IS46TR
Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
|
Original
|
IS43/46TR16128A/AL,
IS43/46TR82560A/AL
256Mx8,
128Mx16
cycles/64
cycles/32
60A/AL
78-ball
IS46TR
IS43TR82560A
DDR3 DRAM 2GB 128Mx16 96BALL FBGA
"2Gb DDR3 SDRAM"
|
PDF
|
circuit card assy input filter for miller 200 Dx
Abstract: 64 point radix 2 FFT LM318 list DSP101 74AS20 TTL radix-4 DIT FFT C code TLC32040C TMS320 TMS320C31 TMS320C32
Text: TMS320C3x GeneralĆPurpose Applications User’s Guide 1998 Digital Signal Processing Solutions Printed in U.S.A., January 1998 SDS SPRU194 TMS320C3x General-Purpose Applications User’s Guide Literature Number: SPRU194 January 1998 Printed on Recycled Paper
|
Original
|
TMS320C3x
SPRU194
TMS320C3x
circuit card assy input filter for miller 200 Dx
64 point radix 2 FFT
LM318 list
DSP101
74AS20 TTL
radix-4 DIT FFT C code
TLC32040C
TMS320
TMS320C31
TMS320C32
|
PDF
|
K4C560838C-TCB
Abstract: No abstract text available
Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM
|
Original
|
K4C5608/1638C
256Mb
Orga41
K4C560838C-TCB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K4C89093AF Target 288Mb Network-DRAM-II Specification Version 0.2 - 1 - REV. 0.2 Aug. 2003 K4C89093AF Target Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.
|
Original
|
K4C89093AF
288Mb
800Mbps
400Mhz)
K4C89363AF-GC
8K/32ms
667Mbps/pin
333MHz,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K4C89183AF 288Mb Network-DRAM-II Specification Version 0.11 - 1 - REV. 0.11 Apr. 2003 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.
|
Original
|
K4C89183AF
288Mb
800Mbps
400Mhz)
8K/32ms
800Mbps/pin
400MHz,
667Mbps/pin
333MHz,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
|
Original
|
IS43/46TR16128A,
IS43/46TR16128AL,
IS43/46TR82560A,
IS43/46TR82560AL
256Mx8,
128Mx16
cycles/64
cycles/32
1333MT/s
IS46TR82560AL
|
PDF
|
K4C89183AF
Abstract: No abstract text available
Text: K4C89183AF Network-DRAM-II Specification Version 0.01 - 1 - REV. 0.01 Nov. 2002 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.
|
Original
|
K4C89183AF
304-WORDS
18-BITS
K4C89183AF
400mil
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K4C89093AF Preliminary 288Mb Network-DRAM-II Specification Version 0.4 - 1 - REV. 0.4 Jul. 2004 K4C89093AF Preliminary Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.
|
Original
|
K4C89093AF
288Mb
800Mbps
400Mhz)
8K/32ms
667Mbps/pin
333MHz,
533Mbps
266MHz,
|
PDF
|
TMS320
Abstract: TMS320C30 TMS320C31 TMS320C32 SPRU053
Text: TMS320C32 How TMS320 Tools Interact With the TMS320C32’s Enhanced Memory Interface Pedro R. Gelabert Digital Signal Processing Products – Semiconductor Group SPRA048 November 1995 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any
|
Original
|
TMS320C32
TMS320
TMS320C32
SPRA048
free16(
malloc16(
calloc16(
realloc16(
TMS320C30
TMS320C31
SPRU053
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K4C5608/1638M 256Mb FCRAM FCRAM Specification Version 0.0 - 1 - REV. 0.0 Oct. 2001 K4C5608/1638M 256Mb FCRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Notice : FCRAM is a Trademark of Fujitsu Limited, Japen - 2 - REV. 0.0 Oct. 2001 K4C5608/1638M
|
Original
|
K4C5608/1638M
256Mb
200MHz)
154MHz
256Mx8
K4C560838M-TCB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K4C89183AF Network-DRAM-II Specification Version 0.01 - 1 - REV. 0.01 Nov. 2002 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.
|
Original
|
K4C89183AF
304-WORDS
18-BITS
K4C89183AF
8K/32ms
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM
|
Original
|
K4C5608/1638C
256Mb
366Mbps/pin
183MHz)
256Mb
|
PDF
|
TMS320C32
Abstract: SPRU031D TMS320 TMS320C30 TMS320C31 C32BOOT SPRU031
Text: TMS320C32 Addendum to the TMS320C3x User's Guide User’s Guide 1995 Digital Signal Processing Products Printed in U.S.A., March 1995 SPRU132B User’s Guide TMS320C32 Addendum to the TMS320C3x User's Guide 1995 TMS320C32 User’s Guide Addendum to the TMS320C3x User’s Guide
|
Original
|
TMS320C32
TMS320C3x
SPRU132B
TMS320C32
SPRU031D
TMS320
TMS320C30
TMS320C31
C32BOOT
SPRU031
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IS43/46TR16128B, IS43/46TR16128BL, IS43/46TR82560B, IS43/46TR82560BL 256Mx8, 128Mx16 2Gb DDR3 SDRAM PRELIMINARY INFORMATION OCTOBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
|
Original
|
IS43/46TR16128B,
IS43/46TR16128BL,
IS43/46TR82560B,
IS43/46TR82560BL
256Mx8,
128Mx16
cycles/64
cycles/32
1333MT/s
IS46TR82560BL
|
PDF
|
|
|
lm814
Abstract: ID32-001
Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR
|
OCR Scan
|
TC59LM814/06BFT-22
TC59LM814/06BFT
TC59LM814BFT
304-words
TC59LM806BFT
LM814/06B
FT-22
lm814
ID32-001
|
PDF
|
stk 442 -130
Abstract: xc68hc711 XC68HC711D3 M68HC711D3 C45A M68HC11EVM MC68HC11 MC68HC711D3 ic stk 441 EEPR
Text: MC68HC711D3/D Rev. 1 MC68HC711D3 TECHNICAL DATA MOTOROLA MC68HC711D3 HCMOS MICROCONTROLLER UNIT Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out
|
OCR Scan
|
mc68hc711d3/d
MC68HC711D3
suitabilitMC68HC711D3
MC68HC711D3/D
1ATX22547-4
stk 442 -130
xc68hc711
XC68HC711D3
M68HC711D3
C45A
M68HC11EVM
MC68HC11
MC68HC711D3
ic stk 441
EEPR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DS1613D DALLAS DS1613D Partitioned SmartSocket 1M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Accepts standard 128K x 8, CMOS static RAM | Vcc A16 31 1 A15 A14 301 NC | WE 28 1 A13 32 • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data
|
OCR Scan
|
DS1613D
DS1613D
32-PIN
|
PDF
|
ZUA15
Abstract: ZUA12
Text: HM62W1400H Series 4194304-word x 1-bit High Speed CMOS Static RAM HITACHI ADE-203-773 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W1400H is an asyncronous high speed static RAM organized as 4-Mword x 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process and high speed circuit
|
OCR Scan
|
HM62W1400H
4194304-word
ADE-203-773
400-mil
32-pin
ns/12
ns/15
D-85622
ZUA15
ZUA12
|
PDF
|
HM6207HLP-35
Abstract: HM6207HLP-45
Text: HM6207H Series 262,144-word x 1-bit High Speed CMOS Static RAM HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Features • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 |iW (typ)
|
OCR Scan
|
HM6207H
144-word
24-pin
ADE-203Rev.
HM6207HP-25
HM6207HP-35
HM6207HP-45
HM6207HLP-25
HM6207HLP-35
HM6207HLP-45
|
PDF
|
manual for Misa
Abstract: ruy 1015
Text: AMD£I Am486 DX/DX2 Microprocessor Hardware Reference Manual AMD's Marketing Communications Department specifies environmentally sound agricultural irks and recycled papers, making this book highly recyclable. Am486™DX/DX2 Microprocessor Hardware Reference
|
OCR Scan
|
Am486TMDX/DX2
for088-3453
Ban-3M-3/97-3
7965A
manual for Misa
ruy 1015
|
PDF
|
lm814
Abstract: C1948
Text: TOSHIBA TENTATIVE TC59LM814/06BFT-22,-24,-30 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR
|
OCR Scan
|
TC59LM814/06BFT-22
304-WORDSx4BANKSx
16-BITS
608-WORDSX4BANKSX8-BITS
TC59LM814/06BFT
TC59LM814BFT
304-wordsX4
TC59LM806BFT
lm814
C1948
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A TC59LM814/06/02BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM
|
OCR Scan
|
TC59LM814/06/02BFT-22
TC59LM814/06/02BFT
TC59LM814BFT
304-words
TC59LM806BFT
TC59LM802BFT
LM814/06/02
|
PDF
|
lm814
Abstract: cyble thelia TC59 A14A9
Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR
|
OCR Scan
|
LM814/06B
FT-22
304-WORDSX4BANKSX16-BITS
608-WORDSX4BANKSX8-BITS
TC59LM814/06BFT
TC59LM814BFT
304-wordsX
TC59LM806BFT
lm814
cyble
thelia
TC59
A14A9
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O S H IB A TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06CFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR
|
OCR Scan
|
TC59LM814/06CFT-50
304-WORDSX4BANKSX
16-BITS
608-WORDSX4BANKSX8-BITS
TC59LM814/06CFT
TC59LM814CFT
304-wordsX4
TC59LM806CFT
|
PDF
|