TC58DAM72A1FT00
Abstract: TC58DVM72A1FT00 TC58DAM72F1FT00 TC58DVM72F1FT00 TC58DAM72A1X
Text: TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M u 8 BITS/8M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable
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TC58DVM72A1FT00/
TC58DVM72F1FT00
TC58DAM72A1FT00/
TC58DAM72F1FT00
128-MBIT
16BITS)
TC58DxM72x1xxxx
bytes/264
528-byte/264-words
TC58DAM72A1FT00
TC58DVM72A1FT00
TC58DAM72F1FT00
TC58DVM72F1FT00
TC58DAM72A1X
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TC58DVM72A1TG00
Abstract: No abstract text available
Text: TC58DVM72A1TG00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M x 8 BITS CMOS NAND E2PROM DESCRIPTION Lead-Free The device is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device uses single power supply (2.7 V to 3.6
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TC58DVM72A1TG00
128-MBIT
528-byte
TC58DVM72A1TG00
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TC58DVM82A1XBJ1
Abstract: No abstract text available
Text: TC58DVM82A1XBJ1 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT 32M u 8 BITS CMOS NAND E2PROM DESCRIPTION The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 2048 blocks. The device uses single power supply (2.7 V to 3.6
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TC58DVM82A1XBJ1
256-MBIT
528-byte
TC58DVM82A1XBJ1
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TSOP 48 Package nand memory toshiba
Abstract: TC58DVM72A1FT00 TC58DV TC58DVM72A1F
Text: TC58DVM72A1FT00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M x 8 BITS CMOS NAND E2PROM DESCRIPTION The device is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device uses single power supply (2.7 V to 3.6
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TC58DVM72A1FT00
128-MBIT
528-byte
TSOP 48 Package nand memory toshiba
TC58DVM72A1FT00
TC58DV
TC58DVM72A1F
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PDF
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TC58DVM82A1FT00
Abstract: TC58DAM82A1FT00 TC58DAM82F1FT00 TC58DVM82F1FT00
Text: TC58DVM82A1FT00/ TC58DVM82F1FT00 TC58DAM82A1FT00/ TC58DAM82F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT 32M u 8 BITS/16M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM82x1xxxx is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable
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TC58DVM82A1FT00/
TC58DVM82F1FT00
TC58DAM82A1FT00/
TC58DAM82F1FT00
256-MBIT
BITS/16M
16BITS)
TC58DxM82x1xxxx
bytes/264
TC58DVM82A1FT00
TC58DAM82A1FT00
TC58DAM82F1FT00
TC58DVM82F1FT00
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TC58NS128ADC
Abstract: SmartMediaTM Physical Format Specifications SmartMedia Logical Format ID maker code
Text: TC58NS128ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 128-MBIT 16M ´ 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia ) DESCRIPTION The TC58NS128A is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable
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TC58NS128ADC
128-MBIT
TC58NS128A
528-byte
528-byte
TC58NS128ADC
SmartMediaTM Physical Format Specifications
SmartMedia Logical Format ID maker code
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TC58NS256ADC
Abstract: No abstract text available
Text: TC58NS256ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT 32M ´ 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia ) DESCRIPTION The TC58NS256A is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable
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TC58NS256ADC
256-MBIT
TC58NS256A
528-byte
528-byte
TC58NS256ADC
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TS048-48-Pin
Abstract: S29AS008J spansion obsolescence
Text: Am29SL400C Data Sheet Retired Product Am29BDS323D Cover Sheet This product has been retired and is not recommended for designs. For new and current designs, S29AS008J supercedes Am29SL400C. This is the factory-recommended migration path. Please refer to the S29AS008J data sheet for specifications
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Am29SL400C
Am29BDS323D
S29AS008J
TS048-48-Pin
spansion obsolescence
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TC58NS256BDC
Abstract: ssfdc
Text: TC58NS256BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT 32M u 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia ) DESCRIPTION The TC58NS256B is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable
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TC58NS256BDC
256-MBIT
TC58NS256B
528-byte
528-byte
TC58NS256BDC
ssfdc
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SmartMediaTM Physical Format Specifications
Abstract: ssfdc ETC 527 TC58NS128BDC TC58NS256BDC
Text: TC58NS128BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 128-MBIT 16M u 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia ) DESCRIPTION The TC58NS128B is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable
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TC58NS128BDC
128-MBIT
TC58NS128B
528-byte
528-byte
SmartMediaTM Physical Format Specifications
ssfdc
ETC 527
TC58NS128BDC
TC58NS256BDC
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TC58256AFT
Abstract: No abstract text available
Text: TC58256AFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 256-MBIT 32M x 8 BITS CMOS NAND E PROM DESCRIPTION The TC58256A is a single 3.3 V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device has a 528-byte
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TC58256AFT
256-MBIT
TC58256A
528-byte
528-byte
TC58256AFT
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TC58V64BFT
Abstract: No abstract text available
Text: TC58V64BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64-MBIT 8M ´ 8 BITS CMOS NAND E PROM DESCRIPTION The TC58V64B is a single 3.3 V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes ´ 16 pages ´ 1024 blocks. The device has a 528-byte
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TC58V64BFT
64-MBIT
TC58V64B
528-byte
528-byte
TC58V64BFT
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TC58128AFT
Abstract: No abstract text available
Text: TC58128AFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 128-MBIT 16M x 8 BITS CMOS NAND E PROM DESCRIPTION The TC58128A is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device has a 528-byte
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TC58128AFT
128-MBIT
TC58128A
528-byte
528-byte
TC58128AFT
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DIN527
Abstract: No abstract text available
Text: TC58512FT TENTATIVE TOSHIBA MOSDIGITAL INTEGRATEDCIRCUIT SILICONGATE CMOS 512-MBIT 64M x 8BITS CMOS NAND E2PROM DESCRIPTION The TC58512 is a single .3V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.
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TC58512FT
512-MBIT
TC58512
528-byte
DIN527
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um61256fs 15
Abstract: um61256 um61256fs TI07 Hitachi DSA0088 um61256f tag 136 HB66C6464BB Nippon capacitors
Text: Preliminary HB66C6464BB Series 64K x 64 bits Synchronous Fast Static RAM Module with TAG, Burst Counter and Pipelined Data Output Rev. 0.0 Feb. 02, 1996 Description The HB66C6464BB has been developed as an optimized cache memory solution for 8 Bytes processor application.
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HB66C6464BB
HM62C3232FP)
256Kbit
UM61256FS
O-85622
SL66YA
um61256fs 15
um61256
TI07
Hitachi DSA0088
um61256f
tag 136
Nippon capacitors
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um61256
Abstract: um61256fs 15 TI07 um61256fs Hitachi DSA0088 Nippon capacitors HM62C3232
Text: Preliminary HB66C6464BA Series 64K x 64 bits Synchronous Fast Static RAM Module with TAG, Burst Counter and Pipelined Data Output Rev. 0.0 Dec. 29, 1995 Description The HB66C6464BA has been developed as an optimized cache memory solution for 8 Bytes processor application.
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HB66C6464BA
HM62C3232FP)
256Kbit
UM61256FS
D-85622
SL68YA
um61256
um61256fs 15
TI07
Hitachi DSA0088
Nippon capacitors
HM62C3232
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TC581282A
Abstract: TC581282AXB NU 31
Text: TC581282AXB TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 128-MBIT 16M x 8 BITS CMOS NAND E PROM DESCRIPTION The TC581282A is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device has a 528-byte
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TC581282AXB
128-MBIT
TC581282A
528-byte
528-byte
TC581282AXB
NU 31
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TC58NS256ADC
Abstract: No abstract text available
Text: TC58NS256ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT 32M x 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia ) DESCRIPTION The TC58NS256A is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable
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TC58NS256ADC
256-MBIT
TC58NS256A
528-byte
528-byte
TC58NS256ADC
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PDF
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Untitled
Abstract: No abstract text available
Text: HI TA C H I / L O G I C / A R R A Y S / M E H SIE D • MMTbEOa GGlTbflT 7Db ■ H I T S HN62414 Series HN62434 Series T-46-13-15 4M 256K x 16-bit and (512K x 8-bit) Mask ROM ■ DESCRIPTION The Hitachi HN62414/HN62434 Series is a 16-Megabit CMOS Mask Programmable Read Only Memory organized as 262,144 x
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HN62414
HN62434
T-46-13-15
16-bit)
HN62414/HN62434
16-Megabit
16-bit
40-pin
40-lead
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TC58FVT400FT
Abstract: VT400F B400F
Text: TO SHIBA TC58FVT400/B400F/FT-85#-10#-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4M 512 K X 8 / 256 K X 16 BIT CMOS FLASH MEMORY DESCRIPTION The TC58FVT400/B400 is a 4,194,304 - bits, 3.0 Volt - only Electrically E rasab le and Program m able
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OCR Scan
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TC58FVT400/B400F/FT-85
TC58FVT400/B400
OP44-P-600-1
48-P-1220-0
TC58FVT400FT
VT400F
B400F
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Untitled
Abstract: No abstract text available
Text: HN62414 Series-HN62434 Series 4M 256K x 16-bit and (512K x 8-bit) Mask ROM • DESCRIPTION The Hitachi HN62414/HN62434 Series is a 16-Megabit CMOS Mask Programmable Read Only Memory organized as 262,144 x 16-bit and 524,288 x 8-bit. The low power consumption of this device makes it ideal for
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OCR Scan
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HN62414
Series---------------HN62434
16-bit)
HN62414/HN62434
16-Megabit
16-bit
40-pin
40-lead
44-lead
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TC58FVT400/B400F/FT-85,-10,-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-MBIT 512K X 8 BITS / 256K X 16 BITS CMOS FLASH M EM ORY DESCRIPTION The TC58FVT400/B400 is a 4,194,304 - bit, 3.0-V read-only electrically erasable and programmable
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OCR Scan
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TC58FVT400/B400F/FT-85
TC58FVT400/B400
44-pin
100//S
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mxab
Abstract: IX-29
Text: _ _ _ _ _ _ _ _ _M X 2 FEATURES • • • • • • • • • 9 F8 1 OO 8 M - B r r t 'IM x 8 / 5 * 1 H K x I S C M O S S IN G L E V O L T A G E F L A S H E E P R O M 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles
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100/120/150ns
-100mA
100mA
100ns
mxab
IX-29
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49f002
Abstract: No abstract text available
Text: Features • Single-voltage Operation - 5V Read - 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Architecture - One 16K Byte Boot Block with Programming Lockout - Two 8K Byte Parameter Blocks - Two Main Memory Blocks 96K, 128K Bytes
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49F002
32-lead,
AT49F002
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