M2805
Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Text: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged
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APM2805QA
-20V/-2
500mA.
JESD-22,
M2805
APM2805
APM2805QA
JESD-22
MO-229
ANPEC
c125t
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PDF
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apm28
Abstract: A104 diode
Text: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged
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APM2804QA
-20V/-2
500mA.
APM2804
JESD-22,
apm28
A104 diode
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Si2301DS-T1
Abstract: SI2301DS A1 marking code
Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code
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Si2301DS
O-236
OT-23)
Si2301DS-T1
18-Jul-08
A1 marking code
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SI2301DS
Abstract: Si2301DS-T1 70627
Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code
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Si2301DS
O-236
OT-23)
Si2301DS-T1
S-31990--Rev.
13-Oct-03
70627
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Untitled
Abstract: No abstract text available
Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code
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Si2301DS
O-236
OT-23)
Si2301DS-T1
08-Apr-05
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Si2301DS
Abstract: No abstract text available
Text: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2301DS
O-236
OT-23)
S-58543--Rev.
20-Jul-98
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kml0d6np20ea
Abstract: No abstract text available
Text: SEMICONDUCTOR KML0D6NP20EA TECHNICAL DATA N and P-Ch Trench MOSFET General Description It’s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. B C A 1 6 2 5 3 4 A1 FEATURES C B1 D ・N-Channel : VDSS=20V, ID=600mA RDS(ON =0.70Ω @ VGS=4.5V).
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KML0D6NP20EA
600mA
500mA
350mA
-400mA
-300mA
250mA
kml0d6np20ea
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Si2301DS
Abstract: vishaysiliconix
Text: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2301DS
O-236
OT-23)
S-58543--Rev.
20-Jul-98
vishaysiliconix
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SI2301DS
Abstract: S5135
Text: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si2301DS
O-236
OT-23)
S-51354--Rev.
11-Dec-96
S5135
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BM2301
Abstract: SI2301DS
Text: BM2301 P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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BM2301
O-236
OT-23)
Si2301DS
BM2301
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SI2301DS
Abstract: No abstract text available
Text: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si2301DS
O-236
OT-23)
S-51354--Rev.
11-Dec-96
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VKM40-06P1
Abstract: eco-pac CoolMOS Power Transistor power mosfet 200A mosfet Vds 50 Vgsth a22055 welding mosfet
Text: VKM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 A1 L9 K 12 P 18 R 18 NTC Preliminary data sheet E10 F10 X 15 K 13
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VKM40-06P1
B25/50
VKM40-06P1
eco-pac
CoolMOS Power Transistor
power mosfet 200A
mosfet Vds 50 Vgsth
a22055
welding mosfet
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SI2301DS
Abstract: No abstract text available
Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2301DS
O-236
OT-23)
S-58543--Rev.
20-Jul-98
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M2805
Abstract: No abstract text available
Text: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • C8 A1 RDS ON = 120mΩ(typ.) @ VGS= -2.5V A2 S3 Super High Dense Cell Design Reliable and Rugged G4 Top View of DFN3x2-8 D (5, 6) C (7, 8) S (3) A (1, 2) VF=0.45V (typ.) @ If=500mA.
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APM2805QA
-20V/-2
500mA.
APM2805
150oC
Co0-2000
M2805
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Untitled
Abstract: No abstract text available
Text: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2301ADS
O-236
OT-23)
Si2301DS
S-20221â
01-Apr-02
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Untitled
Abstract: No abstract text available
Text: VKM 60-01P1 HiPerFETTM Power MOSFET ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ H-Bridge Topology in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 E10 P 18 R 18 NTC Preliminary data sheet L9 K 13 F10 X 15
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60-01P1
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VKM 40-06P1
Abstract: CoolMOS Power Transistor 10P18
Text: VKM 40-06P1 CoolMOS Power MOSFET in ECO-PAC 2 ID25 = 38 A VDSS = 600 V RDSon = 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET 1 Package with Electrically Isolated Base L4 L6 Preliminary data K 12 A1 L9 E 10 P 18 R 18 NTC F 10 X 15 K 10 K 13
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40-06P1
B25/50
VKM 40-06P1
CoolMOS Power Transistor
10P18
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Untitled
Abstract: No abstract text available
Text: VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 K 12 A1 L9 E10 P 18 R 18 NTC K 13 F10 X 15 K10 T 18 V 18 X 18
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60-01P1
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60-01P1
Abstract: eco-pac
Text: VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 L9 E10 P 18 R 18 NTC K 13 F10 X 15 K10 T 18 V 18 X 18
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60-01P1
60-01P1
eco-pac
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ALD1107PBL
Abstract: ALD1107 ALD1117PAL ALD1117 ALD1107PB ALD1117PA P-Channel Enhancement Mode PAL 0007 E MOSFET ALD1106
Text: ADVANCED LINEAR DEVICES, INC. ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION The ALD1107/ALD1117 are monolithic quad/dual P-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1107/ALD1117 offer high input
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ALD1107/ALD1117
ALD1107/ALD1117
CERDIP-14
ALD1107PBL
ALD1107
ALD1117PAL
ALD1117
ALD1107PB
ALD1117PA
P-Channel Enhancement Mode
PAL 0007 E MOSFET
ALD1106
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ALD1106PBL
Abstract: ALD1106 ALD1116PAL ALD1116 ALD1106PB ALD1116PA
Text: ADVANCED LINEAR DEVICES, INC. ALD1106/ALD1116 QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input
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ALD1106/ALD1116
ALD1106/ALD1116
ALD1106PBL
ALD1106
ALD1116PAL
ALD1116
ALD1106PB
ALD1116PA
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ALD1106
Abstract: No abstract text available
Text: ADVANCED LINEAR DEVICES, INC. ALD1106/ALD1116 QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input
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ALD1106/ALD1116
ALD1106/ALD1116
ALD1106
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PAL 0007 E MOSFET
Abstract: ALD1107 ALD1106 ALD1106SBL ALD1117 ALD1106PBL ALD1106DB A*1117 ADVANCED ANALOG Gn2
Text: ADVANCED LINEAR DEVICES, INC. ALD1106/ALD1116 QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input
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ALD1106/ALD1116
ALD1106/ALD1116
CERDIP-14
PAL 0007 E MOSFET
ALD1107
ALD1106
ALD1106SBL
ALD1117
ALD1106PBL
ALD1106DB
A*1117
ADVANCED ANALOG Gn2
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ALD1101APAL
Abstract: ALD1101 ALD1101APA
Text: ADVANCED LINEAR DEVICES, INC. ALD1101A/ALD1101B ALD1101 DUAL N-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1101 is a monolithic dual N-channel matched transistor pair intended for a broad range of analog applications. These enhancementmode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process.
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ALD1101A/ALD1101B
ALD1101
ALD1101
ALD1101A/ALD1101B/ALD1101
ALD1101APAL
ALD1101APA
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