L7180

Abstract: quad darlington 80V diagram DARLINGTON quad darlington L7182
Contextual Info: L7180 17182 LINEAR INTEGRATED CIRCUITS PR E LIM IN A R Y DATA 80V QUAD D A RLINGTON SWITCHES • • • • • FOUR NPN D A R LIN G T O N S W ITH IS O LA T E D CONNECTIO NS O UTPUT C UR R E N T TO 1.5A EACH D A R LIN G T O N M IN IM U M BREAKDO W N 80V S U S TA IN IN G V O L T A G E A T LEAST 50V

4 PIN IC Optocoupler with Phototransistor Output

Abstract: double channel optocoupler IC cny74 CNY74-2 CNY74-2H CNY74-4 CNY74-4H CSA22 CNY74 marking code 4h diode
Contextual Info: CNY74-2H, CNY74-4H Vishay Semiconductors Optocoupler, Phototransistor Output, Multichannel FEATURES E C C • • • • • • • • • • • E 9 1 A C C A 8 PIN 16 PIN 17188 C DESCRIPTION The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting

722560-1

Abstract: AWG26-20 170204-2 br el
Contextual Info: THIS LOC D IS T DRAWING IS A CONTROLLED DOCUMENT. R E V IS IO N S jÉ / P J LTR D E S C R IP TIO N REVISED G1 PE R DATE DWN RK HMR 13APR11 ECO-11-005294 A APVD MAX 0.5 W - tfS (CUTTING 1.7 + DIM.) 0.2 ^ I o •HO Csj A-A 9 9 n B-B C-C NOTES 1 1 HOUSINGS, P/N: 171822 AND 171880

Contextual Info: 1718-0402 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40ö V(BR)CBO (V)40 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-1202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-0805 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80ö V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-1605 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160ö V(BR)CBO (V)160 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-1602 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160ö V(BR)CBO (V)160 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-1402 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140ö V(BR)CBO (V)140 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-0602 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ö V(BR)CBO (V)60 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-0802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80ö V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180 V(BR)CBO (V)180 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-0605 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ö V(BR)CBO (V)60 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-0405 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40ö V(BR)CBO (V)40 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-1805 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)180 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-1002 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-1405 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140ö V(BR)CBO (V)140 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: T O S H I B A { D I S 9097250 C R E T E T O S H IB A / O P T O T } < D IS C R E T E /O P T O > í 99D D E I T D T T S 17184 S D □ □ 1 7 1 A IT F 4 l-a | T L R C I 23 , T L R C I 24 GaAIAs RED LIGHT EMISSION FEATURES: • ULTRA-BRIGHT • All Plastic Mold Type

Contextual Info: TOSHIBA íDISCRETE/OPTOJ » F | t DT75S0 DD171fll B 9097250 TOSHIBA DISCRETE/OPTO 99D 17181 D -p-VH-Sl TL0263 P G a A sP O R A N G E L IG H T E M IS S IO N Unit in {am FEATURES: . All Plastic Hold Type : Light Orange Transparent Lens • Wide Radiation Pattern-Suitable for Backlighting

HM5A110PP

Contextual Info: • i ISHEET I 8 i I I File No. I 259 J- A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A ill ill -Iin nI-i A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A V P.C.Board Layout Top View

PA66GF30

Abstract: 1355063 pa66-gf30 PBT-GF30 Contact amp pbt-gf30 PBT-GF30 CONNECTOR 114180 AMP PBT-GF30
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. A-A VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG C COPYRIGHT1996 2 3 - RELEASED FOR PUBLICATION Mar. FREI FUER VEROEFFENTLICHUNG ALL RIGHTS RESERVED. ALLE RECHTE VORBEHALTEN 1996 1 MATED WITH: PASSEND ZU: LOC AI 1718230 REVISIONS

Contextual Info: ÎT TOSHIBA {DIS CR ETE/ OP TO} 9097250 TOSHIBA ÍDISCRETE/OPTO Ì )F |'Ì 0 ,:17ESD 0G171flt 1 | ~ 99D 17186 Orp.41 -5 / T L R C I 3 3A, T L R C I 3 4 A , T L R C I 3 5 A , T L R C I 3 6 A GaAIAs RED LIGHT EMISSION FEATURES: • ULTRA-BRIGHT * All Plastic Mold Type

Contextual Info: H æ A F R R IS H S E M I C O N D U C T O R 1 7 1 8 8 8-Channel, 16-Bit High Precision Sigma-Delta A/D Sub-System July 1996 Features Description • Fully Differential 8 Channel Multiplexer and Reference The H 17188 is an easy-to-use 8 channel sigm a-delta pro­