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    A 708 TRANSISTOR Search Results

    A 708 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A 708 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EEFK1A21AP

    Abstract: No abstract text available
    Text: User's Guide SLVU430 – January 2011 TPS5401EVM-708 0.5-A, SWIFT Regulator Evaluation Module This user's guide contains background information for the TPS5401 as well as support documentation for the TPS5401EVM-708 evaluation module HPA708 . Also included are the performance specifications, the


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    PDF SLVU430 TPS5401EVM-708 TPS5401 HPA708) TPS5401EVM-708. EEFK1A21AP

    schematic diagram UPS 600 Power free

    Abstract: transistor manual substitution FREE mini ups system circuit design SP705E schematic diagram mini UPS SP705 SP706 SP707 SP708 SP813L
    Text: SP705-SP708-SP813L Low Power Microprocessor Supervisory Circuits June 2010 Rev. 2.0.0 GENERAL DESCRIPTION APPLICATIONS The SP705-708/813L series is a family of microprocessor µP supervisory circuits that integrate myriad components involved in discrete solutions which monitor power-supply


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    PDF SP705-SP708-SP813L SP705-708/813L schematic diagram UPS 600 Power free transistor manual substitution FREE mini ups system circuit design SP705E schematic diagram mini UPS SP705 SP706 SP707 SP708 SP813L

    breakdown gate oxide

    Abstract: an7081 trapped plasma avalanche C1995 11027 AN-708 national
    Text: National Semiconductor Application Note 708 Greg Komoto Marshall Davis Eric Hall June 1990 INTRODUCTION In determining the reliability of a MOS process it’s important to consider two prime factors gate oxide quality and the susceptibility of MOSFETs to hot carrier degradation It’s


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    PDF 20-3A breakdown gate oxide an7081 trapped plasma avalanche C1995 11027 AN-708 national

    transistor B A O 33st

    Abstract: marking CER 5-pin
    Text:   0LFURSRZHU P$ /RZ 'URSRXW &026 5HJXODWRU 0,9:708 Product Description ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ The CM3014 is a very low dropout, low noise regulator that delivers up to 150mA of load current at a fixed output voltage. 9DULRXV UHJXODWHG RXWSXW YROWDJHV


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    PDF CM3014 150mA MO-178) OT23-5. transistor B A O 33st marking CER 5-pin

    DK-7575

    Abstract: 02ATEX
    Text: Electronic Terminal Block with Optocoupler 1/2 Data sheet 56 mm / 2.2 in Optocoupler for DIN 35 rail A2 - 0V A1 + A RL +24 V 91 mm / 3.58 in Item-No. Description Input DC 24 V, Output DC 24 V / 500 mA negative switching Pack.-unit pcs 859-708 • Optocoupler for medium switching powers.


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    PDF UL508 CSA22 E175199, UL1604/ E198726 EN50021 DK-7575 10-way d670800e 02ATEX

    ic 710

    Abstract: BD708 equivalent BD712 ic 709 bd710 eb 203 BD709 BD707 bd708 COMPLEMENTARY SILICON POWER TRANSISTORS
    Text: BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709, and BD711 are silicon epitaxial-base NPN power transistors in Jedec


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    PDF BD707/709/711 BD708/710/712 BD707, BD709, BD711 O-220 BD708, BD710, BD712 O-220 ic 710 BD708 equivalent ic 709 bd710 eb 203 BD709 BD707 bd708 COMPLEMENTARY SILICON POWER TRANSISTORS

    BD707

    Abstract: BD711 BD710 BD709 BD708 BD712 ic 709 applications
    Text: BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD707, BD709, and BD711 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in power linear and switching applications.


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    PDF BD707/709/711 BD708/710/712 BD707, BD709, BD711 O-220 BD708, BD710, BD712 O-220 BD707 BD710 BD709 BD708 ic 709 applications

    ic 709

    Abstract: BD708 bd707 application BD707 BD712 BD709 BD711
    Text: BD707/709/711 BD708/712  COMPLEMENTARY SILICON POWER TRANSISTORS • COMPLEMENTARY PNP - NPN DEVICES APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec


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    PDF BD707/709/711 BD708/712 BD707, BD709 BD711 O-220 BD707 BD708 BD712 ic 709 bd707 application

    BD707

    Abstract: No abstract text available
    Text: BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS • COMPLEMENTARY PNP - NPN DEVICES APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec


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    PDF BD707/709/711 BD708/712 BD707, BD709 BD711 O-220 BD707 BD708 BD712

    BD707

    Abstract: BD708 BD711 BD709 BD712
    Text: BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS • COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec


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    PDF BD707/709/711 BD708/712 BD707, BD709 BD711 O-220 BD707 BD708 BD712

    bd708

    Abstract: BD707
    Text: BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS • COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ s ct DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec


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    PDF BD707/709/711 BD708/712 BD707, BD709 BD711 O-220 BD707 BD708 BD712

    b708

    Abstract: A 708 transistor
    Text: KSB707/708 KSB707/708 Low Frequency Power Amplifier • Low Speed Switching • Industrial Use • Complement to KSD568/569 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


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    PDF KSB707/708 KSD568/569 O-220 PW300 Cycle10% b708 A 708 transistor

    A 708 transistor

    Abstract: No abstract text available
    Text: KSD568/569 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB707/708 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit VcEO 100 V VcEC V VcEO 60 80 V ebo 7 V lc 7 A lc 15 A Base Current


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    PDF KSD568/569 KSB707/708 KSD568 KSD569 300/is, A 708 transistor

    DM706A

    Abstract: tic 706a ADM705 ADM707
    Text: ► ANALOG DEVICES Low Cost |iP Supervisory Circuits ADM705ADM708 FEATURES Guaranteed RESET Valid w ith V cc 1 V 190 nA Quiescent Current Precision Supply-Voltage M onitor +4.65 V A DM 705/A DM 707 +4.40 V (A DM 706/A DM 708) _ 200 ms Reset Pulse W idth


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    PDF ADM705-- ADM708 705/A 706/A 707/A 705-M 705-ADM DM706A tic 706a ADM705 ADM707

    coelec

    Abstract: No abstract text available
    Text: KSD568/569 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSB707/708 ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Sym bol R a tin g U n it C ollector-Base Voltage VcEO 100 V C ollector-E m itter Voltage : KSD 568


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    PDF KSD568/569 KSB707/708 KSD569 coelec

    M706

    Abstract: ADM705 ADM707
    Text: ANALOG DEVICES FEATURES _ Guaranteed RESET Valid w ith V cc = 1 V 190 |xA Quiescent Current Precision Supply-Voltage M onitor +4.65 V A D M 705/A D M 707 +4.40 V (A D M 706/A D M 708) 200 ms Reset Pulse W idth _ Debounced TTL/CM O S Manual Reset Input (MR)


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    PDF 705/A 706/A 707/A 705-M ADM705â M706 ADM705 ADM707

    M705

    Abstract: ADM705 ADM707
    Text: ANALOG DEVICES Low Cost |xP Supervisory Circuits ADM705ADM708 FEATURES _ Guaranteed RESET Valid w ith V cc = 1 V 190 |xA Quiescent Current Precision Supply-Voltage M onitor +4.65 V A D M 705/A D M 707 +4.40 V (A D M 706/A D M 708) 200 ms Reset Pulse W idth


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    PDF 705/A 706/A 707/A 705-M ADM705--ADM708 M705 ADM705 ADM707

    3055 5C pnp transistor

    Abstract: n3055 2222 NPN 3055 pnp 3055 npn 3055 5c pnp N 2222 N2222 N2905 2N2218
    Text: Switching transistors Continued Maximum ratings Characteristics ' t o t at 'c UC E O A V ^C E sat at V A *FE at / c and ^C E mA V 'o n ns CO (amb = + 4 W s Structure Fig. Nr. 5 Group Type 1q and 7B1: ; B2 mA mA mA 3; 1 2 N 708 NPN 9 0.32 0.2 15 S 0 .4


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    PDF 2N2218 2N2219 3B2DIN41872 3055 5C pnp transistor n3055 2222 NPN 3055 pnp 3055 npn 3055 5c pnp N 2222 N2222 N2905

    B708

    Abstract: A 708 transistor B707 PNP EPITAXIAL SILICON TRANSISTOR 5A
    Text: KSB707/708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE • C o m p le m e n t to K S D 5 6 8 /5 6 9 A BSOLUTE M AXIMUM RATINGS C haracteristic Sym bol Rating Unit C o lle c to r-B a s e V o lta g e V cB O


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    PDF KSB707/708 KSD568/569 300ns, O-220 300-SOO- B708 A 708 transistor B707 PNP EPITAXIAL SILICON TRANSISTOR 5A

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    sa 708

    Abstract: BD707
    Text: BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS . COMPLEMENTARY PNP - NPN DEVICES APPLICATION . LINEARAND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for


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    PDF BD707/709/711 BD708/712 BD707, BD709 BD711 O-220 BD707 BD708 BD712 sa 708

    b0711

    Abstract: B0707 B0709 BD710 BD712 le 708 BD709 BD707
    Text: fZ 7 SCS-THOMSON ^ 7 # raoeiis&ieim *® BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES APPLICATION . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709, and BD711 are silicon


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    PDF BD707/709/711 BD708/710/712 BD707, BD709, BD711 O-220 BD708, BD710, BD712 O-220 b0711 B0707 B0709 BD710 le 708 BD709 BD707

    BD709

    Abstract: SC06960 BD707 BD708 BD712 BD710 BD711
    Text: / I T S C S -n iO M S O N Ä T # [MO gfô l[L[iera®*S BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS . . SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATION . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION


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    PDF BD707/709/711 BD708/710/712 BD707, BD709, BD711 O-220 BD708, BD710, BD712 SC06960 BD709 BD707 BD708 BD710

    d705

    Abstract: BD706 TRANSISTORE BD705 BD707 BD708 BD709 BD710 BD711 BD712
    Text: • 7 ^ 2 3 7 0Q5ÛH25 SGS-THOMSON ^D^@g[Lg g¥il(ô ia i S G 3 _ BD705/706/707/708 BD709/710/711 /712 S-THOMSON 3ÜE D POWER LINEAR AND SWITCHING APPLICATIONS DESC RIPTIO N The BD705, BD707, BD709 and BD711 are silicon epitaxial-base NPN power transistore in Jedec TO220 plastic package intended for use in power linear


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    PDF 7c12tà D705/706/707/708 BD709/710/7117712 BD705, BD707, BD709 BD711 O-220 BD706, BD708, d705 BD706 TRANSISTORE BD705 BD707 BD708 BD710 BD712