Untitled
Abstract: No abstract text available
Text: UM10747 SSL5015DB1127 - 120 V/9 W A19 non-isolated buck LED driver demo board Rev. 1 — 6 February 2014 User manual Document information Info Content Keywords SSL5015DB1127, SSL5015TE, LED driver, non-isolated buck typology, A19 applications, HSO8 package
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UM10747
SSL5015DB1127
SSL5015DB1127,
SSL5015TE,
SSL5015
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Untitled
Abstract: No abstract text available
Text: UM10860 SSL5231DB1245 120 V dimmable A19 demo board Rev. 1 — 8 January 2015 User manual Document information Info Content Keywords SSL5231DB1245, SSL5321T, dimmable, LED driver, buck-boost converter, A19 Abstract This user manual describes The SSL5231DB1245 demo board. The demo
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UM10860
SSL5231DB1245
SSL5231DB1245,
SSL5321T,
SSL5321T.
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PDF
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Non-isolated Buck LED Driver IC
Abstract: No abstract text available
Text: UM10749 SSL5018DB1125 - 230 V/9 W A19 non-isolated buck LED driver demo board Rev. 1 — 6 February 2014 User manual Document information Info Content Keywords SSL5018DB1125, SSL5018TE, LED driver, non-isolated buck typology, A19 applications, HSO8 package
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UM10749
SSL5018DB1125
SSL5018DB1125,
SSL5018TE,
SSL5018
SSL501information.
Non-isolated Buck LED Driver IC
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PDF
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A19 transistor
Abstract: A19-1 CA19-1 SMA19-1
Text: Cascadable Amplifier 10 to 1000 MHz A19-1 / SMA19-1 V3 Features Product Image • HIGH OUTPUT POWER: +22.5 dBm TYP. • HIGH THIRD ORDER I.P.: +35 dBm (TYP.) • MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Description The A19-1 RF amplifier is a discrete thin film hybrid design,
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A19-1
SMA19-1
MIL-STD-883
A19 transistor
CA19-1
SMA19-1
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A19 transistor
Abstract: A19-1 CA19-1 SMA19-1 CA191
Text: A19-1 / SMA19-1 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features Product Image • HIGH OUTPUT POWER: +22.5 dBm TYP. • HIGH THIRD ORDER I.P.: +35 dBm (TYP.) • MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Description The A19-1 RF amplifier is a discrete thin film hybrid design,
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A19-1
SMA19-1
MIL-STD-88sed
A19 transistor
CA19-1
SMA19-1
CA191
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PDF
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Untitled
Abstract: No abstract text available
Text: A19-1 / SMA19-1 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features Product Image • HIGH OUTPUT POWER: +22.5 dBm TYP. • HIGH THIRD ORDER I.P.: +35 dBm (TYP.) • MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Description The A19-1 RF amplifier is a discrete thin film hybrid design,
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A19-1
SMA19-1
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SMD A19
Abstract: IEC55015 A19 SMD transistor
Text: UM10702 SSL2109ADB1110 120 V 9 W A19 high PF isolated LED driver demo board Rev. 1.1 — 27 June 2013 User manual Document information Info Content Keywords SSL2109ADB1110, isolated, flyback, demo board, LED driver, LED, 9 W, A19 Abstract This document describes the performance, technical data and the
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UM10702
SSL2109ADB1110
SSL2109ADB1110,
SMD A19
IEC55015
A19 SMD transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: A19-1/SMA19-1 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH OUTPUT POWER: +22.5 dBm TYP. · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) · MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency
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A19-1/SMA19-1
99Nominal.
A19-1
SMA19-1
CA19-1
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PDF
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CA19-1
Abstract: SMA19-1 A19-1 SMA19
Text: A19-1/SMA19-1 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH OUTPUT POWER: +22.5 dBm TYP. · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) · MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency
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A19-1/SMA19-1
A19-1
SMA19-1
CA19-1
CA19-1
SMA19-1
A19-1
SMA19
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NCL30082
Abstract: No abstract text available
Text: AND9131/D Designing a LED Driver with the NCL30080/81/82/83 www.onsemi.com Introduction As LED lighting finds its way into low wattage applications, lamp designers are challenged for a variety of conflicting requirements. Size is often dictated by the incumbent lamp and fixture size whether it’s A19, GU10,
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AND9131/D
NCL30080/81/82/83
NCL3008X
NCL30082
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transistor 649A
Abstract: No abstract text available
Text: User's Guide SNOA559B – October 2011 – Revised May 2013 AN-2127 LM3448 A19 Edison Retrofit Evaluation Board 1 Introduction This demonstration board highlights the performance of a LM3448 non-isolated LED driver solution that can be used to power a single LED string consisting of eight to twelve series connected LEDs from a 85
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SNOA559B
AN-2127
LM3448
transistor 649A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
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PD44321181,
32M-BIT
PD44321181
152-word
18-bit
PD44321361
576-word
36-bit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
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PD44321182,
32M-BIT
PD44321182
152-word
18-bit
PD44321362
576-word
36-bit
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M15958
Abstract: MARKING C75
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
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PD44321181,
32M-BIT
PD44321181
152-word
18-bit
PD44321361
576-word
36-bit
M15958
MARKING C75
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
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PD44321182,
32M-BIT
PD44321182
152-word
18-bit
PD44321362
576-word
36-bit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
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PD44321182,
32M-BIT
PD44321182
152-word
18-bit
PD44321362
576-word
36-bit
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transistor marking A19
Abstract: A6 marking
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The μPD44321181 is a 2,097,152-word by 18-bit and the μPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
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PD44321181,
32M-BIT
PD44321181
152-word
18-bit
PD44321361
576-word
36-bit
transistor marking A19
A6 marking
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The μPD44321182 is a 2,097,152-word by 18-bit and the μPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
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PD44321182,
32M-BIT
PD44321182
152-word
18-bit
PD44321362
576-word
36-bit
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PG-DSO-20
Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test
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PG-DSO-20
PG-RFP-10
H-34265-8
H-33265-8
H-30248-2
H-36248-2
H-33288-2
H-31248-2
H-37248-2
H-34288-2
PG-DSO-20
a1807
PTFA211801E
H-32259-2
lt 860
PTFA071701GL
ptfa072401fl
1800 ldmos
1805-1880
PTMA210452M
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HM624100HC
Abstract: HM624100HCJP-10 HM624100HCLJP-10 Hitachi DSA00316
Text: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
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HM624100HC
ADE-203-1198B
400-mil
32-pin
D-85622
D-85619
HM624100HCJP-10
HM624100HCLJP-10
Hitachi DSA00316
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WJ-A19-1
Abstract: WJ-CA19-1 WJA19
Text: WJ-A19-1 /SMA19-1 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22.5 dBm TYP. HIGH THIRD ORDER IP. +35 dBm (TYP.) MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Outline Drawings A19-1 0.200 (5.06) Specifications
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WJ-A19-1
/SMA19-1
A19-1
50-ohm
0007QQti
WJ-CA19-1
WJA19
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WJ-CA19-1
Abstract: No abstract text available
Text: uuU A19-1 /SMA19-1 W M BM KKm 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22.5 dBm TYP. HIGH THIRD ORDER I.P. +35 dBm (TYP.) MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Outline Drawings A19-1 Specifications
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A19-1
/SMA19-1
A19-1
50-ohm
WJ-CA19-1
WJ-A19-1
J1-4401
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PDF
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transistor TE 2198
Abstract: WJ-A19
Text: WJ-A19/SMA19 10 TO 1000 M HZ TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +21 dBm TYP. ♦ HIGH THIRD ORDER I P.: +34 dBm (TYP.) Outline Drawings Specifications5* A19 Typical Characteristics Guaranteed 0° to 50°C -54° to +85°C
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WJ-A19/SMA19
50-ohm
114mA
D0D700M
transistor TE 2198
WJ-A19
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PDF
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14549F
Abstract: itt 946 946-5D itt 9094 ITT 946-1D dtl logic gates 9094-5d ITT 9097 5D ITT DTL 944-5D
Text: ITT Sem iconductors Integrated C irc u its -D T L D T L Series L o g ic Elem ents The D T L fam ily is a com prehensive set of silicon m onolithic logic elements designed to cover a wide range of military and industrial applications. The basis of the fam ily is a diode-transistor
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20MHz.
14549F
itt 946
946-5D
itt 9094
ITT 946-1D
dtl logic gates
9094-5d
ITT 9097 5D
ITT DTL
944-5D
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