A1356 TRANSISTOR Search Results

A1356 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

A1356 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: A1356 High Precision Linear Hall-Effect Sensor With an Open Drain Pulse Width Modulated Output Features and Benefits Description Simultaneous programming of PWM carrier frequency, quiescent duty cycle, and sensitivity; for system optimization Factory programmed sensitivity temperature coefficient	Original	PDF	A1356
A1356 transistor Abstract: a1356 "Linear Hall-effect Sensor" Text: A1356 High Precision Linear Hall-Effect Sensor With an Open Drain Pulse Width Modulated Output Features and Benefits Description ▪ Simultaneous programming of PWM carrier frequency, quiescent duty cycle, and sensitivity; for system optimization ▪ Factory programmed sensitivity temperature coefficient	Original	PDF	A1356 A1356 transistor a1356 "Linear Hall-effect Sensor"
A1356 transistor Abstract: A1356 A1356LKB-T Text: A1356 High Precision Linear Hall-Effect Sensor IC With an Open Drain Pulse Width Modulated Output Features and Benefits Description ▪ Simultaneous programming of PWM carrier frequency, quiescent duty cycle, and sensitivity; for system optimization ▪ Factory programmed sensitivity temperature coefficient	Original	PDF	A1356 A1356 transistor A1356LKB-T
A1356 transistor Abstract: No abstract text available Text: A1356 High Precision Linear Hall-Effect Sensor IC With an Open Drain Pulse Width Modulated Output Features and Benefits Description ▪ Simultaneous programming of PWM carrier frequency, quiescent duty cycle, and sensitivity; for system optimization ▪ Factory programmed sensitivity temperature coefficient	Original	PDF	A1356 A1356 transistor
A1356 transistor Abstract: 2SA1356 a1356 2SC3419 Text: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)	Original	PDF	2SA1356 2SC3419 A1356 transistor 2SA1356 a1356 2SC3419
A1356 transistor Abstract: 2SA1356 Text: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)	Original	PDF	2SA1356 2SC3419 A1356 transistor 2SA1356
A1356 transistor Abstract: 2SA1356 2SA1356 A1356 2SC3419 A1356 A135 Text: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)	Original	PDF	2SA1356 2SC3419 A1356 transistor 2SA1356 2SA1356 A1356 2SC3419 A1356 A135