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TTM Technologies A150N50X4B RF ATTENUATOR 50OHM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	A150N50X4B	Bag			1,000	1 - 10 - 100 - 1000 $2.34724 10000 $2.34724	Buy Now
Mouser Electronics	A150N50X4B		790			1 $4.36 10 $3.94 100 $2.94 1000 $2.11 10000 $2.07	Buy Now
Richardson RFPD	A150N50X4B		31		1	1 $4.06 10 $4.06 100 $3.63 1000 $2.18 10000 $2.18	Buy Now
	A150N50X4B				1,000	1 - 10 - 100 - 1000 $2.18 10000 $2.18	Buy Now
TTM Technologies A150N50X4C RF ATTENUATOR 50OHM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	A150N50X4C	Bag				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Richardson RFPD	A150N50X4C				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTM Technologies A150N50X4E High Frequency/RF Resistors
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	A150N50X4E					1 - 10 - 100 - 1000 $1.83 10000 $1.83	Get Quote
Richardson RFPD	A150N50X4E				1,000	1 - 10 - 100 - 1000 $1.95 10000 $1.95	Buy Now

A150N50X4 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
A150N50X4B		Anaren	Chip Termination 150 Watts, 50W		Original	PDF
A150N50X4C		Anaren	RF/IF and RFID - Attenuators - RF ATTENUATOR 50OHM		Original	PDF
A150N50X4E		Anaren	RF/IF and RFID - Attenuators - RF ATTENUATOR 50OHM		Original	PDF

A150N50X4 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Model A150N50X4C Chip Termination 150 Watts, 50Ω Description The A150N50X4C is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination dissipates 150W and has a return loss of 25dB to	Original	A150N50X4C A150N50X4C A150N 50X4C	PDF
Power Combiners Abstract: A150N50X4B Text: Model A150N50X4B Chip Termination 150 Watts, 50Ω Description The A150N50X4B is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such	Original	A150N50X4B A150N50X4B Power Combiners	PDF
A150N50X4E Abstract: No abstract text available Text: Model A150N50X4E Chip Termination 150 Watts, 50Ω Description The A150N50X4E is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such	Original	A150N50X4E A150N50X4E MIL-E-5400.	PDF
Untitled Abstract: No abstract text available Text: Model A150N50X4C Chip Termination 150 Watts, 50Ω Description The A150N50X4C is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). It is well suited to all cellular frequency bands such as; AMPS,	Original	A150N50X4C A150N50X4C MIL-E-5400. A150N 50X4C	PDF
Untitled Abstract: No abstract text available Text: ROHS Compliant Model A150N50X4A Chip Termination 150 Watts, 50Ω Description The A150N50X4A is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such	Original	A150N50X4A A150N50X4A	PDF
Untitled Abstract: No abstract text available Text: Model A150N50X4C RoHS Compliant Chip Termination 150 Watts, 50Ω Description The A150N50X4C is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination dissipates 150W and has a return loss of 25dB to	Original	A150N50X4C A150N50X4C	PDF
Untitled Abstract: No abstract text available Text: Model A150N50X4E Chip Termination 150 Watts, 50Ω Description The A150N50X4E is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such	Original	A150N50X4E A150N50X4E MIL-E-5400d	PDF
A150N50X4B Abstract: No abstract text available Text: Model A150N50X4B Pb Chip Termination 150 Watts, 50Ω Description The A150N50X4B is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such	Original	A150N50X4B A150N50X4B A150N50X4	PDF
Untitled Abstract: No abstract text available Text: Model A150N50X4E Chip Termination 150 Watts, 50Ω Description The A150N50X4E is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such	Original	A150N50X4E A150N50X4E	PDF
A150N50X4B Abstract: No abstract text available Text: Model A150N50X4B Chip Termination 150 Watts, 50Ω Description The A150N50X4B is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such	Original	A150N50X4B A150N50X4B MIL-E-5400.	PDF
Untitled Abstract: No abstract text available Text: Model A150N50X4B Pb Chip Termination 150 Watts, 50Ω Description The A150N50X4B is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such	Original	A150N50X4B A150N50X4B A150N50X4	PDF
2.4ghz lnb Abstract: 1M710S 1G1304-30 XC0900A-03S xc1900a-03s BD2425J50100A00 3A425 B0011E75300A00 diplexer gsm umts 900 stripline power combiner splitter Text: Selection Matrix 3 dB Hybrid Couplers Model Number Package Size [Inch] Freq. Band [MHz] Ins. loss [dB max] Isolation [dB min] VSWR [max:1] ± Amp. Bal. [dB max] 90 ± Ph. Bal [deg. max] Avg. Power [W max] XC0450A-03 XC0450L-03	Original	XC0450A-03 XC0450L-03 XC0450E-03 1F1304-3 XC0900P-03 XC0900E-03 XC0900A-03 XC0900L-03 S03B888N3 XC1400P-03 2.4ghz lnb 1M710S 1G1304-30 XC0900A-03S xc1900a-03s BD2425J50100A00 3A425 B0011E75300A00 diplexer gsm umts 900 stripline power combiner splitter	PDF