sw dip-3
Abstract: RTL8201BL schematic 74HC14 P02-101-11A9 int1200 T89C51 1117 3.3 A9 sot223 IS62LV256-70T c 1117 adj
Text: 5 4 3 2 JP2 2 1 1 2 3 /PSEN CON2 3.3V 3 2 1 R3 200 RST XTAL1 XTAL2 16 GND 6 17 28 39 NC1 NC2 NC3 NC4 D0 D1 D2 D3 D4 D5 D6 D7 P2.0/A8 P2.1/A9 P2.2/A10 P2.3/A11 P2.4/A12 P2.5/A13 P2.6/A14 P2.7/A15 18 19 20 21 22 23 24 25 A8 A9 A10 A11 A12 A13 A14 A15 ALE/PROG
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2/A10
3/A11
4/A12
5/A13
6/A14
7/A15
24C02A/SO
74HC573
10ACT
100ACT
sw dip-3
RTL8201BL schematic
74HC14
P02-101-11A9
int1200
T89C51
1117 3.3
A9 sot223
IS62LV256-70T
c 1117 adj
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PDF
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hxqfn60u
Abstract: SOT1134-1 sot1134
Text: Package outline HXQFN60U: plastic thermal enhanced extremely thin quad flat package; no leads; 60 terminals; UTLP based; body 4 x 6 x 0.5 mm B D SOT1134-1 A terminal 1 index area E A A1 detail X e2 e1 1/2 e e C A B C v w L1 D2 D6 A11 B8 B10 A16 D7 A10 L eR
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HXQFN60U:
OT1134-1
sot1134-1
hxqfn60u
sot1134
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Untitled
Abstract: No abstract text available
Text: Package outline HUQFN24U: plastic thermal enhanced ultra thin quad flat package; no leads; 24 terminals; UTLP based; body 3 x 3 x 0.55 mm A B D SOT1080-1 terminal 1 index area E A A1 detail X e1 v w C A B C M M v w b M M C A B C C D2 y y1 C e L1 A6 D3 A10
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HUQFN24U:
OT1080-1
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Untitled
Abstract: No abstract text available
Text: Package outline HVQFN16: plastic thermal enhanced very thin quad flat package; no leads; 16 terminals; body 3 x 3 x 0.85 mm D B SOT1335-1 A A Terminal 1 index area E A1 detail X e1 e3 C A B C C b1 e L k v w b A6 y1 C y A9 A5 e3 A10 e e2 Eh A1 A13 A16 Terminal 1
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HVQFN16:
OT1335-1
sot1335-1
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VMD32
Abstract: R526
Text: 1 2 3 4 5 6 7 8 BWP BCA11 BCA10 BCA25 BCA12 BCA24 BCA15 BCA23 BCA16 BCA22 BCA21 BCA20 BCA14 BCA19 BCA13 BCA18 BCA8 BCA17 BCA9 U6 T8 T16 T13 T11 R6 R15 P5 P16 M16 D11 D10 C10 B10 A10 D9 C9 B9 A9 D8 C8 B8 A8 E7 D7 C7 B7 A7 E6 D9 3,7,20 2 AGP_BUSY# 1 G_REQ# 3
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BCA11
BCA10
BCA25
BCA12
BCA24
BCA15
BCA23
BCA16
BCA22
BCA21
VMD32
R526
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PDF
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TSOC 6
Abstract: TSOC6 RX232 BSS U8 97 74HC08 DTR232 A19 SOT23 A18 sot simm72 DS1315
Text: A B C D VCC R17 1 C1+ U1 4 5 6 7 10 11 12 13 RX TX SMCINT EXTINT SMCRST INTOWB WR RD 47 CPURST VCC RSTOL 26 46 45 PSEN P3.0/RXD0 P3.1/TXD0 P3 .2 / INT0 P3 .3 / INT1 P3.4/T0 P3.5/T1 P3 .6 / WR P3 .7 / RD ALE PSEN XRX0 C2 0.1U 3 RX 2 A8 A9 A10 A11 A12 A13 A14
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RX232
TX232
QFP-100
SMC91C94/96
20MHZ
HC-49/US
TSOC 6
TSOC6
RX232
BSS U8 97
74HC08
DTR232
A19 SOT23
A18 sot
simm72
DS1315
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LT 7227
Abstract: ON B34 CR0805 rd sot23 sot23 a36 sot23 D501 AD9 SOT23 B14 sot23 sdi BAV70 AD27
Text: P3V VIO P1 P2 PCI_5V A1 1 P3V +12V_PCI A3 3 TCK TDO A5 5 5 B5 A6 6 6 B6 INTA# X7 1 A8 8 A9 9 X11 A10 10 1 X12 X10 X50 1 AD28 A23 23 AD26 AD20 28 B28 29 B29 AD19 32 B32 A33 33 C_BE2# 33 B33 IRDY# 38 B38 43 B43 AD15 C_BE1# 44 B44 AD14 45 B45 A45 45 A46 46 46 B46
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CC0805
AMP173979-3
LT 7227
ON B34
CR0805
rd sot23
sot23 a36
sot23 D501
AD9 SOT23
B14 sot23
sdi BAV70
AD27
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sn74ls574
Abstract: CR0805 MOTOROLA 136 DPAK MOTOROLA LM393M B52 transistor B58 SO8 surface mount transistor A55 AD27 AD29 AD30
Text: P3V VIO P1 P2 PCI_5V A1 1 P3V +12V_PCI A3 3 TCK TDO A5 5 5 B5 A6 6 6 B6 INTA# X7 1 A8 8 A9 9 X11 1 A10 10 X12 X10 X50 1 AD28 A23 23 AD26 AD20 28 B28 29 B29 AD19 32 B32 A33 33 C_BE2# 33 B33 IRDY# 38 B38 43 B43 AD15 C_BE1# 44 B44 AD14 45 B45 A45 45 A46 46 46 B46
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CC0805
LM393M
RC0805
sn74ls574
CR0805
MOTOROLA 136 DPAK
MOTOROLA LM393M
B52 transistor
B58 SO8
surface mount transistor A55
AD27
AD29
AD30
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diode b26
Abstract: micro SD Card connector sot23 a36 8q diode sot23 sn74ls574 AD27 AD29 AD30
Text: P3V VIO P2 P1 PCI_5V A1 1 P3V VIO VIO A2 2 +12V_PCI A3 3 TCK TDO TDI X7 1 A8 8 A9 9 X11 A10 10 1 X12 X10 C55 2 7 B7 1 X50 TOOL_130 TOOL_130 1 C26 C20 0.1 0.1 CC0805 2 CC0805 2 1 1 CC0805 8 B8 1 9 B9 1 C3 C1 0.01 0.01 CC0805 2 2 CC0805 10 B10 A11 11 11 B11
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CC0805
CR0805
RC1206
NDT452P
diode b26
micro SD Card connector
sot23 a36
8q diode sot23
sn74ls574
AD27
AD29
AD30
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PDF
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surface mount transistor A55
Abstract: surface mount transistor A48 c60 equivalent CR0805 irf150 rd sot23 sn74ls574 sot223, 31 64 sot23 a36 AD30
Text: P3V VIO P2 P1 NDA # VDD_PCI A1 1 P3V VIO VIO 1 B1 VDD_PCI A2 2 +12V_PCI A3 3 TCK A4 4 2 B2 TOOL1 3 B3 TMS X8 TDI X9 1 TDO 1 1 4 B4 A6 6 X7 A8 8 A9 9 X11 A10 10 1 X12 1 X10 7 B7 1 X50 12 B12 A13 13 13 B13 A14 14 14 B14 GNT# 18 B18 REQ# A19 19 19 B19 AD30 AD26
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CC0805
CR0805
NDT451AN
CR1206
OT223
LM393M
IRF150
surface mount transistor A55
surface mount transistor A48
c60 equivalent
CR0805
irf150
rd sot23
sn74ls574
sot223, 31 64
sot23 a36
AD30
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PDF
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surface mount transistor A48
Abstract: CR0805 diode b26 8q diode sot23 AD11 AD30 MAGIC R30
Text: P3V VIO P2 P1 NDA # VDD_PCI A1 1 P3V VIO VIO 1 B1 VDD_PCI A2 2 +12V_PCI A3 3 TCK A4 4 2 B2 TOOL1 3 B3 TMS X8 TDI X9 1 TDO 1 1 4 B4 A6 6 X7 A8 8 A9 9 X11 A10 10 C20 10 16V 2 7227 6 B6 INTA# A7 7 1 X12 1 X10 7 B7 1 X50 1 1 C19 5 B5 A5 5 1 C54 10 16V 2 7227 C53
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CC0805
AD250805
CR0805
NDT451AN
OT223
surface mount transistor A48
CR0805
diode b26
8q diode sot23
AD11
AD30
MAGIC R30
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MJ8-SL
Abstract: 1206 di pm7102 ON B34 PM710 data sheet 74ls373 sot23 a36 a26 sot23 AMP-MJ8 74ls373 datasheet
Text: P1 P2 P3V VDD VIO P3V VIO VIO VDD A1 1 1 B1 A2 2 2 B2 TCK A3 3 A4 4 1 A5 5 A6 6 INTA TDO 2 6 B6 0603 1812_MICDYN 7 B7 A8 8 X49 A9 9 2 C36 0.1 0.1 2 2 2 1812_MICDYN 10 B10 A11 11 11 B11 A12 12 12 B12 A13 13 13 B13 A14 14 C38 10 16V 8 B8 9 B9 X50 A10 10 1 1
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CSE003
MJ8-SL
1206 di
pm7102
ON B34
PM710
data sheet 74ls373
sot23 a36
a26 sot23
AMP-MJ8
74ls373 datasheet
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PDF
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diode MARKING A10
Abstract: sot marking a10 TSM1N80CW 800v mosfet MOSFET 800V 3A TSM1N80 id 0835 MOSFET 800V 15A diode 800v A10 SOT
Text: TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 800 21.6 @ VGS =10V ID (A) 0.15 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM1N80
OT-223
TSM1N80
diode MARKING A10
sot marking a10
TSM1N80CW
800v mosfet
MOSFET 800V 3A
id 0835
MOSFET 800V 15A
diode 800v
A10 SOT
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Untitled
Abstract: No abstract text available
Text: DRAFT RF3315 DRAFT RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND RoHS Compliant & Pb-Free Product Package Style: SOT89 Features +40dBm Output IP3 12.5dB Gain at 2.0GHz +23dBm P1dB 3.0dB Typical Noise Figure at
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RF3315Broadband
RF3315
300MHz
40dBm
23dBm
DS050318
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k 146
Abstract: schematics TDMA
Text: RF2472 RF2472 2.4GHz Low Noise Amplifier with Enable 2.4GHz LOW NOISE AMPLIFIER WITH ENABLE Package Style: SOT 5 Lead Features DC to >6GHz Operation 2.7V to 4.0V Single Supply High Input IP3 1.5dB Noise Figure at 2400MHz 14dB Gain at 2400MHz
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RF2472
RF2472
2400MHz
DS040927
k 146
schematics TDMA
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PDF
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Untitled
Abstract: No abstract text available
Text: RF2472 RF2472 2.4GHz Low Noise Amplifier with Enable 2.4GHz LOW NOISE AMPLIFIER WITH ENABLE Package Style: SOT 5 Lead Features DC to >6GHz Operation 2.7V to 4.0V Single Supply High Input IP3 1.5dB Noise Figure at 2400MHz 14dB Gain at 2400MHz
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RF2472
RF2472
2400MHz
DS040927
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PDF
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RF DRIVER AMPLIFIER
Abstract: No abstract text available
Text: DRAFT RF2472 DRAFT RF2472 2.4GHz Low Noise Amplifier with Enable 2.4GHz LOW NOISE AMPLIFIER WITH ENABLE Package Style: SOT 5 Lead Features DC to >6GHz Operation 2.7V to 4.0V Single Supply High Input IP3 1.5dB Noise Figure at 2400MHz 14dB Gain at 2400MHz
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RF2472
2400MHz
DS040927
RF DRIVER AMPLIFIER
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RF2361
Abstract: rf2878
Text: RF2361 3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER Package Style: SOT 5-Lead Features Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Single 2.5V to 6.0V Power Supply 150MHz to 2500MHz Operation Extremely Small SOT 5-Lead
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RF2361
150MHz
2500MHz
RF2361
2002/95/EC
DS070731
rf2878
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PDF
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TSM2318
Abstract: N-Channel 40V MOSFET n-channel mosfet SOT-23 SOT23 A10 MOSFET SOT-23 MOSFET N SOT-23 Power MOSFET N-Channel sot-23 case marking sot 23 n-channel mosfet transistor IDA45
Text: TSM2318 40V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 40 Features ID (A) 45 @ VGS = 10V 3.9 62.5 @ VGS = 4.5V 3.5 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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TSM2318
OT-23
TSM2318CX
TSM2318
N-Channel 40V MOSFET
n-channel mosfet SOT-23
SOT23 A10
MOSFET SOT-23
MOSFET N SOT-23
Power MOSFET N-Channel sot-23
case marking sot 23
n-channel mosfet transistor
IDA45
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Untitled
Abstract: No abstract text available
Text: TSM2318 40V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 40 Features ID (A) 45 @ VGS = 10V 3.9 62.5 @ VGS = 4.5V 3.5 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
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TSM2318
OT-23
TSM2318CX
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marking code l sot-25 step-up
Abstract: No abstract text available
Text: TS1909 MicroPower VFM Boost DC to Dc Converter SOT-25 Pin Definition: 1. Enable 2. Output 3. N.C 4. Ground 5. SW General Description The TS1909 is a high efficiency VFM Step-up DC/DC converter for small, low input voltage or battery powered systems with ultra low quiescent supply current. The TS1909 accept a positive input voltage from start-up voltage to
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TS1909
OT-25
TS1909
marking code l sot-25 step-up
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TRANSISTOR 0835
Abstract: transistor A10 a10 transistor
Text: TSB1424A Low Vcesat PNP Transistor SOT-223 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -40V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD882S
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TSB1424A
OT-223
-100mA
TSD882S
TSB1424ACW
TRANSISTOR 0835
transistor A10
a10 transistor
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Untitled
Abstract: No abstract text available
Text: TS1909 MicroPower VFM Boost DC to Dc Converter SOT-25 Pin Definition: 1. Enable 2. Output 3. N.C 4. Ground 5. SW General Description The TS1909 is a high efficiency VFM Step-up DC/DC converter for small, low input voltage or battery powered systems with ultra low quiescent supply current. The TS1909 accept a positive input voltage from start-up voltage to
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TS1909
OT-25
TS1909
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Untitled
Abstract: No abstract text available
Text: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate
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MMBT2907A
350mW,
OT-23
MIL-STD-202,
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