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    ZVP3310F Search Results

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    ZVP3310F Price and Stock

    Diodes Incorporated ZVP3310FTA

    MOSFET P-CH 100V 75MA SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZVP3310FTA Cut Tape 10,715 1
    • 1 $0.56
    • 10 $0.376
    • 100 $0.56
    • 1000 $0.18249
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    ZVP3310FTA Digi-Reel 10,715 1
    • 1 $0.56
    • 10 $0.376
    • 100 $0.56
    • 1000 $0.18249
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    ZVP3310FTA Reel 9,000 3,000
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    Avnet Americas ZVP3310FTA Reel 3,000 8 Weeks 3,000
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    ZVP3310FTA Reel 3,000
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    Mouser Electronics ZVP3310FTA 7,241
    • 1 $0.56
    • 10 $0.376
    • 100 $0.278
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    Arrow Electronics ZVP3310FTA 12,000 8 Weeks 3,000
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    ZVP3310FTA 6,000 8 Weeks 3,000
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    ZVP3310FTA Cut Strips 1,763 8 Weeks 1
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    Newark ZVP3310FTA Cut Tape 6,770 5
    • 1 $0.645
    • 10 $0.499
    • 100 $0.331
    • 1000 $0.32
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    ZVP3310FTA Reel 3,000 3,000
    • 1 $0.123
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    RS ZVP3310FTA Bulk 25
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    Bristol Electronics ZVP3310FTA 200 7
    • 1 -
    • 10 $0.75
    • 100 $0.375
    • 1000 $0.225
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    Quest Components ZVP3310FTA 160
    • 1 $1
    • 10 $0.5
    • 100 $0.3
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    TME ZVP3310FTA 366 1
    • 1 $0.577
    • 10 $0.436
    • 100 $0.293
    • 1000 $0.203
    • 10000 $0.176
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    Ameya Holding Limited ZVP3310FTA 6,000
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    ComSIT USA ZVP3310FTA 9,235
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    Chip 1 Exchange ZVP3310FTA 11,700
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    Avnet Asia ZVP3310FTA 8 Weeks 3,000
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    Avnet Silica ZVP3310FTA 10 Weeks 3,000
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    New Advantage Corporation ZVP3310FTA 45,000 1
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    • 10000 $0.1643
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    Win Source Electronics ZVP3310FTA 66,000
    • 1 -
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    • 100 -
    • 1000 $0.127
    • 10000 $0.105
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    Diodes Incorporated ZVP3310FTC

    MOSFET P-CH 100V 75MA SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZVP3310FTC Reel 10,000
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    • 1000 -
    • 10000 $0.23125
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    Diodes Incorporated ZVP3310FTA-50

    Transistor MOSFET P-Channel 100V 75mA 3-Pin SOT-23 T/R - Tape and Reel (Alt: ZVP3310FTA-50)
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    Avnet Americas ZVP3310FTA-50 Reel 12 Weeks 3,000
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    Diodes Incorporated ZVP3310FTA-52

    - Tape and Reel (Alt: ZVP3310FTA-52)
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    Avnet Americas ZVP3310FTA-52 Reel 12 Weeks 3,000
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    Diodes Incorporated ZVP3310FQTA-52

    - Tape and Reel (Alt: ZVP3310FQTA-52)
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    Avnet Americas ZVP3310FQTA-52 Reel 12 Weeks 3,000
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    Find more ZVP3310F price and stock on Findchips.com

    ZVP3310F Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZVP3310F Zetex Semiconductors SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Original PDF
    ZVP3310F Unknown Shortform Datasheet & Cross References Data Short Form PDF
    ZVP3310F Unknown FET Data Book Scan PDF
    ZVP3310F Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZVP3310FTA Zetex Semiconductors TRANS MOSFET P-CH 100V 0.075A 3SOT23 T/R Original PDF
    ZVP3310FTC Zetex Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 75MA SOT23-3 Original PDF

    ZVP3310F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZVN3310F

    Abstract: SOT23 N-CHANNEL FET 100V ZVP3310F DSA003736 3tf5
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – OCTOBER 1995 FEATURES * 100 Volt VDS * RDS on = 10Ω ✪ COMPLEMENTARY TYPE PARTMARKING DETAIL - ZVP3310F MF ZVN3310F S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage


    Original     		PDF ZVN3310F ZVP3310F ZVN3310F SOT23 N-CHANNEL FET 100V ZVP3310F DSA003736 3tf5

    P-Channel FET 100v

    Abstract: PARTMARKING mr ZVP3310 zvp3310f ZVN3310F DSA0037411 zvp331
    Text: ZVP3310F TYPICAL CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -9V -8V -7V -6V -0.2 -5V -4V -6 Drain Source -0.4 -8 -4 ID= -0.3A -2 -0.15A -0.075A -2 -4 -6 -8 -10 V I - Drain Current Amps -0.6 -10 -6 -8 -10 Voltage Saturation Characteristics Saturation Characteristics


    Original     		PDF ZVP3310F ZVN3310F -150mA P-Channel FET 100v PARTMARKING mr ZVP3310 zvp3310f ZVN3310F DSA0037411 zvp331

    Untitled

    Abstract: No abstract text available
    Text: ZVP3310F Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)75m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)330m Minimum Operating Temp (øC)-55õ


    Original     		PDF ZVP3310F

    DCT15EFD-U45S004

    Abstract: ceramic capacitor syfer 1u 25V 113k vishay crcw0805 ZVP3310 C2012X5R1C105K MMSD4148 CRCW0805 SOT23 N-CHANNEL FET 100V DCT15EFD
    Text: National Semiconductor LM5025 Power Applications Design Center, Americas May 2007 1.0 Design Specifications Inputs Output #1 VinMin=30V Vout1=15V VinMax=60V Iout1=1.5A 2.0 Design Description This circuit uses the LM5025 voltage mode PWM controller with complementary gate drives to implement a high-efficiency single-ended active clamp forward converter.


    Original     		PDF LM5025 LM5025 CSP-9-111S2) CSP-9-111S2. DCT15EFD-U45S004 ceramic capacitor syfer 1u 25V 113k vishay crcw0805 ZVP3310 C2012X5R1C105K MMSD4148 CRCW0805 SOT23 N-CHANNEL FET 100V DCT15EFD

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    zvp3310

    Abstract: No abstract text available
    Text: Electrical Specifications Subject to Change LT8490 High Voltage, High Current Buck-Boost Battery Charge Controller with Maximum Power Point Tracking MPPT Description Features VIN Range: 6V to 80V n V BAT Range: 1.3V to 80V n Single Inductor Allows V Above, Below, or Equal


    Original     		PDF LT8490 100kHz 400kHz 64-Lead LT3652/LT3652HV LT3652) LTC4000-1 LTC4020 com/LT8490 zvp3310

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZVN3310F 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • 100 10 VDS V RDS(ON) (Ω) Description and Applications This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically


    Original     		PDF ZVN3310F DS31980

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    schematic diagram 48v battery charger lead acid

    Abstract: 2sd2704
    Text: LT8490 High Voltage, High Current Buck-Boost Battery Charge Controller with Maximum Power Point Tracking MPPT Description Features VIN Range: 6V to 80V n V BAT Range: 1.3V to 80V n Single Inductor Allows V Above, Below, or Equal IN to VBAT n Automatic MPPT for Solar Powered Charging


    Original     		PDF LT8490 100kHz 400kHz 64-Lead 12063C105KAT2A LT3652/LT3652HV LT3652) LTC4000-1 LTC4020 com/LT8490 schematic diagram 48v battery charger lead acid 2sd2704

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    complementary MOSFET TO252

    Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
    Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and


    Original     		PDF D-81541 A1103-04, complementary MOSFET TO252 zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4

    Untitled

    Abstract: No abstract text available
    Text: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being


    Original     		PDF ZXMN2B14FHÂ ZXMN2F30FHÂ ZXMN2F34FHÂ ZXMN3A01FÂ ZXMN3A02N8Â ZXMN3A04DN8Â ZXMN3A06DN8Â ZXMN3A14FÂ ZXMN3B01FÂ ZXMN3B04N8Â

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    Untitled

    Abstract: No abstract text available
    Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 ZVP3310F Q FEATURES * 100 V o lt VDS * R o s to v a COM PLEM ENTARY TYPE - ZVN3310F PARTMARKING DETAIL - MR ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL VALUE U N IT -100 V 75 rrsA -1.2


    OCR Scan     		PDF ZVP3310F ZVN3310F -100V, -150m

    Untitled

    Abstract: No abstract text available
    Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -OCTOBER 1995 ZVP3310F O FEATURES * 100 V o lt V DS * RDS,on =20n CO M PLEM ENTARY TYPE - ZVN3310F PAR TM ARKING DETAIL - MR ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L D ra in -S o u rc e V o lta g e


    OCR Scan     		PDF ZVP3310F ZVN3310F

    MF SOT23

    Abstract: ZVN3310F partmarking 6 C SOT23 N-CHANNEL FET 100V
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 ZVN3310F O_ FEATURES * 100 Volt VDS * RDS oni=10“ CO M PLEM ENTARY TYPE • ZVP3310F PARTMARKING DETAIL - MF SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Continuous Drain Current at T amtj=25°C


    OCR Scan     		PDF ZVN3310F ZVP3310F 300jis. MF SOT23 ZVN3310F partmarking 6 C SOT23 N-CHANNEL FET 100V

    Untitled

    Abstract: No abstract text available
    Text: SOT23 N-CHANNEL ENHANCEMENT M ODE VERTICAL D M O S FET ISSUE 3 - OCTOBER 1995 FEATURES * 100 Volt VDS * O_ R DS on = 1 0 ß C O M PLEM EN TA RY TYPE PARTM ARKING DETAIL - ZVP3310F MF SOT23 ABSOLUTE MAXIM UM RATINGS. VALUE UNIT V ds 100 V Continuous Drain Current at Tamtj=25°C


    OCR Scan     		PDF ZVP3310F

    Untitled

    Abstract: No abstract text available
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -O C T O B E R 1995 ZVN3310F O _ FEATURES * 100 V o lt V DS * R D S o n r1 0 ii C O M PLEM EN TAR Y T Y P E - ZVP3310F PARTM ARKING DETAIL - MF SOT23 ABSOLUTE MAXIMUM RATINGS.


    OCR Scan     		PDF ZVN3310F ZVP3310F

    B558

    Abstract: B55123 BSS84A ZVN3310F ZVN4206E BSS66 BSS67 BSS79B BSS79C FMMT2222
    Text: SOT-23 TRANSISTORS & DIODES SWITCHING TRANSISTORS NPN V cbo Volts Type BSS79B 75 75 B SS79C FMM T2222A 75 FMMT4400 60 60 FMMT4401 60 BSS66 BSS67 60 60 FMMT3903 FMMT3904 60 60 FMMT2222 40 FMMT4123 FMM T4124 30 FMMT2369A 40 40 FMMT2369 BSV52 20 VcEO Volts


    OCR Scan     		PDF OT-23 BSS79B BSS79C FMMT2222A FMMT4400 FMMT4401 BSS66 BSS67 FMMT3903 FMMT3904 B558 B55123 BSS84A ZVN3310F ZVN4206E FMMT2222

    ZVP3306F

    Abstract: ZVP3310F DS400
    Text: ZVP3306F SOT23 P CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET PARTM ARK1NG DETA IL - ZVP3306F - M L ABSOLUTE M A X IM U M RATINGS PARAMETER SY M B O L Drain-Source Voltage Continuous Drain Current @ Tamb=25'C Pulsed Drain Current Gate-Source Voltage M ax Power Dissipation @ Tamb=25"C


    OCR Scan     		PDF ZVP3306F -150mA, -150mA Vdd--25V, DS402 ZVP3310F DS403 DS400

    ZVN3320F

    Abstract: ZVN3320
    Text: SELECTION TABLES TABLE 4: SOT-23 MOSFETS 'SOTFETS' Part number B V Dss Idm at Max. V mA A Min. Pd ^D SIon l V GSIthl J mA ft a Max. V GS mA V W Package marking N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 MU B S S1 2 3 100 170 0.68 0.8 2.8 1 6 100 10 360


    OCR Scan     		PDF OT-23 ZVN3320F ZVN3310F ZVN4106F ZVN3306F 2N7002 VN10LF BS170F BSS13 ZVP1320F ZVN3320