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    A18Q Price and Stock

    Nexperia BZT52H-A18-QX

    BZT52H-A18-Q/SOD123F/SOD2
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    DigiKey BZT52H-A18-QX Digi-Reel 6,907 1
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    • 10 $0.333
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    BZT52H-A18-QX Cut Tape 6,907 1
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    • 10 $0.333
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    BZT52H-A18-QX Reel 6,000 3,000
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    Avnet Americas BZT52H-A18-QX Reel 8 Weeks 6,000
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    Mouser Electronics BZT52H-A18-QX 5,670
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    • 100 $0.226
    • 1000 $0.16
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    TTI BZT52H-A18-QX Reel 6,000
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    Avnet Silica BZT52H-A18-QX 10 Weeks 3,000
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    EBV Elektronik BZT52H-A18-QX 10 Weeks 3,000
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    Nexperia BZX384-A18-QX

    BZX384-A18-Q/SOD323/SOD2
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    DigiKey BZX384-A18-QX Cut Tape 2,625 1
    • 1 $0.5
    • 10 $0.333
    • 100 $0.5
    • 1000 $0.15984
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    Avnet Americas BZX384-A18-QX Reel 6 Weeks 6,000
    • 1 -
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    • 10000 $0.10703
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    Mouser Electronics BZX384-A18-QX 3,027
    • 1 $0.49
    • 10 $0.333
    • 100 $0.226
    • 1000 $0.16
    • 10000 $0.113
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    TTI BZX384-A18-QX Reel 6,000
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    Avnet Silica BZX384-A18-QX 8 Weeks 3,000
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    EBV Elektronik BZX384-A18-QX 8 Weeks 3,000
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    Festo GRLA-1-8-QB-1-4-U

    ONE-WAY FLOW CONTROL VALVE
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    DigiKey GRLA-1-8-QB-1-4-U Bulk 20 1
    • 1 $26.98
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    Festo GRLA-1-8-QB-5-32-U

    ONE-WAY FLOW CONTROL VALVE
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    DigiKey GRLA-1-8-QB-5-32-U Bulk 14 1
    • 1 $26.98
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    Festo GRLA-1-8-QS-8-RS-D

    ONE-WAY FLOW CONTROL VALVE
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    DigiKey GRLA-1-8-QS-8-RS-D Bulk 14 1
    • 1 $27.74
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    • 100 $27.74
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    Find more A18Q price and stock on Findchips.com

    A18Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CA-180

    Abstract: WJ-CA18
    Text: WJ-A18Q/SMA180 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH REVERSE ISOLATION: 22 dB TYP. ♦ HIGH OUTPUT POWER: +18 dBm (TYP.) Outline Drawings Specifications* Characteristics Frequency (Min.) Small Signal Gain (Min.)


    OCR Scan     		PDF WJ-A18Q/SMA180 DIME10 CA-180 WJ-CA18

    Untitled

    Abstract: No abstract text available
    Text: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SM JS851A-NO VEM BER 1997 - REVISED MARCH 1998 • Organization . . . 1048576 By 8 Bits 524288 By 16 Bits • Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks


    OCR Scan     		PDF TMS28F008Axy TMS28F800Axy 8-BIT/524 16-BIT JS851A-NO 96K-Byte/48K-Word 128K-Byte/64K-Word 16K-Byte/8K-Word 28F008Axy70 28F008Axy80

    Untitled

    Abstract: No abstract text available
    Text: HM62W8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-904B (Z) Rev. 1.0 Dec. 17, 1998 Description The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 jam Hi-CMOS process


    OCR Scan     		PDF HM62W8512B 512-kword ADE-203-904B 525-mil 400-mil time8512B

    M29F800A3BT12

    Abstract: m29f800a3br 29F800A
    Text: Order this document by M29F800A3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A3 M29F800A2 8M CMOS Flash Memory Organization: 524,288 words x 16 bits 1,048,576 words x 8 bits Power Supply Voltage: V q c = 3.3 V ± 0.3 V Access Time: M29F800A3—80 = 80 ns Max


    OCR Scan     		PDF M29F800A3/D M29F800A3-- M29F80QA M29F800A3-12 M29F800A3 M29F800A2 48-Pin M29F800A3U M29F800A3B M29F800A3BT12 m29f800a3br 29F800A

    HM628512ALPI-7

    Abstract: a12q A17a DP-32 HM628512ALFPI-7 HM628512ALFPI-8 HM628512ALPI-8 HM628512ALTTI-7 Hitachi Scans-001
    Text: HM628512AI Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-791 Z Preliminary Rev. 0.0 Jun. 20, 1997 D escription T he Hitachi HM 628512A I is a 4-M bit static RAM organized 512-kw ord x 8-bit. It realizes higher density, higher perform ance and low pow er consum ption by em ploying 0 .5 p m H i-C M O S process technology. The


    OCR Scan     		PDF HM628512AI 524288-word ADE-203-791 M628512AI 512-kword 525-mil 400-mil 600-mil D-85622 HM628512ALPI-7 a12q A17a DP-32 HM628512ALFPI-7 HM628512ALFPI-8 HM628512ALPI-8 HM628512ALTTI-7 Hitachi Scans-001

    ALY 34

    Abstract: 28f800 TMS2800 R-PDSO-G44 Package A10q ALY-34
    Text: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES S M JS 851A - N O VEM BER 1997 - REVISED M ARCH 1998 Organization . . . 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks


    OCR Scan     		PDF TMS28F008Axy TMS28F800Axy 8-BIT/524 16-BIT SMJS851A 96K-Byte/48K-Word 128K-Byte/64K-Word 16K-Byte/8K-Word 28F008Axy70 28F008Axy80 ALY 34 28f800 TMS2800 R-PDSO-G44 Package A10q ALY-34

    BFJ 64

    Abstract: No abstract text available
    Text: 32 0 S 5 - L _ S 5 H- L 7 / 1 5 / 9 8 7 : 5 7 PM P age 1 SHARP LH28F320S5-L/S5H-L LH28F320S5-L/S5H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION High performance read access time The LH 28F320S 5-L/S5H -L flash m em ories with


    OCR Scan     		PDF LH28F320S5-L/S5H-L 28F320S 28F320S5XX SSOP056-P-0600) FBGA080/064-P-0818) BFJ 64

    29f8008

    Abstract: 29F800
    Text: TMS29F800T, TMS29F8O0B 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES • Single Power Supply Supports 5 V ±10% Read/Write Operation Organization. . . 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector


    OCR Scan     		PDF SMJS8358 TMS29F800T, TMS29F8O0B 16-BIT 16K-Byte/One 32K-Byte/16K-Word 64K-Byte/32K-Word 77S51-1443 TM329F8Q0T, TMS29F800B 29f8008 29F800

    HM628512BLP-5SL

    Abstract: A17a DP-32 HM628512B HM628512BLFP-5 HM628512BLFP-7 HM628512BLP-5 HM628512BLP-7 HM628512BLP-7SL HM628512BLTT7
    Text: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process technology.


    OCR Scan     		PDF HM628512B 512-kword ADE-203-903B 525-mil 400-mil 600-mil HM628512BLP-5SL A17a DP-32 HM628512BLFP-5 HM628512BLFP-7 HM628512BLP-5 HM628512BLP-7 HM628512BLP-7SL HM628512BLTT7

    Untitled

    Abstract: No abstract text available
    Text: HM62V8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-905 (Z) Preliminary, Rev. 0.0 April 24, 1998 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process technology.


    OCR Scan     		PDF HM62V8512B 512-kword ADE-203-905 525-mil 400-mil

    Untitled

    Abstract: No abstract text available
    Text: TMS28F008Axy TMS28F800Axy 8 3 8 8 6 0 8 BOOT-BLOCK FLASH MEMORIES _ * * 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte Parameter Blocks - One 96K-Byte Main Block - Seven 128K-Byte Main Blocks - One 16K-Byte Protected Boot Block


    OCR Scan     		PDF TMS28F008Axy TMS28F800Axy SMJS851 96K-Byte 128K-Byte 16K-Byte 44-Pin 40-Pin 48-Pin 48-Ball

    a18e

    Abstract: No abstract text available
    Text: Preliminary I V t I C MXS3C3S11 3SM-Bit Mask ROM 8/16 Bit Output] FEATURES • Bit organization • Fast access time • Page Size • Current • Supply voltage • Package ORDER INFORMATION 4M x 8 (byte mode 2M x 16 (word mode) Random access: 100ns (max.)


    OCR Scan     		PDF MXS3C3S11 100ns PM0258 MX23C3211MC-10 MX23C3211TC-10 MX23C3211RC-10 23C3211-10 a18e

    Untitled

    Abstract: No abstract text available
    Text: MX23C8100 MXIC 8M-Bit Mask ROM 8/16 Bit Output FEATURES ORDER INFORMATION Part No. Access Time Package MX23C8100MC-10 100ns 44 pin SOP MX23C8100MC-12 120ns 44 pin SOP MX23C8100MC-15 150ns 44 pin SOP MX23C8100PC-10 100ns 42 pin DIP Standby: 50nA MX23C8100PC-12


    OCR Scan     		PDF MX23C8100 MX23C8100MC-10 100ns MX23C8100MC-12 120ns MX23C8100MC-15 150ns MX23C8100PC-10 MX23C8100PC-12

    Untitled

    Abstract: No abstract text available
    Text: NDCIC MXS3C3S1 □ 3 2 M -B it FEATURES M a s k R O M C B /1 6 B i t O u t p u t ORDER INFORMATION • Bit organization 4M x 8 byte mode) 2M x 16 (word mode) • Fast access time Random access: 100ns (max.) • Current Operating: 60mA Standby: 5|iA • Supply voltage


    OCR Scan     		PDF MX23C3210MC-10 100ns MX23C3210MC-12 120ns MX23C3210MC-15 150ns MX23C3210TC-12 MX23C3210TC-15

    A17E

    Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L
    Text: SHARP LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION • High performance read access time The LH 28F320S 3-L/S3H -L flash m em ories with Sm art 3 technology are high-density, low-cost,


    OCR Scan     		PDF LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 56-pin P056-ff' 80-ball LH28F320S3XX-L11 LH28F320S3XX-L14 SSOP056-P-0600) FBGA080/064-P-0818) A17E LH28F320S3H-L LH28F320S3-L

    A17E

    Abstract: 56-PIN
    Text: SHARP LH28F320S5-L/S5H-L LH28F320S5-L/S5H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION • High performance read access time The LH 28F320S 5-L/S5H -L flash m em ories with Sm art 5 technology are high-density, low-cost,


    OCR Scan     		PDF LH28F320S5-L/S5H-L LH28F320S5-L/S5H-L 56-pin P056--F0600) 80-ball W64-Pili818) LH28F320S5XX-L90 LH28F320S5XX-L12 SSOP056-P-0600) A17E

    Untitled

    Abstract: No abstract text available
    Text: HM62W8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-904 (Z) Preliminary, Rev. 0.0 April 24, 1998 Description The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process


    OCR Scan     		PDF HM62W8512B 512-kword ADE-203-904 525-mil 400-mil

    A16Q2

    Abstract: No abstract text available
    Text: HM62W8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-904B (Z) Rev. 1.0 Dec. 17, 1998 Description The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 ( Am Hi-CMOS process


    OCR Scan     		PDF HM62W8512B 512-kword ADE-203-904B 525-mil 400-milTSOP A16Q2

    Untitled

    Abstract: No abstract text available
    Text: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS851A - NOVEMBER 1997 - REVISED MARCH 1998 • Organization . . . 1048576 By 8 Bits 524288 By 16 Bits • Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks


    OCR Scan     		PDF TMS28F008Axy TMS28F800Axy 8-BIT/524 16-BIT SMJS851A 96K-Byte/48K-Word 128K-Byte/64K-Word 16K-Byte/8K-Word 28F008Axy70 28F008Axy80

    29f8008

    Abstract: 524288X16
    Text: TMS29F800T, TMS29F800B 1048576 BY 8-BIT/524288 BY 16-BIT FLASH MEMORIES _SMJS8358- MAY 1997 - REVISED OCTOBER 1997 • • • • • • A • • • • Erase Suspend/Resume - Supports Reading Data From, or Programming Data to, a Sector Not Being Erased


    OCR Scan     		PDF TMS29F800T, TMS29F800B 8-BIT/524288 16-BIT SMJS8358- 16K-Byte/One 32K-Byte/16K-Word 64K-Byte/32K-Word 29f8008 524288X16

    AE3G

    Abstract: NOR Flash 1996 sector protect
    Text: TMS29LF800T, TMS29LF800B 1048576-BYTE BY 8-BIT/524288-WORD BY 16-BIT 8M-BIT FLASH MEMORIES S M J S 8 2 8 A - S E P T E M B E R 1996 - R E V IS E D MAY 1997 Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Erase Suspend/Resume - Supports Reading Data From, or


    OCR Scan     		PDF TMS29LF800T, TMS29LF800B 1048576-BYTE 8-BIT/524288-WORD 16-BIT 16K-Byte 32K-Byte 64K-Byte 4073307/B fl1bl72S AE3G NOR Flash 1996 sector protect