HV9919
Abstract: Marking code K7 Schottky Diode buck led driver
Text: HV9919 Hysteretic, Buck, High Brightness LED Driver with High-Side Current Sensing Features General Description ► ► ► ► ► ► ► ► ► The HV9919 is a PWM controller IC designed to drive high brightness LEDs using a buck topology. It operates from an
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HV9919
40VDC
MO-229,
DSPD-8DFNK73X3P065,
C041009.
DSFP-HV9919
A041309
Marking code K7 Schottky Diode
buck led driver
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Untitled
Abstract: No abstract text available
Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities
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VN1206
DSFP-VN1206
A041309
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jedec package TO-236AB
Abstract: TS 100-12 VP2110 VP2110K1-G VP2110ND
Text: VP2110 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP2110
VP2110
DSFP-VP2110
A041309
jedec package TO-236AB
TS 100-12
VP2110K1-G
VP2110ND
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4012L
Abstract: 125OC VN4012 VN4012L-G
Text: VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN4012
DSFP-VN4012
A041309
4012L
125OC
VN4012
VN4012L-G
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2406L
Abstract: VN2406
Text: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN2406
DSFP-VN2406
A041309
2406L
VN2406
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Untitled
Abstract: No abstract text available
Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement
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LND01
LND01
DSFP-LND01
A073012
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Untitled
Abstract: No abstract text available
Text: Supertex inc. HV7800 High Side Current Monitor 8.0 to 450V Voltage Gain of 1 Features General Description Applications This monitor IC features a very wide input voltage range, high accuracy of transfer ratio, small size, low component count, low power consumption, ease of use, and low cost. Offline,
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HV7800
HV7800.
500mV
700ns
OT-23
DSFP-HV7800
A062813
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MO-178
Abstract: DSPD-5SOT23K1
Text: Supertex inc. Package Outline 5-Lead SOT-23 Package Outline K1 2.90x1.60mm body, 1.45mm height (max), 0.95mm pitch D θ1 e1 5 E1 E Note 1 (Index Area D/2 x E1/2) 1 e L b L1 Top View L2 Gauge Plane θ Seating Plane View B View B A A A2 A1 Seating Plane Side View
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OT-23
DSPD-5SOT23K1
A041309
MO-178
DSPD-5SOT23K1
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Untitled
Abstract: No abstract text available
Text: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Dual N-channel devices Low threshold – 2.0V max. High input impedance Low input capacitance – 125pF max. Fast switching speeds Low on-resistance Free from secondary breakdown
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TD9944
125pF
DSFP-TD9944
A041309
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LND01K1-G
Abstract: No abstract text available
Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement
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LND01
LND01
DSFP-LND01
A042712
LND01K1-G
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2410L
Abstract: VN2410
Text: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN2410
DSFP-VN2410
A041309
2410L
VN2410
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SITN
Abstract: TN0110
Text: TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0110
DSFP-TN0110
A041309
SITN
TN0110
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mark G1 SOT-23
Abstract: sot-23 MARKING CODE G1 G1 SOT23 sot-23 MARKING CODE IGs DSPD-5SOT23K1 LP1030
Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFETs. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener
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LP1030D
LP1030D
DSFP-LP1030D
NR101512
mark G1 SOT-23
sot-23 MARKING CODE G1
G1 SOT23
sot-23 MARKING CODE IGs
DSPD-5SOT23K1
LP1030
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QFN PACKAGE thermal resistance
Abstract: flyback led driver with pwm dimming 1N4148 HV861 HV861K7-G LPS4012 MO-220
Text: HV861 Dimmable, Low Noise, Dual EL Lamp Driver Features ► ► ► ► ► ► ► ► ► ► The device uses a single inductor and a minimum number of passive components. Using the internal reference voltage, the regulated output voltage is at a nominal value of 90V.
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HV861
180VPP
DSFP-HV861
A041309
QFN PACKAGE thermal resistance
flyback led driver with pwm dimming
1N4148
HV861
HV861K7-G
LPS4012
MO-220
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1206L
Abstract: VN1206
Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN1206
DSFP-VN1206
A041309
1206L
VN1206
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Untitled
Abstract: No abstract text available
Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement
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LND01
LND01
DSFP-LND01
NR073012
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SOT-23 MOSFET P-CHANNEL a1 1- mark
Abstract: No abstract text available
Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description ►► 300V breakdown voltage ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Low input capacitance ►► Fast switching speeds
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LP1030D
LP1030D
DSFP-LP1030D
A031414
SOT-23 MOSFET P-CHANNEL a1 1- mark
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TP0604
Abstract: No abstract text available
Text: Supertex inc. TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown
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TP0604
DSFP-TP0604
A041309
TP0604
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Untitled
Abstract: No abstract text available
Text: Supertex inc. HV7801 High Side Current Monitor 8.0 to 450V Voltage Gain of 5 Features General Description ►► Supply voltage 8V to 450V ►► Voltage output device ►► Typical gain 5.0±1% ►► Max VSENSE 500mV ►► Fast rise and fall time, 700ns to 2.0µs
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HV7801
500mV
700ns
HV7801
DSFP-HV7801
A062813
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SOT-23 MOSFET P-CHANNEL a1 1- mark
Abstract: L21e
Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener
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LP1030D
LP1030D
DSFP-LP1030D
NR011613
SOT-23 MOSFET P-CHANNEL a1 1- mark
L21e
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Untitled
Abstract: No abstract text available
Text: Supertex inc. DN1509 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description This low threshold, depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well
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DN1509
DSFP-DN1509
B122013
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Untitled
Abstract: No abstract text available
Text: VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities
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VN4012
DSFP-VN4012
A041309
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Untitled
Abstract: No abstract text available
Text: VP2110 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-to-drain diode High input impedance and high gain
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VP2110
VP2110
DSFP-VP2110
A041309
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Untitled
Abstract: No abstract text available
Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement
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LND01
LND01
DSFP-LND01
B031414
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