4Mx4 DRAM
Abstract: No abstract text available
Text: PcRam TS4MDM32V60 Description Features The TS4MDM32V60 is a 4,194,304-word by 32-bit • 4,194,304-word by 32-bit organization. dynamic RAM module. This module consists of 8 pcs • Fast Page Mode Operation. 4Mx4-bit, 3.3 volt, fast page mode DRAMs in TSOP
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TS4MDM32V60
TS4MDM32V60
304-word
32-bit
32-bit
4Mx4 DRAM
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simm EDO 72pin
Abstract: No abstract text available
Text: 72PIN EDO SIMM 32MB With 4Mx4 60ns TS8MED3260 Description Features The TS8MED3260 is a 8M by 32-bit dynamic RAM • Extended Data Out Mode operation module with 16 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.
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72PIN
TS8MED3260
TS8MED3260
32-bit
simm EDO 72pin
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IS42VS16100E
Abstract: 42VS16100E IS42VS16100E-75BLI
Text: IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100, 83 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11
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IS42VS16100E
4000-mil
60-ball
400-mil
IS42VS16100E
42VS16100E
IS42VS16100E-75BLI
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CMS3216LAF
Abstract: CMS3216LAG CMS3216LAH
Text: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions
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CMS3216LAx-75xx
2Mx16)
CMS3216LAF
CMS3216LAG
CMS3216LAH
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8M362SSQ4-XX FAST PAGE MODE 8M X 36 DRAM SIMM, 2K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED8M362SSQ4-XX is a 8M bit X 36 Dynamic RAM high density memory module. The AVED Memory Products AVED8M362SSQ4-XX
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AVED8M362SSQ4-XX
AVED8M362SSQ4-XX
24-pin
28-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8M322SSM4/LSM4 FAST PAGE MODE 8MX32 DRAM SIMM, 2K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED8M322SSM4/LSM4 is an 8M bit x 32 Dynamic RAM high density memory module. The AVED Memory Products AVED8M322SSM4/LSM4
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AVED8M322SSM4/LSM4
8MX32
AVED8M322SSM4/LSM4
24-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: SDRAM AS4SD2M32 512K x 32 x 4 Banks 64-Mb PIN ASSIGNMENT (Top View) Synchronous SDRAM 86-Pin TSOPII FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 512K x 32 x 4 banks • Fully synchronous; all signals registered on positive
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AS4SD2M32
64-Mb)
133MHz
TSOPII-86LD
-40oC
-55oC
125oC
AS4SD2M32
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M29W320DT
Abstract: M29W320D M29W320DB TFBGA48
Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns
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M29W320DT
M29W320DB
TSOP48
TFBGA63
TFBGA48
M29W320DT
M29W320D
M29W320DB
TFBGA48
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8051 microcontroller LED dot matrix
Abstract: led display alarm clock 8051 microcontroller Digital Clock with Alarm Using PCF8583P and 8051 circuit diagram of bi colour led blinker PCF8575 PCF8577 PCA9518 z80 processor application traffic circuit p87c528 replacement ic software program pcf8583
Text: s bu I C2 a ria ld at se ria lc lo ck se Quarndon Electronics Quarndon Electronics Ltd. Slack Lane Derby DE22 3ED tel: 01332 332651 fax: 01332 360922 email: sales@quarndon.co.uk website: www.quarndon.co.uk Contents 3 Philips Semiconductor I2C Devices 3 Typical I2C Product Characteristics
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PCA9518,
8051 microcontroller LED dot matrix
led display alarm clock 8051 microcontroller
Digital Clock with Alarm Using PCF8583P and 8051
circuit diagram of bi colour led blinker
PCF8575
PCF8577
PCA9518
z80 processor application traffic circuit
p87c528 replacement
ic software program pcf8583
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NT511740C0J
Abstract: NT511740C0J-50 NT511740C0J-60 NT511740C0J-70 0J70 NT511740
Text: NT511740C0J 4,194,304-word x 4-bit Dynamic RAM : Fast Page Mode 1. DESCRIPTION The NT511740C0J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC’s CMOS silicon gate technology. The NT511740C0J achieves high integration , high-speed operation , and low-power
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NT511740C0J
304-word
NT511740C0J
26/24-pin
cycles/32
NT511740C0J-50
NT511740C0J-60
NT511740C0J-70
0J70
NT511740
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09005aef811ce1d5
Abstract: MT48LC2M32B2 MT48LC2M32B2TG-7G
Text: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdramds FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock
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MT48LC2M32B2
PC100
096-cycle
09005aef811ce1fe/Source:
09005aef811ce1d5
64MSDRAMx32
09005aef811ce1d5
MT48LC2M32B2TG-7G
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A1051
Abstract: No abstract text available
Text: TMS27C291, TMS27C292 16.384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ-ONLY MEMORY SEPTEM BER 1986 —REVISED APRIL 1988 Organization . . . 2K x 8 J AND N PA C KA G E Pin Compatible with Existing 2K x 8 Bipolar/High-Speed CM OS EPROMs
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TMS27C291,
TMS27C292
384-BIT
TMS27PC291
27C/PC291-3
27C/PC291
27C/PC291-5
27C/PC291-35
27C/PC291-45
A1051
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cq837
Abstract: No abstract text available
Text: 4J« *- »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4*194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36
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364080AS
364080ASG
THM364080AS/ASG
TC514100ASJ
364080ASG
A0-A10
THM36408QAS
THM364080AS
THM364080ASG
cq837
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TC5117800bnt-60
Abstract: TC5117800B
Text: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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TC5117800BNJ/BNT-60/70
TC5117800BNT
TC5117800bnt-60
TC5117800B
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Untitled
Abstract: No abstract text available
Text: TMS44100, TMS44100P 4194304-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS410F-SEPTEMBER 1989-REVISED DECEMBER 1992 Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS SD P AC K A G E t (TOP VIEW) DJ P A C K A G E t (TOP VIEW) Organization . . . 4194 304 x 1
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TMS44100,
TMS44100P
4194304-BIT
SMHS410F-SEPTEMBER
1989-REVISED
TMS44100/P-60
TMS44100/P-70
TMS44100/P-80
A0-A10
TMS44100
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tc5117400f
Abstract: TC5117400J
Text: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced
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TC5117400J/Z/FT-60/70
TC5117400J/Z/FT-60/70
TC5117400J/Z/FT.
1MX16
tc5117400f
TC5117400J
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Ks-7b
Abstract: No abstract text available
Text: TMS417800, TMS417800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 7 8 0 -D E C E M B E R 1992 x 8 DE P AC K A G E t DZ P A C K AG E t TOP VIEW (TOP VIEW) * Performance Ranges: vcc[ 1o D Q 0[ 2 ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE
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TMS417800,
TMS417800P
417800/P-60
417800/P-70
417800/P-80
TMS417800
Ks-7b
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TC514100
Abstract: 514100A
Text: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION THE TC514100A is the new generation dynamic RAM organized 4,194,304 word by 1 bit. The TC514410ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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--------------TC514100ASJ/AZ/AFT-60/70/80
TC514100A
TC514410ASJ/AZ/AFT
300mil)
TC51400/ASJ/A27AFT.
TC514100
514100A
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27c eeprom
Abstract: 27C291 74TTL
Text: 0^1755 DG77HS TMS27C291, TMS27C292 16,384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ ONLY MEMORY SEPTEMBER 1988-R EV ISED APRIL 1988 • Single 5-V Power Supply • Pin Compatible with Existing 2K x 8 BIpolar/High-Speed CMOS EPROMs
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DG77HS
TMS27C291,
TMS27C292
384-BIT
TMS27PC291
1988-R
27C/PC291-3
27C292-3
27C/PC291
27c eeprom
27C291
74TTL
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jeida dram 88 pin
Abstract: STI324000C1
Text: STI324000C1 -X X V 88-PIN CARDS 4M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: ^RAC Wc *RC STI324000C1 -60V 60ns 15ns 110ns STI324000C1-70V 70ns 20ns 130ns The Simple Technology STI324000C1 is a 4M bil x 32 Dynamic RAM high density memory card. The Simple Technology
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STI324000C1
88-PIN
110ns
130ns
STI324000C1-70V
24pin
jeida dram 88 pin
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Untitled
Abstract: No abstract text available
Text: HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JE D E C Standard, Unbuffered 8 Byte Dual In-Line Memory Module
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64-Bit
72-Bit
168pin
HYM64V1605GU-50/-60
HYM64V1645GU-50/-60
HYM72V1605GU-50/-60
HYM72V1645GU-50/-60
V1605/45GU-50/-60
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TME 87 0D
Abstract: No abstract text available
Text: SIEMENS 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60 HYM64V8045GU-50/-60 HYM72V8005GU-50/-60 HYM72V8045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect * 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module
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64-Bit
72-Bit
168pin
HYM64V8005GU-50/-60
HYM64V8045GU-50/-60
HYM72V8005GU-50/-60
HYM72V8045GU-50/-60
DM168-13
TME 87 0D
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Untitled
Abstract: No abstract text available
Text: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability
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STI368003
STI368003-60
STI368003-70
110ns
130ns
72-PIN
STI368003
24pin
28-pin
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 8M x 64-Bit EOO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60/-70 HYM64V8045GU-50/-60/-70 HYM72V8005GU-50/-60/-70 HYM72 V8045G U-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information •
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64-Bit
72-Bit
168pin
HYM64V8005GU-50/-60/-70
HYM64V8045GU-50/-60/-70
HYM72V8005GU-50/-60/-70
HYM72
V8045G
U-50/-60/-70
V8005/45GU-50/-60/-70
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