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    A-6 SMD TRANSISTOR Search Results

    A-6 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A-6 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ELECTROLYTIC CAPACITORS 220uF 25V

    Abstract: OM7580SM
    Text: PD - 94742 Ultra Low Dropout, 7.0 A Adjustable Positive Linear Regulator Surface-Mount SMD-6 OM7580SM 5962 - 0323701MXA Product Summary Part Number Output Voltage Current Dropout OM7580SM +1.8V to +5.5V 7.0A 0.54V SMD-6 Description The OM7580SM is a 7.0A , ultra low dropout, adjustable linear regulator specifically designed for low


    Original     		PDF OM7580SM 0323701MXA OM7580SM 540mV 100mV ELECTROLYTIC CAPACITORS 220uF 25V

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5230PAP DFN2020-6 OT1118) PBSS4230PANP. PBSS4230PAN. AEC-Q101

    transistor smd 6a

    Abstract: smd 1C 2945A m 830 smd Transistor Mosfet N-Ch 30V
    Text: Transistors IC SMD Type 30V Complementary PowerTrench MOSFET KI4542DY Features N-Channel 6 A, 30 V RDS ON = 28m @ VGS = 10V RDS(ON) = 35m @ VGS =4.5V P-Channel -6 A, -30 V RDS(ON) = 32m @ VGS =- 10 V RDS(ON) = 45m @ VGS =-4.5V Absolute Maximum Ratings Ta = 25


    Original     		PDF KI4542DY transistor smd 6a smd 1C 2945A m 830 smd Transistor Mosfet N-Ch 30V

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5160PAP DFN2020-6 OT1118) PBSS4160PANP. PBSS4160PAN. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4130PAN DFN2020-6 OT1118) PBSS4130PANP. PBSS5130PAP. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4160PAN DFN2020-6 OT1118) PBSS4160PANP. PBSS5160PAP. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4160PANP DFN2020-6 OT1118) PBSS4160PAN. PBSS5160PAP. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: PMPB15XP 12 V, single P-channel Trench MOSFET 6 July 2012 Preliminary data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB15XP DFN2020MD-6 OT1220)

    marking code 1f

    Abstract: NXP SMD mosfet MARKING CODE
    Text: PMPB12UN 20 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB12UN DFN2020MD-6 OT1220) marking code 1f NXP SMD mosfet MARKING CODE

    TRANSISTOR SMD MARKING CODE 1P

    Abstract: smd transistor marking 1p smd TRANSISTOR code marking 1P
    Text: PMPB33XN 30 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB33XN DFN2020MD-6 OT1220) TRANSISTOR SMD MARKING CODE 1P smd transistor marking 1p smd TRANSISTOR code marking 1P

    2A 80v complementary transistor

    Abstract: No abstract text available
    Text: SEME 2N3741 SMD LAB MECHANICAL DATA Dimensions in mm MEDIUM POWER PNP SILICON POWER TRANSISTOR 3 .6 0 0 .1 4 2 M a x . • LOW SATURATION VOLTAGE • HIGH GAIN 3 FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1


    Original     		PDF 2N3741 2N3741SMD" 2N3741SMD O276AB) 2A 80v complementary transistor

    2N3741

    Abstract: 2N3741SMD 2N3766SMD
    Text: SEME 2N3741 SMD LAB MECHANICAL DATA Dimensions in mm MEDIUM POWER PNP SILICON POWER TRANSISTOR 3 .6 0 0 .1 4 2 M a x . • LOW SATURATION VOLTAGE • HIGH GAIN 3 FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1


    Original     		PDF 2N3741 100KHz 2N3741SMD 2N3766SMD

    Untitled

    Abstract: No abstract text available
    Text: SEME 2N3741 SMD LAB MECHANICAL DATA Dimensions in mm MEDIUM POWER PNP SILICON POWER TRANSISTOR 3 .6 0 0 .1 4 2 M a x . • LOW SATURATION VOLTAGE • HIGH GAIN 3 FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1


    Original     		PDF 2N3741 100KHz

    Untitled

    Abstract: No abstract text available
    Text: 2N5154XSMD MECHANICAL DATA Dimensions in mm inches 3 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 DESCRIPTION 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD (TO-276AB) The 2N5154XSMD is a silicon expitaxial planar NPN transistors in a Ceramic Surface


    Original     		PDF 2N5154XSMD O-276AB) 2N5154XSMD

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB200EN 100 V N-channel Trench MOSFET 30 May 2013 Objective data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB200EN DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic


    Original     		PDF PMCXB900UE DFN1010B-6 OT1216)

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 2 July 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB20EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB20EN DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 NX2020N2 30 V, N-channel Trench MOSFET 20 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF NX2020N2 DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB11EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB11EN DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC857QAS 45 V, 100 mA PNP/PNP general-purpose transistor 25 July 2014 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847QAS.


    Original     		PDF BC857QAS DFN1010B-6 OT1216) BC847QAS. BC847QAPN. AEC-Q101

    TRANSISTOR SMD MARKING CODE 1v

    Abstract: NXP SMD TRANSISTOR MARKING CODE s1
    Text: PMDPB30XN 20 V, dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB30XN DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE 1v NXP SMD TRANSISTOR MARKING CODE s1

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC847QAPN 45 V, 100 mA NPN/PNP general-purpose transistor 19 July 2013 Product data sheet 1. General description NPN/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits


    Original     		PDF BC847QAPN DFN1010B-6 OT1216) AEC-Q101