CY8C27443-24PXI
Abstract: MODULATOR DSM sample project of digital signal processing IOT02 analog Isolator analog multiplier low voltage analog multiplier Single-Bit ADCs in a Nutshell
Text: Signals-From-Noise Single-Bit ADCs in a Nutshell - Part III by Dave Van Ess, Principal Application Engineer, Cypress Semiconductor In our last installment http://www.analogZONE.com/iot_0205.htm we explored how to build delta-sigma modulators, handy little devices that convert an analog input into
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AN1153
Abstract: ADSP-2185N
Text: DSM2180F3V DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (3.3 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ■ 128K Byte Flash Memory
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DSM2180F3V
ADSP-218X
AN1153
ADSP-2185N
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Untitled
Abstract: No abstract text available
Text: DSM2180F3 DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (5 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ■ 128K Byte Flash Memory
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DSM2180F3
ADSP-218X
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simple ladder motor diagram
Abstract: Different types of PWM techniques DCPWM 1024R advantages of digital pulse counter nuts CY8C27443 One of the simplest ways to generate a duty cycle is to use a PWM Dave Van Ess
Text: Single Bit DACs in a Nutshell Part I – DAC Basics By Dave Van Ess, Principal Application Engineer, Cypress Semiconductor Many embedded applications require generating analog outputs under digital control. It may be a DC reference voltage or an AC signal to stimulate transducers. It may be a reconstructed voice signal for some
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an1171
Abstract: adsp 2186 instruction set transistor 13003 AD11 AD12 AD14 ADSP-218X DSM2180F3 PLCC52 PQFP52
Text: DSM2180F3 DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (5 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ■ 128K Byte Flash Memory
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DSM2180F3
ADSP-218X
PQFP52
an1171
adsp 2186 instruction set
transistor 13003
AD11
AD12
AD14
DSM2180F3
PLCC52
PQFP52
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CHN 510
Abstract: CHN 530 vdf displays an1171 PQFP52 PLD 5 AD11 AD12 AD14 ADSP-218X
Text: DSM2180F3V DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (3.3 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP 128K Byte Flash Memory
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DSM2180F3V
ADSP-218X
PQFP52
CHN 510
CHN 530
vdf displays
an1171
PQFP52
PLD 5
AD11
AD12
AD14
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Untitled
Abstract: No abstract text available
Text: DSM2180F3 DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (5 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ) s ( t c u d o s) r
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DSM2180F3
ADSP-218X
PQFP52
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k941
Abstract: k 941 CMGS nec asic product letter sequential CIRCUIT nec ddr nec cb cell product letter
Text: ISSP/150 nm ASIC Technology ISSP1 - Standard Family Product Letter Description NEC‘s Instant Silicon Solution Platform ISSP is an ASIC architecture, that offers high system performance – up to 150 MHz system frequency and up to 250 MHz for local areas – in 0.13 µm (drawn) gate length technology at low NRE. ISSP
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ISSP/150
lines5030
A16448EE5V0PL00
k941
k 941
CMGS
nec asic product letter
sequential CIRCUIT
nec ddr
nec cb cell product letter
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h13f
Abstract: AN1153
Text: DSM2180F3V DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (3.3 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ) s ( t c u d o s)
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DSM2180F3V
ADSP-218X
PQFP52
h13f
AN1153
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TSMC 40nm
Abstract: TSMC 40nm layout issue cascode transistor array 90 nm CMOS Double high-speed switching diode EP4SE530 90-nm-FPGAs transistor gds
Text: Process-Design Co-Optimization for FPGA Qi Xiang Altera Corporation, 101 Innovation Drive, San Jose, CA 95134 Email: qxiang@altera.com Abstract Advancing field programmable gate array FPGA technology can be very challenging. Some of the major difficulties are power management and high-speed
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40-nm
TSMC 40nm
TSMC 40nm layout issue
cascode transistor array
90 nm CMOS
Double high-speed switching diode
EP4SE530
90-nm-FPGAs
transistor gds
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scr C35
Abstract: 2N683 2N690 2N681-2N692 2N688 2n692 2N681 2N682 FREEPORT 2N684
Text: Semitronics Discrete Semiconductors C35 Series: 2N681-2N692 Description Phase Control SCR 16 Amperes / 25-800 Volts Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control
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2N681-2N692
MIL-PRF-19500/108
scr C35
2N683
2N690
2N681-2N692
2N688
2n692
2N681
2N682
FREEPORT
2N684
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M4200
Abstract: No abstract text available
Text: WESTCODE SEMICONDUCTORS !“ Capsule Phase Control Thyristor Consists of a diffused silicon element mounted in an hermetic ceramic cold welded capsule, and features an amplifying gate. Available in industry standard and thin housings. Ratings ^DRM v DSM
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300mm
0GG272b
N320/4
M4200
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Untitled
Abstract: No abstract text available
Text: r1 MCD40 Thyristor/Diode Module TRMS — •TAVM V RRM — 2x 60 A 2x 38 A 1200-1600 V Preliminary data V RSM V DSM V RRM V DRM V V 1300 1700 1200 1600 / Type A/K G K II SOT-227 B, miniBLOC r I I MCD 40-12io6 MCD 40-16io6 A/K K = Cathode, A = Anode, G = Gate,
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MCD40
OT-227
40-12io6
40-16io6
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tv lg
Abstract: ko 247
Text: DIXYS Phase Control Thyristor CS 45 ITRM S = 75 A TAVM = 48 A V RRM = 800 -1600 V Advanced Data V RSM V DSM V ’ RRM V v DRM V V TO-247 AD Type A° - ^ G 900 1300 1700 800 1200 1600 CS 45-08io1 CS 45-12io1 CS 45-16io1 TAB C = Cathode, A = Anode, G = Gate
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O-247
45-08io1
45-12io1
45-16io1
tv lg
ko 247
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CS458
Abstract: No abstract text available
Text: aixYS CS 45 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V T RMS 75 A T(AV)M 48 A TO-247 AD Type Ao ( ^ l ) o C G 800 1200 1600 900 1300 1700 8 0 0 -1600 V CS 45-08io1 CS 45-12io1 CS 45-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol
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O-247
45-08io1
45-12io1
45-16io1
CS458
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M/LT 2146
Abstract: rsm ah 16
Text: OIXYS CS 45 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V T RMS 75 A T(AV)M 48 A TO-247 AD Type A O -^ T ‘ G 800 1200 1600 900 1300 1700 8 0 0 -1600 V CS 45-08io1 CS 45-12io1 CS 45-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol Test Conditions
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O-247
45-08io1
45-12io1
45-16io1
M/LT 2146
rsm ah 16
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Untitled
Abstract: No abstract text available
Text: a ix Y S CS 30 v RRM IT RMS Phase Control Thyristor T(AV)M V RSM V RRM V DSM V DRM V V 1200 1400 1600 1200 1400 1600 12 0 0 -1600 V 49 A 31 A TO-247 AD Type CS 30-12io1 CS 30-14io1 CS 30-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Maximum Ratings Symbol
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O-247
30-12io1
30-14io1
30-16io1
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pixy
Abstract: No abstract text available
Text: aixY S CS 20 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V 1200 1400 1600 12 0 0 -1600 V T RMS 30 A T(AV)M 19 A TO-247 AD Type Ao ( ^ l ) o C G 1200 1400 1600 CS 20-12io1 CS 20-14io1 CS 20-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Maximum Ratings
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O-247
20-12io1
20-14io1
20-16io1
O-247
pixy
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Untitled
Abstract: No abstract text available
Text: W FLESSE Y Semiconductors. ZN451 3'k DIGIT DVM 1C WITH EXTERNAL AUTO-ZERO The ZN451 is a complete digital voltmeter fabricated on a monolithic chip. A novel charge-balancing conversion technique ensures good linearity. The auto-zero function is completely digital in operation, thus obviating the need for a
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ZN451
ZN451
999mV
ZN451E
ZN451CJ
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Untitled
Abstract: No abstract text available
Text: REVISION E DSM-VT-X-XX-P Q SHELL SIZE/PDSITIDN -E-09 2 .7 7 + 0 .1 5 O O O D \ MOUNTING LACE -Rj! #4-40 Removable Jack Screws JS-03 Requires -TB or -BL -MJl Metric M3 Jack Screw (JS-04 for use with -MB anal -ML) Leave Blank Lor NO MOUNTING LACE OPTION
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-E-09
JS-03
JS-04
TB-01-4.
BL-01-6.
TB-02-4,
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BTW56
Abstract: BTW55 BTW53 3087 BTW52 BTW54 32917B
Text: ITT Semiconductors Thyristors Thyristors 5 Am p- -B T W Range PN PN Type R EFER EN CE T A B L E Outline Drawing No. Code V R WM V rsm V dWM VoSM Stock No. BTW 52 BTW 53 BTW 54 BTW 55 B TW 56 60 100 200 400 600 60 110 220 440 660 60 100 200 400 600 80 120
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BTW52
32917B
BTW53
32918X
BTW54
32919R
BTW55
2920A
BTW56
32921X
3087
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ior e78996
Abstract: IR E78996
Text: INTERNATIONAL RECTIFIER bSE D m INR MÖ55452 DDlbEL.^ T74 Bulletin E27104 International 1»] Rectifier IRFK4H150.IRFK4J150 Isolated Base Power H E X -p ak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.
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E27104
IRFK4H150
IRFK4J150
E78996.
T0-240
ior e78996
IR E78996
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TF561S
Abstract: TF541S
Text: THYRISTORS Electrical Characteristics Absolute M axim um Ratings Repetitive Peak Non-Repetitive Off-State Peak Off-State Voltage Voltage T ,= -40°C to T „ s Rgk= 1k£î Mean On-State Current Surge On-State Current 50Hz Half-Cycle N on-Repetitive 50Hz Sinewave
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TF321S
TF341S
TF361S
TF521S
TF541S
TF561S
TF821S
TF841S
TF541S-A
102-C)
TF541S
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d3000 mosfet
Abstract: analogue ohmmeter circuit diagram ZN490 transistor d3000 d3000 TL091 ZN451 ZN451E d3000 fet ZN451CJ
Text: ZN451E ZN451CJ 3% digit DVM 1C with external auto-zero FEATURES DESCRIPTION • External circuits may be included in the auto-zero loop • Full-scale reading '1.999mV or lower • Measures sum or difference of two inputs • Digital auto-zero with guaranteed zero
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ZN451E
ZN451CJ
999mV
ZN451
ZN451E
ZN451CJ
d3000 mosfet
analogue ohmmeter circuit diagram
ZN490
transistor d3000
d3000
TL091
d3000 fet
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