SFP EVAL BOARD

Abstract: 2N7002 ADN2841 ADN2860 FDV301N
Contextual Info: 3-Channel Digital Potentiometer with Nonvolatile Memory ADN2860 VSS 32 BYTES RDAC EEPROM DGND SCL SDA AD0 AD1 I2C SERIAL INTERFACE DATA CONTROL A0_EE COMMAND DECODE LOGIC A1_EE RESET WP POWER-ON RESET ADDRESS DECODE LOGIC RDAC0 A0 W0 9 BITS RDAC1 B0 A1 W1

ADN2860

Abstract: rdac SFP EVAL BOARD 2N7002 ADN2841 FDV301N
Contextual Info: 3-Channel Digital Potentiometer with Nonvolatile Memory ADN2860 32 BYTES RDAC EEPROM DGND SCL SDA AD0 AD1 I2C SERIAL INTERFACE DATA CONTROL A0_EE COMMAND DECODE LOGIC A1_EE RESET WP POWER-ON RESET ADDRESS DECODE LOGIC RDAC0 A0 W0 9 BITS RDAC1 B0 A1 W1 9 BITS

2N7002

Abstract: ADN2841 ADN2860 ADN2860ACPZ25-RL7 FDV301N AD2860
Contextual Info: 3-Channel Digital Potentiometer with Nonvolatile Memory ADN2860 32 BYTES RDAC EEPROM DGND SCL SDA AD0 AD1 I2C SERIAL INTERFACE DATA CONTROL A0_EE COMMAND DECODE LOGIC A1_EE RESET WP POWER-ON RESET ADDRESS DECODE LOGIC RDAC0 A0 W0 9 BITS RDAC1 B0 A1 W1 9 BITS

Contextual Info: 3-Channel Digital Potentiometer with Nonvolatile Memory ADN2860 32 BYTES RDAC EEPROM DGND SCL SDA AD0 AD1 I2C SERIAL INTERFACE DATA CONTROL A0_EE COMMAND DECODE LOGIC A1_EE RESET WP POWER-ON RESET ADDRESS DECODE LOGIC RDAC0 A0 W0 9 BITS RDAC1 B0 A1 W1 9 BITS

Contextual Info: CM1293 2, 4, and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1293 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

CM1293-04SO

Abstract: A1 D036 CM1293-02SR CM1293 D032 D033 sot23-5 footprint
Contextual Info: CM1293 2, 4, and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1293 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

A1 D036

Contextual Info: TO SH IB A THMY721661EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TO SH IB A THMY721661EG-10 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7216C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

PC133-SDRAM

Contextual Info: T O S H IB A THMY7232G1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7232G1 EG-80#-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT/FTL DRAMs and an unbuffer on a printed circuit board.

tfk 136

Contextual Info: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY6416E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416E1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TO SHIBA TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

D018

Abstract: D019 D032
Contextual Info: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.

TC59SM716FT

Contextual Info: T O S H IB A THMY6480H1EG-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480H1EG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY6416C1EG-80H TENTATIVE TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1EG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

D033

Abstract: A1 D036
Contextual Info: T O S H IB A THMY6432G1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6432G1EG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TO SHIBA THMY648071 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY648071BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY6480D1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480D1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY6480F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY641691 EG-80#-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY641691EG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

EG 8010

Abstract: D018 D019 D032 D051 TC59S6408BFT THMY648071BEG
Contextual Info: TO SHIBA THMY648071 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY648071BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.