A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04
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AD1580-A
AD1580-B
AD1582-A
AD1582-B
AD1582-C
AD1583-A
AD1583-B
AD1583-C
AD1584-A
AD1584-B
A09 N03 MOSFET
marking B3A sot23-5
t7G SOT23-6
marking H2A sot-23
ADM2004
marking moy sot-23
A06 N03 MOSFET
SOT23-5 D2Q
M05 SOT-23
M2A MARKING SOT-23
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via VT8237A
Abstract: K8N890 bq24721 VT6103L IT8512E-L vt1634 vt8237 Inventec npn transistor w16 w25 transistor smd
Text: 5 4 3 2 1 Inventec Corporation R&D Division D D C C Board name : Mother Board Schematic Project : E25 Version : A02 MV Build Initial Date : Jan 1 , 2006 B B A A Inventec Corporation 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan
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K8N890
CN1001
60mils
G5240B1T1U
6019B0252801
U1003
3703-F12N-03R
6012B0111303
6019B0252801
via VT8237A
bq24721
VT6103L
IT8512E-L
vt1634
vt8237
Inventec
npn transistor w16
w25 transistor smd
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sil1364
Abstract: Sil1364A Inventec PZ4782K fds8884 foxconn IT8305E IT8512F ITE8512F 3702-F03C-02R
Text: 5 4 3 2 1 D D Inventec Corporation R&D Division Board name : Mother Board Schematic C Project : M11D Santa Rosa Version : A02 C Initial Date : July 30 , 2007 Approval By : Eric Yang Check By : Ben Lee B B A A Inventec Corporation <OrgAddr4> Inventec Buliding,66 Hou-Kang Stree
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CN1201
87213-0200G
6012B0069901
FIX1201
FIX1202
FIX1203
FIX1204
FIX1205
FIX1206
FIX1207
sil1364
Sil1364A
Inventec
PZ4782K
fds8884
foxconn
IT8305E
IT8512F
ITE8512F
3702-F03C-02R
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IT8512E-L
Abstract: ITE 8512 w25x80vssig bq24721 Inventec 28c43 KBC-ITE-8512 G5240B1T1U PZ6382A-284S-41F transistor C547 npn
Text: 5 4 3 2 1 Inventec Corporation R&D Division D D C C Board name : Mother Board Schematic Project : E25 Version : A02 MV Build Initial Date : Jan 1 , 2006 B B A A Inventec Corporation <OrgAddr4> 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan
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K8N890
U1002
CN1001
60mils
G5240B1T1U
6019B0252801
U1003
3703-F12N-03R
6012B0111303
IT8512E-L
ITE 8512
w25x80vssig
bq24721
Inventec
28c43
KBC-ITE-8512
PZ6382A-284S-41F
transistor C547 npn
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LA-1901
Abstract: EPCOS R800 rg82855 rg82855pm LR431 c2t225 dell 90W ac adapter schematic SN7002 ddq12 1203P1
Text: 5 4 3 2 1 D D LKB-ADDs, Plus Schematic REV : A02 C C @ 1@ 2@ 3@ 4@ : : : : : Depop Component for All Pop Component for Lindbergh Series Pop Component for Kapalua series Depop Component for Lindbergh Plus series Pop Component for Lindbergh Plus series B B DDQ12/LA1901 Schematic with Capture CIS and Function field
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DDQ12/LA1901
DDQ12/11/01
LA-1901
ADM1032
PL120
PL126
LA-1901
EPCOS R800
rg82855
rg82855pm
LR431
c2t225
dell 90W ac adapter schematic
SN7002
ddq12
1203P1
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A194-FH
Abstract: A194FH marking A03 AOZ8005CI 84-3J semiconductor body marking marking A02 a194 IEC-61000-4-2 ESD test plan
Text: AOS Semiconductor Product Reliability Report AOZ8005CI, rev 1 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 26, 2007 1 This AOS product reliability report summarizes the qualification result for AOZ8005CI.
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AOZ8005CI,
AOZ8005CI.
AOZ8005CI
F162T
FN646
AC003
IEC-61000-4-2,
JESD78A
A194-FH
A194FH
marking A03
84-3J
semiconductor body marking
marking A02
a194
IEC-61000-4-2
ESD test plan
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ablebond 8006ns
Abstract: CEL9220HF13 cel-9220HF AOZ8000HI marking A03 cel-9220 22A108-B CEL9220 22-A108-B A108-B
Text: AOS Semiconductor Product Reliability Report AOZ8000HI, rev 1 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 26, 2007 1 This AOS product reliability report summarizes the qualification result for AOZ8000HI.
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AOZ8000HI,
AOZ8000HI.
AOZ8000HI
AB008)
IEC-61000-4-2,
JESD78A
-105D
ablebond 8006ns
CEL9220HF13
cel-9220HF
marking A03
cel-9220
22A108-B
CEL9220
22-A108-B
A108-B
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ITE8502E-L
Abstract: ITE8502E TPS51610 RTL8111CP IT8502E G5693 tps51125 ITE8502F circuit diagram of usb webcam ISL6251
Text: 5 4 3 2 1 THIS DRAWING AND SPECIFICATIONS, HEREIN, ARE THE PROPERTY OF INVENTEC CORPORATION AND SHALL NOT BE REPODUCED, COPIED, OR USED IN WHOLE OR IN PART AS THE BASIS FOR THE MANUFACTURE OR SALE OF ITEMS WITHOUT WRITTEN PERMISSION, INVENTEC CORPORATION, 2009 ALL RIGHT RESERVED.
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BAP41/BAP51/BAP52/BXP41/SJM52
BAP41/BAP51
D-CS-1310A2292001-ALG
R1001
-1/16W-0402
R1002
-1/16W-0402
CN1001
CLK32
6012B0243402
ITE8502E-L
ITE8502E
TPS51610
RTL8111CP
IT8502E
G5693
tps51125
ITE8502F
circuit diagram of usb webcam
ISL6251
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Untitled
Abstract: No abstract text available
Text: PPJA3402 30V N-Channel Enhancement Mode MOSFET Voltage 30 V SOT-23 4.4A Current Unit: inch mm Features RDS(ON) , VGS@10V, ID@4.4A<48mΩ RDS(ON) , VGS@4.5V, ID@3.6A<53mΩ RDS(ON) , VGS@2.5V, ID@2.5A<66mΩ RDS(ON) , VGS@1.8V, ID@1.5A<92mΩ
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PPJA3402
OT-23
2011/65/EU
IEC61249
OT-23
MIL-STD-750,
2014-REV
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BAT54A
Abstract: BAT-54A marking code L4p
Text: 3.0 2.8 0.1 0.05 0.02 MIN 2.6 2.2 1.4 1.2 2.0 1.8 Small Signal Schottky Barrier Rectifiers 0.13 0.03 0.08 TYP 0.15 0.080 1.15 0.9 0.41 0.35 BAT54/A/C/S 0.6 0.3 PRIMARY CHARACTERISTICS SOT-23 Dimensions in inches and millimeters IF 0.2A VRRM 30V IFSM 1A VF
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BAT54/A/C/S
OT-23
2002/95/EC
OT-23
MIL-STD-202,
10uAdc)
10mAdc
30mAdc
BAT54
L4P/L42/L43/L44
BAT54A
BAT-54A
marking code L4p
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KL31
Abstract: BAV23C KT712
Text: BAV23A/C/S Small Signal Switching Diodes .120 3.04 .110(2.80) .103(2.60) .086(2.20) .056(1.4) .047(1.2) 3 .008(.20) .003(.08) .006(0.15)Min 1 .080(2.04) .070(1.78) .044(1.11) .035(0.89) .020(.50) .013(.35) 2 .004 (0.1) MAX SOT-23 Dimensions in inches and (millimeters)
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BAV23A/C/S
OT-23
BAV23C
BAV23A
BAV23S
100mA
100us
200mA
KL31
KT712
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Untitled
Abstract: No abstract text available
Text: BAW56/BAV70/BAV99/BAL99 Small Signal Switching Diodes .119 3.0 .110(2.8) .103(2.6) .086(2.2) .056(1.4) .047(1.2) .007(.17) .002(.05) .007(.20)MIN .083(2.1) .066(1.7) .044(1.1) .035(0.9) .020(.50) .013(.35) .006(.15)MAX PRIMARY CHARACTERISTICS SOT-23 Dimensions in inches and (millimeters)
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BAW56/BAV70/BAV99/BAL99
OT-23
250mW
BAV70
BAW56
BAV99
BAL99
OT-23,
MIL-STD-202,
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Sis 968
Abstract: m21 sot23 transistor BBBCR2032BX sis968 KBC-ITE-8512 transistor m21 sot23 LG-2413S-1 SIS762 G784P81U nec c1106
Text: 5 4 3 2 1 D D Inventec Corporation R&D Division C C CONFIDENTIAL B B Board name : Mother Board Schematic A A Project : xxxx FSC_v5535 Version : 01 Inventec Corporation <OrgAddr4> 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan
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v5535)
S1002
C1002
SW1001
6026B0057602
1BT002-0121L
SW1002
C1003
Sis 968
m21 sot23 transistor
BBBCR2032BX
sis968
KBC-ITE-8512
transistor m21 sot23
LG-2413S-1
SIS762
G784P81U
nec c1106
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88910-5204m
Abstract: ISL6251 AU-6433 AU6433B52-GBL-GR LTT-SS801U-13 AM4825P LG-2413S-2 apl3510a CN901 CN602
Text: 5 4 3 2 1 D D ACER_BAP41/BXP41 C C CARD READER BOARD 2009.06.30 B B A A EE DRAWER DESIGN CHECK RESPONSIBLE SIZE= FILE NAME: XXXX-XXXXXX-XX P/N XXXXXXXXXXXX 5 4 3 2 DATE POWER DATE INVENTEC D-CS-1310A2271201-ALG TITLE BAP41/BXP41 Card Reader/B VER: CODE SIZE
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BAP41/BXP41
D-CS-1310A2271201-ALG
BAP41/BXP41
CN302
6012B0073301
FIX202
FIX201
FIX206
FIX204
FIX203
88910-5204m
ISL6251
AU-6433
AU6433B52-GBL-GR
LTT-SS801U-13
AM4825P
LG-2413S-2
apl3510a
CN901
CN602
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Untitled
Abstract: No abstract text available
Text: BAS40/A/C/S .119 3.0 .110(2.8) Small Signal Schottky Barrier Rectifiers .100(2.55) .089(2.25) .056(1.4) .047(1.2) .006(.15) .003(.08) .020(0.5) .012(0.3) .079(2.0) .071(1.8) .044(1.1) .035(0.9) .020(.50) .012(.30) .004 (0.1) MAX PRIMARY CHARACTERISTICS SOT-23
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BAS40/A/C/S
OT-23
200mA
BAS40C
BAS40A
BAS40S
BAS40
OT-23
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: BAS70/A/C/S .119 3.0 .110(2.8) Small Signal Schottky Barrier Rectifiers .100(2.55) .089(2.25) .056(1.4) .047(1.2) .006(.15) .003(.08) .020(0.5) .012(0.3) .079(2.0) .071(1.8) .044(1.1) .035(0.9) .020(.50) .012(.30) .004 (0.1) MAX PRIMARY CHARACTERISTICS SOT-23
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BAS70/A/C/S
OT-23
BAS70C
BAS70A
BAS70S
BAS70
OT-23
MIL-STD-202,
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datasheet j201 jfet
Abstract: A04g 2N4338 J201 equivalent J201 N-channel JFET marking A04 J201 J204 SST201 SST202
Text: N-Channel JFET General Purpose Amplifier CORPORATION J201 – J204 / SST201 – SST204 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V
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SST201
SST204
-55oC
150oC
135oC
10sec)
300oC
360mW
datasheet j201 jfet
A04g
2N4338
J201 equivalent
J201 N-channel JFET
marking A04
J201
J204
SST201
SST202
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SST201
Abstract: J201 equivalent A04g datasheet j201 jfet marking A04 sst204 2N4338 J201 J204 SST202
Text: N-Channel JFET General Purpose Amplifier LLC J201 – J204 / SST201 – SST204 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V
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SST201
SST204
-55oC
150oC
135oC
10sec)
300oC
360mW
OT-23
SST201
J201 equivalent
A04g
datasheet j201 jfet
marking A04
sst204
2N4338
J201
J204
SST202
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Untitled
Abstract: No abstract text available
Text: N-Channel JFET General Purpose Amplifier LLC J201 – J204 / SST201 – SST204 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V
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SST201
SST204
-55oC
150oC
135oC
10sec)
300oC
360mW
DS041
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A115-A
Abstract: C101 SN74AHC1G02 SN74AHC1G02DBVR SN74AHC1G02DBVT
Text: SN74AHC1G02 SINGLE 2-INPUT POSITIVE-NOR GATE SCLS342I – APRIL 1996 – REVISED JANUARY 2003 D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 2 V to 5.5 V Max tpd of 6.5 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V
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SN74AHC1G02
SCLS342I
000-V
A114-A)
A115-A)
SN74AHC1G02DCKR
SC-70)
A115-A
C101
SN74AHC1G02
SN74AHC1G02DBVR
SN74AHC1G02DBVT
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Untitled
Abstract: No abstract text available
Text: P & 2SA812S SEMICONDUCTOR FORW ARD INTERNATIONAL B L B C IR O H R S LTD. T EC H N IC A L DATA PNP EPITAXIAL SILICON TRANSISTOR L O W FR E Q U E N C Y A M PL IFIE R Package: SOT-23 * Complement to2SC1623S * Collector-Base Voltage: Vcbo—60V * Excellent Hfe linearity.
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2SA812S
OT-23
to2SC1623S
b-25V
062ii
300uS,
-100uA
-100mA
-10mA
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J201 equivalent
Abstract: No abstract text available
Text: N-ChannelJFET General Purpose Amplifier calocft CO RP O R A TIO N \J J201 J204/SST201 SST204 - - FEATURES ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise specified • High Input Impedance • Low I g s s Gate-Source or Gate-Drain Voltage .-40V
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OCR Scan
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PDF
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J204/SST201
SST204
360mW
J201 equivalent
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Untitled
Abstract: No abstract text available
Text: r n l A /i i / 1 WUIOOIC N-Channel JFET General Purpose Amplifier CORPORATION J201 - J204/SST201 - SST204 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • High Input Impedance • Low I g s s Gate-Source or Gate-Drain Voltage . -40V
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OCR Scan
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PDF
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J204/SST201
SST204
360mW
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S498
Abstract: BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components
Text: <IENENS AKTIEN6ESELLSCHAF 03E D • 023SbOS 001Sb37 4 BISIE6 T^£7~2S' Kleinsignaltransistoren Small-Signal Transistors N-Kanal Anreicherungstypen N channel enhancem ent types K S max) V ti(max) rriA ft P,ot mW G ehäuse P ackage SBS SCS Bestellnummer Ordering co d e
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OCR Scan
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023SbOS
lSb37
Q62702-
BSS981'
BSS1381Â
OT-23
BSS3951Â
O-202
BSS100
BSS123
S498
BSS97
BSS95
BSS125
siemens 230 92
BSS 130
BSS 97
s484
S458
BSS components
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