Untitled
Abstract: No abstract text available
Text: ESD1P0RF. RF ESD Protection Diodes • ESD / transient protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Ultra low capacitance of 1 pF typ.
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
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PDF
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Untitled
Abstract: No abstract text available
Text: ESD1P0RF. RF ESD Protection Diodes • ESD / transient protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Ultra low capacitance of 1 pF typ.
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Original
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
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PDF
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SOt323 marking code 6X
Abstract: BCR108S BCR108W IEC61000-4-4 marking code INFINEON MARKING CODE 2I ESD1P0RFW
Text: ESD1P0RF. RF ESD Protection Diodes • ESD / transient protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Ultra low capacitance of 1 pF typ.
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Original
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
SOt323 marking code 6X
BCR108S
BCR108W
IEC61000-4-4
marking code INFINEON
MARKING CODE 2I
ESD1P0RFW
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PDF
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BCR108S
Abstract: BCR108W IEC61000-4-4 SOt323 marking code 6X
Text: ESD1P0RF. RF ESD Protection Diodes • ESD / transient protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Ultra low capacitance of 1 pF typ.
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Original
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
BCR108S
BCR108W
IEC61000-4-4
SOt323 marking code 6X
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PDF
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si1428
Abstract: No abstract text available
Text: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si1428EDH
2002/95/EC
OT-363
SC-70
Si1428EDH-T1-GE3
11-Mar-11
si1428
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PDF
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sot363 marking DATE code
Abstract: BCR108S IEC61000-4-4 ESD5V0S5US-E6727 ESD5V0S5US
Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)
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Original
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
E6727
sot363 marking DATE code
BCR108S
IEC61000-4-4
ESD5V0S5US-E6727
ESD5V0S5US
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PDF
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Untitled
Abstract: No abstract text available
Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (Lighting): 6 A (8/20 µs) • Max. working voltage: 5 V (5.3 V max.)
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Original
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
OT363
OT363
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si1428EDH
2002/95/EC
OT-363
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Si1401
Abstract: SI1401EDH-T1-GE3 si1401e
Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21
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Original
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Si1401EDH
2002/95/EC
OT-363
SC-70
Si1401EDH-T1-GE3
18-Jul-08
Si1401
si1401e
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PDF
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ESD5V0S5US-E6727
Abstract: No abstract text available
Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)
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Original
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
E6727
E6727*
ESD5V0S5US-E6727
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21
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Original
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Si1401EDH
2002/95/EC
OT-363
SC-70
Si1401EDH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21
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Original
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Si1401EDH
2002/95/EC
OT-363
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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si1401e
Abstract: 70080
Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21
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Original
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Si1401EDH
2002/95/EC
OT-363
SC-70
Si1401EDH-T1-GE3
11-Mar-11
si1401e
70080
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PDF
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sot363 marking DATE code
Abstract: BCR108S IEC61000-4-4 MARKING E4S
Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (Lighting): 6 A (8/20 µs) • Max. working voltage: 5 V (5.3 V max.)
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Original
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
OT363
sot363 marking DATE code
BCR108S
IEC61000-4-4
MARKING E4S
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)
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Original
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
E6727*
OT363
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21
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Original
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Si1401EDH
2002/95/EC
OT-363
SC-70
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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MARKING d5 SOT363
Abstract: No abstract text available
Text: SEMICONDUCTOR PF0224US6 TECHNICAL DATA EMI Filtering TVS APPLICATION EMI Filter and line termination for USB upstream ports on. USB Hubs B B1 PC peripherals 1 6 2 5 3 4 DIM A A1 B A C EMI/RFI filtering. A1 C FEATURES ESD Protection to IEC 61000-4-2 Level 4.
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PF0224US6
MARKING d5 SOT363
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PDF
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PF0314US6
Abstract: MARKING d5 SOT363
Text: SEMICONDUCTOR PF0314US6 TECHNICAL DATA EMI Filtering TVS APPLICATION EMI Filter and line termination for USB upstream ports on. USB Hubs B B1 PC peripherals 1 6 2 5 3 4 DIM A A1 B A C EMI/RFI filtering. A1 C FEATURES ESD Protection to IEC 61000-4-2 Level 4.
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Original
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PF0314US6
PF0314US6
MARKING d5 SOT363
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si1441EDH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.041 at VGS = - 4.5 V -4 0.054 at VGS = - 2.5 V -4 0.100 at VGS = - 1.8 V -4 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si1441EDH
2002/95/EC
OT-363
SC-70
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si1441EDH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.041 at VGS = - 4.5 V -4 0.054 at VGS = - 2.5 V -4 0.100 at VGS = - 1.8 V -4 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si1441EDH
2002/95/EC
OT-363
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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CMKTVS5-4
Abstract: No abstract text available
Text: CMKTVS5-4 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON LOW CAPACITANCE QUAD TVS/DIODE ARRAY DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKTVS5-4 is a 4-line TVS/Diode array packaged in an ULTRAminiTM surface mount case. With its low capacitance, this
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Original
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OT-363
IEC6100Reverse
8x20s
CMKTVS5-4
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1414DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization:
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Original
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Si1414DH
OT-363
SC-70
Si1414DH-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: £ £ N £ H K F R E E S C A L E SEMICONDUCTOR, A L L R IG H T S RESERVED. INC. MECHANICAL TITLE' OUTLINE DOCUMENT SOT363, 6LD, 0.65MM DITCH CASE PRINT NO' 9 8 A S B 4 2 9 8 5 B NUMBER' 4 1 9 B -0 1 STANBARB VERSIEN NUN-UEBEC NET TE SCALE REV' J 24 MAY
|
OCR Scan
|
OT363,
98asb42985b
419B-01
5m-1994.
OTH63,
9sasd42985d
|
PDF
|
CE121
Abstract: No abstract text available
Text: Thal H E W L E T T m iftM P A C K A R D 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Featu res • Ultra-M iniature Package • Internally Biased, Single +5 V Supply 1 4 mA • 1.6 dB Noise Figure a t 2 .4 GHz • 2 1 .8 dB Gain a t 2 .4 GHz
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OCR Scan
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MGA-86563
OT-363
MGA-86563
OT-363
OT-143.
0D1643T
CE121
|
PDF
|
