BAS16W
Abstract: MMBD4148W
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE MMBD4148W/BAS16W SWITCHING DIODE SOT-323 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance Marking: A2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OT-323
MMBD4148W/BAS16W
OT-323
150mA
MMBD4148W
/BAS16W
BAS16W
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marking A2
Abstract: SOT-523 SOT523 Plastic-Encapsulate Diodes DIODE marking A2 BAS16T
Text: SOT-523 Plastic-Encapsulate Diodes BAS16T SWITCHING DIODE SOT-523 FEATURES Power dissipation PD : 150 mW（Tamb=25℃） Forward Current IF : 75 mA Reverse Voltage VR: 85 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ Marking A2
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OT-523
BAS16T
OT-523
150mA
marking A2
SOT-523
SOT523
Plastic-Encapsulate Diodes
DIODE marking A2
BAS16T
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes MMBD4148W/BAS16W SOT-323 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 1 3 2 MARKING: A2 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
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OT-323
MMBD4148W/BAS16W
OT-323
150mA
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Untitled
Abstract: No abstract text available
Text: MMBD4148W/BAS16W Switching Diode SOT-323 Features Fast Switching Speed For General Purpose Switching Applications High Conductance Marking: Dimensions in inches and millimeters A2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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MMBD4148W/BAS16W
OT-323
150mA
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Untitled
Abstract: No abstract text available
Text: BAS16W-WS PB FREE PRODUCT SURFACE MOUNT FAST SWITCHING DIODE SOT-323 FEATURES z Fast Switching Speed z For General Purpose Switching Applications High Conductance z Marking: A2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter
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BAS16W-WS
OT-323
150mA
MMBD4148W
/BAS16W
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BAS43
Abstract: SCHOTTKY DIODE bar42 st da5 diode BAR43C BAS43A BAR43
Text: BAR 42 BAR 43, A, C, S SMALL SIGNAL SCHOTTKY DIODES A K K1 N.C. K2 A BAR42/BAR43 BAR43A A1 K2 K K1 A1 A2 A2 BAR43C DESCRIPTION General purpose metal to silicon diodes featuring very low turn-on voltage and fast switching. BAR43S SOT 23 Plastic ABSOLUTE RATINGS (limiting values) (Tamb = 25°C) (see note 1)
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BAR42/BAR43
BAR43A
BAR43C
BAR43S
BAS43
SCHOTTKY DIODE bar42 st
da5 diode
BAR43C
BAS43A
BAR43
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BAS43
Abstract: BAS43A marking db2 bar43c BAR42 BAR43 BAR43A BAR43C BAR43S L 43 diodes
Text: BAR 42 BAR 43, A, C, S SMALL SIGNAL SCHOTTKY DIODES A K K1 N.C. K2 A BAR42/BAR43 BAR43A A1 K2 K K1 A1 A2 A2 BAR43C DESCRIPTION General purpose metal to silicon diodes featuring very low turn-on voltage and fast switching. BAR43S SOT 23 Plastic ABSOLUTE RATINGS (limiting values) (Tamb = 25°C) (see note 1)
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BAR42/BAR43
BAR43A
BAR43C
BAR43S
BAS43
BAS43A
marking db2 bar43c
BAR42
BAR43
BAR43A
BAR43C
BAR43S
L 43 diodes
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current
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LBAW56WT1G
3000/Tape
LBAW56WT3G
10000/Tape
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NL27WZ14DFT2G
Abstract: A114 NL27WZ04 NL27WZ14 54 SC59-6
Text: NL27WZ14 Dual Schmitt-Trigger Inverter MARKING DIAGRAMS 6 6 M The NL27WZ14 is a high performance dual inverter with Schmitt−Trigger inputs operating from a 1.65 to 5.5 V supply. Pin configuration and function are the same as the NL27WZ04, but the inputs have hysteresis and, with its Schmitt trigger function, the
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NL27WZ14
NL27WZ14
NL27WZ04,
NL27WZ14DFT2G
A114
NL27WZ04
54 SC59-6
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551WT1G G1 3000/Tape&Reel LMBT5551WT3G G1 10000/Tape&Reel LMBT5551WT1G 3 1 2 MAXIMUM RATINGS Rating
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LMBT5551WT1G
3000/Tape
LMBT5551WT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: Leshan Radio Co.Ltd General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16WT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-16WT1G 5A Pb-Free SOT-323 3000/Tape&Reel LBC807-25WT1G 5B (Pb-Free)
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LBC807-16WT1G
OT-323
3000/Tape
LBC807-25WT1G
LBC807-40WT1G
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A114
Abstract: NL27WZ04 NL27WZ14
Text: NL27WZ14 Dual Schmitt−Trigger Inverter http://onsemi.com MARKING DIAGRAMS 6 6 M The NL27WZ14 is a high performance dual inverter with Schmitt−Trigger inputs operating from a 1.65 to 5.5 V supply. Pin configuration and function are the same as the NL27WZ04, but
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NL27WZ14
NL27WZ14
NL27WZ04,
NL27WZ14/D
A114
NL27WZ04
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NL27WZ14DTT1G
Abstract: A114 NL27WZ04 NL27WZ14
Text: NL27WZ14 Dual Schmitt-Trigger Inverter http://onsemi.com MARKING DIAGRAMS 6 6 M The NL27WZ14 is a high performance dual inverter with Schmitt−Trigger inputs operating from a 1.65 to 5.5 V supply. Pin configuration and function are the same as the NL27WZ04, but
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NL27WZ14
NL27WZ14
NL27WZ04,
NL27WZ14/D
NL27WZ14DTT1G
A114
NL27WZ04
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device LBC807-40WT1G Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel LBC807-40WT3G YL SOT-323 10000/Tape&Reel
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LBC807-40WT1G
OT-323
3000/Tape
LBC807-40WT3G
10000/Tape
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marking FR PNP SOT323
Abstract: LBC807-40WT1G LBC807-40WT3G YL marking sc70
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel LBC807-40WT3G YL SOT-323 10000/Tape&Reel LBC807-40WT1G
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LBC807-40WT1G
OT-323
3000/Tape
LBC807-40WT3G
10000/Tape
marking FR PNP SOT323
LBC807-40WT1G
LBC807-40WT3G
YL marking sc70
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DIODE UF marking code
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G Features • We declare that the material of product compliance with RoHS requirements. 3 1 DEVICE MARKING 2 LBAW56WT1G = A1 CASE 419–04, STYLE 4 SOT–323 SC–70 MAXIMUM RATINGS (TA = 25°C)
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LBAW56WT1G
3000/Tape
LBAW56WT3G
10000/Tape
DIODE UF marking code
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Untitled
Abstract: No abstract text available
Text: CM1218 Low Capacitance Transient Voltage Suppressors / ESD Protectors Description The CM1218 family of devices features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which may be subjected to electrostatic
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CM1218
MIL-STD-883D
OT23-3
419AH
CM1218/D
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Untitled
Abstract: No abstract text available
Text: NL27WZ14 Dual Schmitt-Trigger Inverter http://onsemi.com MARKING DIAGRAMS 6 6 1 M The NL27WZ14 is a high performance dual inverter with Schmitt−Trigger inputs operating from a 1.65 to 5.5 V supply. Pin configuration and function are the same as the NL27WZ04, but
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NL27WZ14
NL27WZ04,
NL27WZ14/D
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Untitled
Abstract: No abstract text available
Text: CM1218 Low Capacitance Transient Voltage Suppressors / ESD Protectors Description The CM1218 family of devices features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which may be subjected to electrostatic
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CM1218
CM1218
CM1218/D
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On semiconductor date Code sot-143
Abstract: 846AB SOT23 A1 TSSOP-8 footprint and soldering sot-23 d056 sot23 8X SOT23-5 318 SOT23 marking L2 sot23 MARKING CODE SOT23-5 HE marking L2 SOT23 6
Text: PACDN042 Transient Voltage Suppressors and ESD Protectors Product Description The PACDN042/43/44/45/46 family of transient voltage suppressor arrays provide a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge ESD .
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PACDN042
PACDN042/43/44/45/46
MIL-STD-883D
OT23-3
OT23-5
PACDN042/D
On semiconductor date Code sot-143
846AB
SOT23 A1
TSSOP-8 footprint and soldering sot-23
d056 sot23
8X SOT23-5
318 SOT23
marking L2 sot23
MARKING CODE SOT23-5 HE
marking L2 SOT23 6
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SI2302DS
Abstract: No abstract text available
Text: Tem ic SÌ2302DS S e m i c o n d u c t o r s N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary V d s V H)S(on) (Q ) Id (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ Vgs = 2.5 V 2.4 20 TO-236 (SOT-23) G S T Ï Ï /' Top View SÎ2302DS (A2)* ♦Marking Code Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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OCR Scan
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2302DS
O-236
OT-23)
S-53600--
22-May-97
SI2302DS
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transistor MAR 819
Abstract: transistor MAR 543 sl2 357 BFS17
Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4
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BFS17/BFS17R
BFS17
BFS17R
26-Mar-97
transistor MAR 819
transistor MAR 543
sl2 357
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MAR 618 transistor
Abstract: S parameters of BFR93AR GHz transistor transistor d 1556 Temic Semiconductors bfr93a BFR93a
Text: Temic BFR93A/BFR93AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • • High power gain High transition frequency • Low noise figure BFR93A Marking: + R2 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter
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BFR93A/BFR93AR
BFR93A
BFR93AR
26-Mar-97
MAR 618 transistor
S parameters of BFR93AR GHz transistor
transistor d 1556
Temic Semiconductors bfr93a
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BFR92R
Abstract: sot 23 transistor 70.2 MAR 641 TRANSISTOR
Text: Temic BFR92/BFR92R Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR92 Marking: PI Plastic case SOT 23
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BFR92/BFR92R
BFR92
BFR92R
26-Mar-97
sot 23 transistor 70.2
MAR 641 TRANSISTOR
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