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    A19 TRANSISTOR Search Results

    A19 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A19 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UM10747 SSL5015DB1127 - 120 V/9 W A19 non-isolated buck LED driver demo board Rev. 1 — 6 February 2014 User manual Document information Info Content Keywords SSL5015DB1127, SSL5015TE, LED driver, non-isolated buck typology, A19 applications, HSO8 package


    Original     		PDF UM10747 SSL5015DB1127 SSL5015DB1127, SSL5015TE, SSL5015

    Untitled

    Abstract: No abstract text available
    Text: UM10860 SSL5231DB1245 120 V dimmable A19 demo board Rev. 1 — 8 January 2015 User manual Document information Info Content Keywords SSL5231DB1245, SSL5321T, dimmable, LED driver, buck-boost converter, A19 Abstract This user manual describes The SSL5231DB1245 demo board. The demo


    Original     		PDF UM10860 SSL5231DB1245 SSL5231DB1245, SSL5321T, SSL5321T.

    Non-isolated Buck LED Driver IC

    Abstract: No abstract text available
    Text: UM10749 SSL5018DB1125 - 230 V/9 W A19 non-isolated buck LED driver demo board Rev. 1 — 6 February 2014 User manual Document information Info Content Keywords SSL5018DB1125, SSL5018TE, LED driver, non-isolated buck typology, A19 applications, HSO8 package


    Original     		PDF UM10749 SSL5018DB1125 SSL5018DB1125, SSL5018TE, SSL5018 SSL501information. Non-isolated Buck LED Driver IC

    A19 transistor

    Abstract: A19-1 CA19-1 SMA19-1
    Text: Cascadable Amplifier 10 to 1000 MHz A19-1 / SMA19-1 V3 Features Product Image • HIGH OUTPUT POWER: +22.5 dBm TYP. • HIGH THIRD ORDER I.P.: +35 dBm (TYP.) • MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Description The A19-1 RF amplifier is a discrete thin film hybrid design,


    Original     		PDF A19-1 SMA19-1 MIL-STD-883 A19 transistor CA19-1 SMA19-1

    A19 transistor

    Abstract: A19-1 CA19-1 SMA19-1 CA191
    Text: A19-1 / SMA19-1 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features Product Image • HIGH OUTPUT POWER: +22.5 dBm TYP. • HIGH THIRD ORDER I.P.: +35 dBm (TYP.) • MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Description The A19-1 RF amplifier is a discrete thin film hybrid design,


    Original     		PDF A19-1 SMA19-1 MIL-STD-88sed A19 transistor CA19-1 SMA19-1 CA191

    Untitled

    Abstract: No abstract text available
    Text: A19-1 / SMA19-1 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features Product Image • HIGH OUTPUT POWER: +22.5 dBm TYP. • HIGH THIRD ORDER I.P.: +35 dBm (TYP.) • MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Description The A19-1 RF amplifier is a discrete thin film hybrid design,


    Original     		PDF A19-1 SMA19-1

    SMD A19

    Abstract: IEC55015 A19 SMD transistor
    Text: UM10702 SSL2109ADB1110 120 V 9 W A19 high PF isolated LED driver demo board Rev. 1.1 — 27 June 2013 User manual Document information Info Content Keywords SSL2109ADB1110, isolated, flyback, demo board, LED driver, LED, 9 W, A19 Abstract This document describes the performance, technical data and the


    Original     		PDF UM10702 SSL2109ADB1110 SSL2109ADB1110, SMD A19 IEC55015 A19 SMD transistor

    Untitled

    Abstract: No abstract text available
    Text: A19-1/SMA19-1 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH OUTPUT POWER: +22.5 dBm TYP. · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) · MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency


    Original     		PDF A19-1/SMA19-1 99Nominal. A19-1 SMA19-1 CA19-1

    CA19-1

    Abstract: SMA19-1 A19-1 SMA19
    Text: A19-1/SMA19-1 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH OUTPUT POWER: +22.5 dBm TYP. · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) · MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency


    Original     		PDF A19-1/SMA19-1 A19-1 SMA19-1 CA19-1 CA19-1 SMA19-1 A19-1 SMA19

    NCL30082

    Abstract: No abstract text available
    Text: AND9131/D Designing a LED Driver with the NCL30080/81/82/83 www.onsemi.com Introduction As LED lighting finds its way into low wattage applications, lamp designers are challenged for a variety of conflicting requirements. Size is often dictated by the incumbent lamp and fixture size whether it’s A19, GU10,


    Original     		PDF AND9131/D NCL30080/81/82/83 NCL3008X NCL30082

    transistor 649A

    Abstract: No abstract text available
    Text: User's Guide SNOA559B – October 2011 – Revised May 2013 AN-2127 LM3448 A19 Edison Retrofit Evaluation Board 1 Introduction This demonstration board highlights the performance of a LM3448 non-isolated LED driver solution that can be used to power a single LED string consisting of eight to twelve series connected LEDs from a 85


    Original     		PDF SNOA559B AN-2127 LM3448 transistor 649A

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PDF PD44321181, 32M-BIT PD44321181 152-word 18-bit PD44321361 576-word 36-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PDF PD44321182, 32M-BIT PD44321182 152-word 18-bit PD44321362 576-word 36-bit

    M15958

    Abstract: MARKING C75
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PDF PD44321181, 32M-BIT PD44321181 152-word 18-bit PD44321361 576-word 36-bit M15958 MARKING C75

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PDF PD44321182, 32M-BIT PD44321182 152-word 18-bit PD44321362 576-word 36-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PDF PD44321182, 32M-BIT PD44321182 152-word 18-bit PD44321362 576-word 36-bit

    transistor marking A19

    Abstract: A6 marking
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The μPD44321181 is a 2,097,152-word by 18-bit and the μPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PDF PD44321181, 32M-BIT PD44321181 152-word 18-bit PD44321361 576-word 36-bit transistor marking A19 A6 marking

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The μPD44321182 is a 2,097,152-word by 18-bit and the μPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PDF PD44321182, 32M-BIT PD44321182 152-word 18-bit PD44321362 576-word 36-bit

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PDF PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M

    HM624100HC

    Abstract: HM624100HCJP-10 HM624100HCLJP-10 Hitachi DSA00316
    Text: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing


    Original     		PDF HM624100HC ADE-203-1198B 400-mil 32-pin D-85622 D-85619 HM624100HCJP-10 HM624100HCLJP-10 Hitachi DSA00316

    WJ-A19-1

    Abstract: WJ-CA19-1 WJA19
    Text: WJ-A19-1 /SMA19-1 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22.5 dBm TYP. HIGH THIRD ORDER IP. +35 dBm (TYP.) MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Outline Drawings A19-1 0.200 (5.06) Specifications


    OCR Scan     		PDF WJ-A19-1 /SMA19-1 A19-1 50-ohm 0007QQti WJ-CA19-1 WJA19

    WJ-CA19-1

    Abstract: No abstract text available
    Text: uuU A19-1 /SMA19-1 W M BM KKm 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22.5 dBm TYP. HIGH THIRD ORDER I.P. +35 dBm (TYP.) MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Outline Drawings A19-1 Specifications


    OCR Scan     		PDF A19-1 /SMA19-1 A19-1 50-ohm WJ-CA19-1 WJ-A19-1 J1-4401

    transistor TE 2198

    Abstract: WJ-A19
    Text: WJ-A19/SMA19 10 TO 1000 M HZ TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +21 dBm TYP. ♦ HIGH THIRD ORDER I P.: +34 dBm (TYP.) Outline Drawings Specifications5* A19 Typical Characteristics Guaranteed 0° to 50°C -54° to +85°C


    OCR Scan     		PDF WJ-A19/SMA19 50-ohm 114mA D0D700M transistor TE 2198 WJ-A19

    14549F

    Abstract: itt 946 946-5D itt 9094 ITT 946-1D dtl logic gates 9094-5d ITT 9097 5D ITT DTL 944-5D
    Text: ITT Sem iconductors Integrated C irc u its -D T L D T L Series L o g ic Elem ents The D T L fam ily is a com prehensive set of silicon m onolithic logic elements designed to cover a wide range of military and industrial applications. The basis of the fam ily is a diode-transistor


    OCR Scan     		PDF 20MHz. 14549F itt 946 946-5D itt 9094 ITT 946-1D dtl logic gates 9094-5d ITT 9097 5D ITT DTL 944-5D