Semiconductor LM5025 Power Applications Design Center, Americas May 2007 1.0 Design Specifications Inputs Output #1 VinMin=30V Vout1=15V VinMax=60V Iout1=1.5A 2.0 Design Description This circuit uses the LM5025 voltage mode PWM controller with complementary gate drives to implement a high-efficiency single-ended active clamp forward converter.


    Original     		PDF LM5025 LM5025 CSP-9-111S2) CSP-9-111S2. DCT15EFD-U45S004 ceramic capacitor syfer 1u 25V 113k vishay crcw0805 ZVP3310 C2012X5R1C105K MMSD4148 CRCW0805 SOT23 N-CHANNEL FET 100V DCT15EFD

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    zvp3310

    Abstract: No abstract text available
    Text: Electrical Specifications Subject to Change LT8490 High Voltage, High Current Buck-Boost Battery Charge Controller with Maximum Power Point Tracking MPPT Description Features VIN Range: 6V to 80V n V BAT Range: 1.3V to 80V n Single Inductor Allows V Above, Below, or Equal


    Original     		PDF LT8490 100kHz 400kHz 64-Lead LT3652/LT3652HV LT3652) LTC4000-1 LTC4020 com/LT8490 zvp3310

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZVN3310F 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • 100 10 VDS V RDS(ON) (Ω) Description and Applications This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically


    Original     		PDF ZVN3310F DS31980

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    schematic diagram 48v battery charger lead acid

    Abstract: 2sd2704
    Text: LT8490 High Voltage, High Current Buck-Boost Battery Charge Controller with Maximum Power Point Tracking MPPT Description Features VIN Range: 6V to 80V n V BAT Range: 1.3V to 80V n Single Inductor Allows V Above, Below, or Equal IN to VBAT n Automatic MPPT for Solar Powered Charging


    Original     		PDF LT8490 100kHz 400kHz 64-Lead 12063C105KAT2A LT3652/LT3652HV LT3652) LTC4000-1 LTC4020 com/LT8490 schematic diagram 48v battery charger lead acid 2sd2704

    Untitled

    Abstract: No abstract text available
    Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 ZVP3310F Q FEATURES * 100 V o lt VDS * R o s to v a COM PLEM ENTARY TYPE - ZVN3310F PARTMARKING DETAIL - MR ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL VALUE U N IT -100 V 75 rrsA -1.2


    OCR Scan     		PDF ZVP3310F ZVN3310F -100V, -150m

    Untitled

    Abstract: No abstract text available
    Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -OCTOBER 1995 ZVP3310F O FEATURES * 100 V o lt V DS * RDS,on =20n CO M PLEM ENTARY TYPE - ZVN3310F PAR TM ARKING DETAIL - MR ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L D ra in -S o u rc e V o lta g e


    OCR Scan     		PDF ZVP3310F ZVN3310F

    ZVP3310

    Abstract: zeitex
    Text: bOE CH 7 D S 7 B D ZETEX G G D 7 C14S 7T4 SEMICONDUCTORS P-channel enhancement mode vertical D M OS FET ZVP3310 FEA TU R ES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance


    OCR Scan     		PDF ZVP3310 F-244 F-245 ZVP3310 F-246 F-247 F-248 zeitex

    ZVP3310

    Abstract: 2U53 T9500 3310T G335 ZVP3310B g336 G337 ZVP P-channel
    Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY DE^j 7550533 ODDSflBB 3 | ~ SEM ICO ND/DISCRETE 95D 05833 T - 3 7 - 2 S ' P-channel enhancement mode vertical D M O S FET ZVP3310 FEAT U RES • C om pact geometry • Fast sw itching speeds • No secondary breakdown


    OCR Scan     		PDF ZVP3310 G-339 G-340 G-341 G-342 ZVP3310 2U53 T9500 3310T G335 ZVP3310B g336 G337 ZVP P-channel

    MF SOT23

    Abstract: ZVN3310F partmarking 6 C SOT23 N-CHANNEL FET 100V
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 ZVN3310F O_ FEATURES * 100 Volt VDS * RDS oni=10“ CO M PLEM ENTARY TYPE • ZVP3310F PARTMARKING DETAIL - MF SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Continuous Drain Current at T amtj=25°C


    OCR Scan     		PDF ZVN3310F ZVP3310F 300jis. MF SOT23 ZVN3310F partmarking 6 C SOT23 N-CHANNEL FET 100V

    Untitled

    Abstract: No abstract text available
    Text: SOT23 N-CHANNEL ENHANCEMENT M ODE VERTICAL D M O S FET ISSUE 3 - OCTOBER 1995 FEATURES * 100 Volt VDS * O_ R DS on = 1 0 ß C O M PLEM EN TA RY TYPE PARTM ARKING DETAIL - ZVP3310F MF SOT23 ABSOLUTE MAXIM UM RATINGS. VALUE UNIT V ds 100 V Continuous Drain Current at Tamtj=25°C


    OCR Scan     		PDF ZVP3310F

    Untitled

    Abstract: No abstract text available
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -O C T O B E R 1995 ZVN3310F O _ FEATURES * 100 V o lt V DS * R D S o n r1 0 ii C O M PLEM EN TAR Y T Y P E - ZVP3310F PARTM ARKING DETAIL - MF SOT23 ABSOLUTE MAXIMUM RATINGS.


    OCR Scan     		PDF ZVN3310F ZVP3310F

    Untitled

    Abstract: No abstract text available
    Text: D SbE • ^70576 0D07052 7Tb H Z E T B SEMICONDUCTOR DICE MOSFETs - N-CHANNEL B V 0SS Dice type ZVN0540 Min. ZETEX f'DSIonI Max. at lD V qs SEMICONDUCTORS Max. IDSS at Max. IGSS at 'd m Rated VDS V GS=20V Min. atV0S ^GS th Chip Min. Max. at lD geometry at


    OCR Scan     		PDF 0D07052 ZVN0540 ZVNL535 ZVN2535 ZVN0124 ZVP2120 ZVP1320 ZVP2110 ZVP3310 ZVP2106