rf mems switch spst
Abstract: SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01
Text: R F switching options: The right fit might come with a loss Manufacturers are offering SOI and MEMS alternatives to PIN-diode, GaAs, and electromechanical switches for a variety of RF applications, but you need to understand RF-switch specs before you commit to a new technology.
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AN-952,
com/090917cs
rf mems switch spst
SKY13317-373
Hittite RF Switch SOI
military switch
EDN handbook
rf3024
SKY13317-373LF
RF3023
RF3025
2SMES-01
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Si5853DC
Abstract: Si5853DC-T1
Text: Si5853DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.110 @ VGS = -4.5 V -3.6 -20 0.160 @ VGS = -2.5 V -3.0 0.240 @ VGS = -1.8 V -2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (v)
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Si5853DC
Si5853DC-T1
S-21251--Rev.
05-Aug-02
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Untitled
Abstract: No abstract text available
Text: S2122PA200FE preliminary datasheet flowPhase 2 S 1200V/200A Features flowScrew 2 housing ● 1/2 bridge ● Low inductive ● Screw package ● NTC Target Applications ● Motor drive ● UPS ● Solar Schematic Types ● S2122PA200FE Maximum Ratings Tj=25°C, unless otherwise specified
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S2122PA200FE
200V/200A
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Untitled
Abstract: No abstract text available
Text: S2122PA200SC preliminary datasheet flowPhase 2 S 1200V/200A Features flowScrew 2 housing ● 1/2 bridge ● Low inductive ● Screw package ● NTC Target Applications ● Motor drive ● UPS ● Solar Schematic Types ● S2122PA200SC Maximum Ratings Tj=25°C, unless otherwise specified
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S2122PA200SC
200V/200A
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Untitled
Abstract: No abstract text available
Text: S2124PA300SC preliminary datasheet flowPhase 2 S 1200V/300A Features flowScrew 2 housing ● 1/2 bridge ● Low inductive ● Screw package ● NTC Target Applications ● Motor drive ● UPS ● Solar Schematic Types ● S2124PA300SC Maximum Ratings Tj=25°C, unless otherwise specified
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S2124PA300SC
200V/300A
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Untitled
Abstract: No abstract text available
Text: S112S01 Series S212S01 Series S112S01 Series S212S01 Series IT rms ≤12A, Non-Zero Cross type SIP 4pin Triac output SSR • Description ■ Agency approvals/Compliance S112S01 Series and S212S01 Series Solid State Relays (SSR) are an integration of an infrared emitting
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S112S01
S212S01
UL508
E94758
S112S01)
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600v plating phase rectifier diagram
Abstract: shin-etsu g747 origin 4pin phototriac S212S01 LR63705 S112S01 Dow Corning 747 12A125VAC
Text: S112S01 Series S212S01 Series S112S01 Series S212S01 Series IT rms ≤12A, Non-Zero Cross type SIP 4pin Triac output SSR • Description ■ Agency approvals/Compliance S112S01 Series and S212S01 Series Solid State Relays (SSR) are an integration of an infrared emitting
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S112S01
S212S01
UL508
E94758
S112S01)
600v plating phase rectifier diagram
shin-etsu g747
origin 4pin
phototriac
LR63705
Dow Corning 747
12A125VAC
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RM10TB-H
Abstract: 1S1288R T20A6 Sanken STR BYX13 varo diode tm59 Diode Westcode BYX25-800 22DC11
Text: SILICON RECTIFIERS, UNDER 1 kV Item Number •o Part Number Manufacturer Max A V VF IR "F RRM IFSM Max (V) (A) (V) @ Test (A) 25 °C @ (A) VR IR Test (V) (A) @ T2 Test (°C) T Op«r Max (°C) Package Style General-Purpose, lo >= 10 A (Cont'd) . . . .5 .
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1N2283
DG20AA40M
DG20AA40
S20-04
BYX13-400
TR502
TR500
ITT5404
S5AN21
VHE2407
RM10TB-H
1S1288R
T20A6
Sanken STR
BYX13
varo diode
tm59
Diode Westcode
BYX25-800
22DC11
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SM05C
Abstract: bidirectional zener diodes zener diode c1 zener diode cross reference Zener diode DW diode ZENER C2 S211 S212 Pi filter array design Zener Diodes introduce
Text: AND8200/D Design Considerations for ESD/EMI Filters: I Almost Everything You Wanted to Know About EMI Filters and Were Afraid to Ask http://onsemi.com Prepared by: Ryan Hurley Applications Engineer ON Semiconductor APPLICATION NOTE Background With data transfer rates and clock frequencies ever
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AND8200/D
SM05C
bidirectional zener diodes
zener diode c1
zener diode cross reference
Zener diode DW
diode ZENER C2
S211
S212
Pi filter array design
Zener Diodes introduce
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Si5902DC
Abstract: Si5902DC-T1 marking code ca
Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Si5902DC
Si5902DC-T1
S-21251--Rev.
05-Aug-02
marking code ca
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Si5406DC-T1
Abstract: Si5406DC
Text: Si5406DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 rDS(on) (Ω) ID (A) 0.020 @ VGS = 4.5 V 9.5 0.025 @ VGS = 2.5 V 8.5 D TrenchFETr Power MOSFETS: 2.5-V Rated D Low Thermal Resistance APPLICATIONS D Load/Power Switching for Cell Phones and
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Si5406DC
Si5406DC-T1
S-21251--Rev.
05-Aug-02
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Si5905DC
Abstract: Si5905DC-T1 MARKING CODE DB
Text: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5905DC
Si5905DC-T1
S-21251--Rev.
05-Aug-02
MARKING CODE DB
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ChipFET
Abstract: Si5933DC Si5933DC-T1
Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.110 @ VGS = -4.5 V -3.6 -20 0.160 @ VGS = -2.5 V -3.0 0.240 @ VGS = -1.8 V -2.4 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5933DC
Si5933DC-T1
S-21251--Rev.
05-Aug-02
ChipFET
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Si5513DC
Abstract: Si5513DC-T1
Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel -20 20 rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = -4.5 V -2.9 0.260 @ VGS = -2.5 V -2.2
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Si5513DC
Si5513DC-T1
S-21251--Rev.
05-Aug-02
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Si5404DC
Abstract: Si5404DC-T1
Text: Si5404DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.030 @ VGS = 4.5 V 7.2 0.045 @ VGS = 2.5 V 5.9 D 1206-8 ChipFETt 1 D D D D D D G G S Marking Code AB XX Lot Traceability and Date Code S Part # Code
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Si5404DC
Si5404DC-T1
S-21251--Rev.
05-Aug-02
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ChipFET
Abstract: Si5904DC Si5904DC-T1
Text: Si5904DC Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability and Date Code
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Si5904DC
Si5904DC-T1
S-21251--Rev.
05-Aug-02
ChipFET
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Si5402DC
Abstract: Si5402DC-T1
Text: Si5402DC Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFETt 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code Bottom View
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Si5402DC
Si5402DC-T1
S-21251--Rev.
05-Aug-02
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Si5915DC
Abstract: Si5915DC-T1
Text: Si5915DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D Low Thermal Resistance D 40% Smaller Footprint Than TSOP-6 VDS (V) rDS(on) (Ω) ID (A) 0.070 @ VGS = -4.5 V -4.6 -8 0.108 @ VGS = -2.5 V -3.7
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Si5915DC
Si5915DC-T1
S-21251--Rev.
05-Aug-02
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Si5975DC
Abstract: Si5975DC-T1
Text: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5975DC
Si5975DC-T1
S-21251--Rev.
05-Aug-02
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Si5504DC
Abstract: Si5504DC-T1
Text: Si5504DC Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel -30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = -10 V "2.8 0.290 @ VGS = -4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET S2 1 S1 D1
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Si5504DC
Si5504DC-T1
S-21251--Rev.
05-Aug-02
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MARKING CODE EA
Abstract: No abstract text available
Text: Si5504DC Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel -30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = -10 V "2.8 0.290 @ VGS = -4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET S2 1 S1 D1
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Si5504DC
Si5504DC-T1
08-Apr-05
MARKING CODE EA
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ftc s212
Abstract: TO-92SP-4 4 pin 2-phase hall effect driver FS212-B ftcs212 B 500 diode S6458 2 PHASE DC MOTOR DRIVE IC 2-PHASE DC MOTOR DRIVE IC
Text: FS212 Technology 2 PHASE DC MOTOR DRIVE IC GENERAL DESCRIPTION The FS212, a 1-chip composed of hall sensor and output coil drivers, applied to 2-phase DC motor. The high sensitivity of Hall effect sensor is suitable for motors from mini-type CPU coolers to blowers and DC fans. Typical operation current is 0.4A and operating voltage
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FS212
FS212,
P13/FS212
FS212-B
212-B
FS212-A
O-92SP-4
ftc s212
TO-92SP-4
4 pin 2-phase hall effect driver
FS212-B
ftcs212
B 500 diode
S6458
2 PHASE DC MOTOR DRIVE IC
2-PHASE DC MOTOR DRIVE IC
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Si5903DC
Abstract: Si5903DC-T1
Text: Si5903DC Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.155 @ VGS = -4.5 V 2.9 0.180 @ VGS = -3.6 V 2.7 0.260 @ VGS = -2.5 V 2.2 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5903DC
Si5903DC-T1
08-Apr-05
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Si5406DC
Abstract: Si5406DC-T1
Text: Si5406DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 rDS(on) (Ω) ID (A) 0.020 @ VGS = 4.5 V 9.5 0.025 @ VGS = 2.5 V 8.5 D TrenchFETr Power MOSFETS: 2.5-V Rated D Low Thermal Resistance APPLICATIONS D Load/Power Switching for Cell Phones and
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Si5406DC
Si5406DC-T1
08-Apr-05
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