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    A02 SOT23 Search Results

    A02 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    A02 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A09 N03 MOSFET

    Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
    Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04


    Original     		AD1580-A AD1580-B AD1582-A AD1582-B AD1582-C AD1583-A AD1583-B AD1583-C AD1584-A AD1584-B A09 N03 MOSFET marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23 PDF

    via VT8237A

    Abstract: K8N890 bq24721 VT6103L IT8512E-L vt1634 vt8237 Inventec npn transistor w16 w25 transistor smd
    Text: 5 4 3 2 1 Inventec Corporation R&D Division D D C C Board name : Mother Board Schematic Project : E25 Version : A02 MV Build Initial Date : Jan 1 , 2006 B B A A Inventec Corporation 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan


    Original     		K8N890 CN1001 60mils G5240B1T1U 6019B0252801 U1003 3703-F12N-03R 6012B0111303 6019B0252801 via VT8237A bq24721 VT6103L IT8512E-L vt1634 vt8237 Inventec npn transistor w16 w25 transistor smd PDF

    sil1364

    Abstract: Sil1364A Inventec PZ4782K fds8884 foxconn IT8305E IT8512F ITE8512F 3702-F03C-02R
    Text: 5 4 3 2 1 D D Inventec Corporation R&D Division Board name : Mother Board Schematic C Project : M11D Santa Rosa Version : A02 C Initial Date : July 30 , 2007 Approval By : Eric Yang Check By : Ben Lee B B A A Inventec Corporation <OrgAddr4> Inventec Buliding,66 Hou-Kang Stree


    Original     		CN1201 87213-0200G 6012B0069901 FIX1201 FIX1202 FIX1203 FIX1204 FIX1205 FIX1206 FIX1207 sil1364 Sil1364A Inventec PZ4782K fds8884 foxconn IT8305E IT8512F ITE8512F 3702-F03C-02R PDF

    IT8512E-L

    Abstract: ITE 8512 w25x80vssig bq24721 Inventec 28c43 KBC-ITE-8512 G5240B1T1U PZ6382A-284S-41F transistor C547 npn
    Text: 5 4 3 2 1 Inventec Corporation R&D Division D D C C Board name : Mother Board Schematic Project : E25 Version : A02 MV Build Initial Date : Jan 1 , 2006 B B A A Inventec Corporation <OrgAddr4> 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan


    Original     		K8N890 U1002 CN1001 60mils G5240B1T1U 6019B0252801 U1003 3703-F12N-03R 6012B0111303 IT8512E-L ITE 8512 w25x80vssig bq24721 Inventec 28c43 KBC-ITE-8512 PZ6382A-284S-41F transistor C547 npn PDF

    LA-1901

    Abstract: EPCOS R800 rg82855 rg82855pm LR431 c2t225 dell 90W ac adapter schematic SN7002 ddq12 1203P1
    Text: 5 4 3 2 1 D D LKB-ADDs, Plus Schematic REV : A02 C C @ 1@ 2@ 3@ 4@ : : : : : Depop Component for All Pop Component for Lindbergh Series Pop Component for Kapalua series Depop Component for Lindbergh Plus series Pop Component for Lindbergh Plus series B B DDQ12/LA1901 Schematic with Capture CIS and Function field


    Original     		DDQ12/LA1901 DDQ12/11/01 LA-1901 ADM1032 PL120 PL126 LA-1901 EPCOS R800 rg82855 rg82855pm LR431 c2t225 dell 90W ac adapter schematic SN7002 ddq12 1203P1 PDF

    A194-FH

    Abstract: A194FH marking A03 AOZ8005CI 84-3J semiconductor body marking marking A02 a194 IEC-61000-4-2 ESD test plan
    Text: AOS Semiconductor Product Reliability Report AOZ8005CI, rev 1 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 26, 2007 1 This AOS product reliability report summarizes the qualification result for AOZ8005CI.


    Original     		AOZ8005CI, AOZ8005CI. AOZ8005CI F162T FN646 AC003 IEC-61000-4-2, JESD78A A194-FH A194FH marking A03 84-3J semiconductor body marking marking A02 a194 IEC-61000-4-2 ESD test plan PDF

    ablebond 8006ns

    Abstract: CEL9220HF13 cel-9220HF AOZ8000HI marking A03 cel-9220 22A108-B CEL9220 22-A108-B A108-B
    Text: AOS Semiconductor Product Reliability Report AOZ8000HI, rev 1 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 26, 2007 1 This AOS product reliability report summarizes the qualification result for AOZ8000HI.


    Original     		AOZ8000HI, AOZ8000HI. AOZ8000HI AB008) IEC-61000-4-2, JESD78A -105D ablebond 8006ns CEL9220HF13 cel-9220HF marking A03 cel-9220 22A108-B CEL9220 22-A108-B A108-B PDF

    ITE8502E-L

    Abstract: ITE8502E TPS51610 RTL8111CP IT8502E G5693 tps51125 ITE8502F circuit diagram of usb webcam ISL6251
    Text: 5 4 3 2 1 THIS DRAWING AND SPECIFICATIONS, HEREIN, ARE THE PROPERTY OF INVENTEC CORPORATION AND SHALL NOT BE REPODUCED, COPIED, OR USED IN WHOLE OR IN PART AS THE BASIS FOR THE MANUFACTURE OR SALE OF ITEMS WITHOUT WRITTEN PERMISSION, INVENTEC CORPORATION, 2009 ALL RIGHT RESERVED.


    Original     		BAP41/BAP51/BAP52/BXP41/SJM52 BAP41/BAP51 D-CS-1310A2292001-ALG R1001 -1/16W-0402 R1002 -1/16W-0402 CN1001 CLK32 6012B0243402 ITE8502E-L ITE8502E TPS51610 RTL8111CP IT8502E G5693 tps51125 ITE8502F circuit diagram of usb webcam ISL6251 PDF

    Untitled

    Abstract: No abstract text available
    Text: PPJA3402 30V N-Channel Enhancement Mode MOSFET Voltage 30 V SOT-23 4.4A Current Unit: inch mm Features  RDS(ON) , VGS@10V, ID@4.4A<48mΩ  RDS(ON) , VGS@4.5V, ID@3.6A<53mΩ  RDS(ON) , VGS@2.5V, ID@2.5A<66mΩ  RDS(ON) , VGS@1.8V, ID@1.5A<92mΩ


    Original     		PPJA3402 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV PDF

    BAT54A

    Abstract: BAT-54A marking code L4p
    Text: 3.0 2.8 0.1 0.05 0.02 MIN 2.6 2.2 1.4 1.2 2.0 1.8 Small Signal Schottky Barrier Rectifiers 0.13 0.03 0.08 TYP 0.15 0.080 1.15 0.9 0.41 0.35 BAT54/A/C/S 0.6 0.3 PRIMARY CHARACTERISTICS SOT-23 Dimensions in inches and millimeters IF 0.2A VRRM 30V IFSM 1A VF


    Original     		BAT54/A/C/S OT-23 2002/95/EC OT-23 MIL-STD-202, 10uAdc) 10mAdc 30mAdc BAT54 L4P/L42/L43/L44 BAT54A BAT-54A marking code L4p PDF

    KL31

    Abstract: BAV23C KT712
    Text: BAV23A/C/S Small Signal Switching Diodes .120 3.04 .110(2.80) .103(2.60) .086(2.20) .056(1.4) .047(1.2) 3 .008(.20) .003(.08) .006(0.15)Min 1 .080(2.04) .070(1.78) .044(1.11) .035(0.89) .020(.50) .013(.35) 2 .004 (0.1) MAX SOT-23 Dimensions in inches and (millimeters)


    Original     		BAV23A/C/S OT-23 BAV23C BAV23A BAV23S 100mA 100us 200mA KL31 KT712 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAW56/BAV70/BAV99/BAL99 Small Signal Switching Diodes .119 3.0 .110(2.8) .103(2.6) .086(2.2) .056(1.4) .047(1.2) .007(.17) .002(.05) .007(.20)MIN .083(2.1) .066(1.7) .044(1.1) .035(0.9) .020(.50) .013(.35) .006(.15)MAX PRIMARY CHARACTERISTICS SOT-23 Dimensions in inches and (millimeters)


    Original     		BAW56/BAV70/BAV99/BAL99 OT-23 250mW BAV70 BAW56 BAV99 BAL99 OT-23, MIL-STD-202, PDF

    Sis 968

    Abstract: m21 sot23 transistor BBBCR2032BX sis968 KBC-ITE-8512 transistor m21 sot23 LG-2413S-1 SIS762 G784P81U nec c1106
    Text: 5 4 3 2 1 D D Inventec Corporation R&D Division C C CONFIDENTIAL B B Board name : Mother Board Schematic A A Project : xxxx FSC_v5535 Version : 01 Inventec Corporation <OrgAddr4> 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan


    Original     		v5535) S1002 C1002 SW1001 6026B0057602 1BT002-0121L SW1002 C1003 Sis 968 m21 sot23 transistor BBBCR2032BX sis968 KBC-ITE-8512 transistor m21 sot23 LG-2413S-1 SIS762 G784P81U nec c1106 PDF

    88910-5204m

    Abstract: ISL6251 AU-6433 AU6433B52-GBL-GR LTT-SS801U-13 AM4825P LG-2413S-2 apl3510a CN901 CN602
    Text: 5 4 3 2 1 D D ACER_BAP41/BXP41 C C CARD READER BOARD 2009.06.30 B B A A EE DRAWER DESIGN CHECK RESPONSIBLE SIZE= FILE NAME: XXXX-XXXXXX-XX P/N XXXXXXXXXXXX 5 4 3 2 DATE POWER DATE INVENTEC D-CS-1310A2271201-ALG TITLE BAP41/BXP41 Card Reader/B VER: CODE SIZE


    Original     		BAP41/BXP41 D-CS-1310A2271201-ALG BAP41/BXP41 CN302 6012B0073301 FIX202 FIX201 FIX206 FIX204 FIX203 88910-5204m ISL6251 AU-6433 AU6433B52-GBL-GR LTT-SS801U-13 AM4825P LG-2413S-2 apl3510a CN901 CN602 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS40/A/C/S .119 3.0 .110(2.8) Small Signal Schottky Barrier Rectifiers .100(2.55) .089(2.25) .056(1.4) .047(1.2) .006(.15) .003(.08) .020(0.5) .012(0.3) .079(2.0) .071(1.8) .044(1.1) .035(0.9) .020(.50) .012(.30) .004 (0.1) MAX PRIMARY CHARACTERISTICS SOT-23


    Original     		BAS40/A/C/S OT-23 200mA BAS40C BAS40A BAS40S BAS40 OT-23 MIL-STD-202, PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS70/A/C/S .119 3.0 .110(2.8) Small Signal Schottky Barrier Rectifiers .100(2.55) .089(2.25) .056(1.4) .047(1.2) .006(.15) .003(.08) .020(0.5) .012(0.3) .079(2.0) .071(1.8) .044(1.1) .035(0.9) .020(.50) .012(.30) .004 (0.1) MAX PRIMARY CHARACTERISTICS SOT-23


    Original     		BAS70/A/C/S OT-23 BAS70C BAS70A BAS70S BAS70 OT-23 MIL-STD-202, PDF

    datasheet j201 jfet

    Abstract: A04g 2N4338 J201 equivalent J201 N-channel JFET marking A04 J201 J204 SST201 SST202
    Text: N-Channel JFET General Purpose Amplifier CORPORATION J201 – J204 / SST201 – SST204 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V


    Original     		SST201 SST204 -55oC 150oC 135oC 10sec) 300oC 360mW datasheet j201 jfet A04g 2N4338 J201 equivalent J201 N-channel JFET marking A04 J201 J204 SST201 SST202 PDF

    SST201

    Abstract: J201 equivalent A04g datasheet j201 jfet marking A04 sst204 2N4338 J201 J204 SST202
    Text: N-Channel JFET General Purpose Amplifier LLC J201 – J204 / SST201 – SST204 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V


    Original     		SST201 SST204 -55oC 150oC 135oC 10sec) 300oC 360mW OT-23 SST201 J201 equivalent A04g datasheet j201 jfet marking A04 sst204 2N4338 J201 J204 SST202 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel JFET General Purpose Amplifier LLC J201 – J204 / SST201 – SST204 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V


    Original     		SST201 SST204 -55oC 150oC 135oC 10sec) 300oC 360mW DS041 PDF

    A115-A

    Abstract: C101 SN74AHC1G02 SN74AHC1G02DBVR SN74AHC1G02DBVT
    Text: SN74AHC1G02 SINGLE 2-INPUT POSITIVE-NOR GATE SCLS342I – APRIL 1996 – REVISED JANUARY 2003 D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 2 V to 5.5 V Max tpd of 6.5 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V


    Original     		SN74AHC1G02 SCLS342I 000-V A114-A) A115-A) SN74AHC1G02DCKR SC-70) A115-A C101 SN74AHC1G02 SN74AHC1G02DBVR SN74AHC1G02DBVT PDF

    Untitled

    Abstract: No abstract text available
    Text: P & 2SA812S SEMICONDUCTOR FORW ARD INTERNATIONAL B L B C IR O H R S LTD. T EC H N IC A L DATA PNP EPITAXIAL SILICON TRANSISTOR L O W FR E Q U E N C Y A M PL IFIE R Package: SOT-23 * Complement to2SC1623S * Collector-Base Voltage: Vcbo—60V * Excellent Hfe linearity.


    OCR Scan     		2SA812S OT-23 to2SC1623S b-25V 062ii 300uS, -100uA -100mA -10mA PDF

    J201 equivalent

    Abstract: No abstract text available
    Text: N-ChannelJFET General Purpose Amplifier calocft CO RP O R A TIO N \J J201 J204/SST201 SST204 - - FEATURES ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise specified • High Input Impedance • Low I g s s Gate-Source or Gate-Drain Voltage .-40V


    OCR Scan     		J204/SST201 SST204 360mW J201 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: r n l A /i i / 1 WUIOOIC N-Channel JFET General Purpose Amplifier CORPORATION J201 - J204/SST201 - SST204 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • High Input Impedance • Low I g s s Gate-Source or Gate-Drain Voltage . -40V


    OCR Scan     		J204/SST201 SST204 360mW PDF

    S498

    Abstract: BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components
    Text: <IENENS AKTIEN6ESELLSCHAF 03E D • 023SbOS 001Sb37 4 BISIE6 T^£7~2S' Kleinsignaltransistoren Small-Signal Transistors N-Kanal Anreicherungstypen N channel enhancem ent types K S max) V ti(max) rriA ft P,ot mW G ehäuse P ackage SBS SCS Bestellnummer Ordering co d e


    OCR Scan     		023SbOS lSb37 Q62702- BSS981' BSS1381Â OT-23 BSS3951Â O-202 BSS100 BSS123 S498 BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components PDF