Untitled
Abstract: No abstract text available
Text: D • A235bOS DDBlEEfl 1 M S I E G XX, , SIEMENS AKTIEN GE SEL LSCHAF T-52.-33-5S SAB 82289 Bus Arbiter for SAB 80286 Processors SAB 82289-6 up to 12 MHz SAB 82289 up to 16 MHz • S upports m u ltim aster system bus arbitration protocol • Synchronizes SAB 80286 processor w ith
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A235bOS
-33-5S
S07HOLD
fl235b05
00312b!
T-52-33-55
82289-P
Q67020-Y77
82289-6-P
Q67120-Y111
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BTS100
Abstract: No abstract text available
Text: m a235bOS 00013=15 0Ô2 SIEMENS Smart Highside Power Switch TEMPFET BTS 100 Features • • • • P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints see chapter Technical Information
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a235bOS
TQ-220AB
C67078-A5007-A2
fl235b05
00614D3
C67078-A5007-A4
6PT053M
E3045
C67078-A5007-A7
BTS100
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Untitled
Abstract: No abstract text available
Text: bOE ]> • EMENS A235bOS 004712*} 3^3 K M S I E 6 SIEMENS AKTIENGESELLSCHAF 'T - 4 ^ '3 - 1 3 HYM 91000S/L-60/-70/-80 HYM 9100SL/LL-60/-70 1M x 9-Bit Dynamic RAM Module Advanced Information • 1 048 576 words by 9-bit organization • Fast access and cycle time
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A235bOS
91000S/L-60/-70/-80
9100SL/LL-60/-70
fl23SbD5
91000S
L/91000SL
A53SbOS
G047144
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SIEMENS BST
Abstract: A712S siemens 230 96 SIEMENS BST P smd 42t MAS 10 RCD SIEMENS BST h 05 60 SIEMENS BST g 02 60 HPC16 SIEMENS BST N 35
Text: SIEM ENS 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 P re lim in ary Info rm ation • 4 194 304 words by 16-bit organization • 0 to 70 ”C operating temperature
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16-Bit
3164165AT
3165165AT
3166165AT
fiE3Sb05
A712S
SIEMENS BST
siemens 230 96
SIEMENS BST P
smd 42t
MAS 10 RCD
SIEMENS BST h 05 60
SIEMENS BST g 02 60
HPC16
SIEMENS BST N 35
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double balanced mixer balun
Abstract: bxc17 c221 TRANSISTOR gilbert cell differential pair high frequency mixer C12A C12B PMB2207 gilbert mixer DOUBLE BALANCED MODULATOR
Text: SIEM EN S Mixer DC - 2.5GHz and Vector Modulator 80 - 800MHz PMB 2207 Target Spezifikation Bipolar IC General Overview Features Vignette • Direct quadrature modulator with separate additional double balanced active mixer • Direct quadrature modulation
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800MHz
P-TSSOP-24-1
double balanced mixer balun
bxc17
c221 TRANSISTOR
gilbert cell differential pair
high frequency mixer
C12A
C12B
PMB2207
gilbert mixer
DOUBLE BALANCED MODULATOR
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current SFH 212 Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im
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A235bOS
0057bDÃ
fl23SbOS
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U1615
Abstract: No abstract text available
Text: SIEMENS TDA 6612-5 TV-Stereo-Sound Bipolar IC Preliminary Data Features The TDA 6612-5 represents a complete TV-stereo system controlled by the I2C Bus according to German TV-Stereo standard. • All functions inclusive matrix adjustment are I2C Bus controlled
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Q67000-A5
0235bOS
P-DSO-28-1
023Sb05
U1615
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Untitled
Abstract: No abstract text available
Text: SIEMENS TUA 601 OX preliminary IC-SPECIFICATION TV Mixer-Oscillator-PLL for 1.1 GHz page Contents 1 Functional Description, Application 2 3-4 Pin Defintion and Function 5 Block Diagram Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings 12
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S879-B200-V1
fl23SbD5
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Untitled
Abstract: No abstract text available
Text: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212
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fi23SbOS
0031bl0
82C212
M/256
640CHAF
SAB82C212
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BTS141
Abstract: siemens relay GPT05164 Q67060-S6502-A2 Q67060-S6502-A3 H24b4
Text: SIEMENS HITFET BTS141 Smart Lowside Power Switch Features Product Summary • • • • • • • Continuous drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level Input Input protection (ESD) Thermal shutdown
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BTS141
500ii
23SbD5
T0220
Q67060-S6502-A2
GPTMI55
E3045A
Q67060-S6502-A3
BTS141
siemens relay
GPT05164
Q67060-S6502-A2
Q67060-S6502-A3
H24b4
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zck m1
Abstract: SIEMENS BST ABIAP zck d15 D1113 SIEMENS BST h 05 90 SIEMENS SCR BST smd marking mop smd marking T22 Siemens pulse sequence
Text: SIEM ENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fc K 166 125 125 125 MHz latency 3 2 3 3 - ÍCK3 6 8 7 8 ns ^AC3 5.5 5.5 5.5 6 Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability
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39S13620TQ-6/-7/-8
cycles/32
39S16320TQ
023Sb05
zck m1
SIEMENS BST
ABIAP
zck d15
D1113
SIEMENS BST h 05 90
SIEMENS SCR BST
smd marking mop
smd marking T22
Siemens pulse sequence
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BTS611L1
Abstract: BTS612N1 GPT051S7 Q67060-S6302-A2 Q67060-S6302-A3 SCR 535 A-S
Text: H fl235b05 DOfllbb? =5bO SIEM ENS BTS611L1 Smart Two Channel Highside Power Switch Features • • • • • • • • • • • • Product Summary Load dump and reverse battery protection1 Clamp of negative voltage at output Vload dump Short-circuit protection
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fl235b05
BTS611L1
023SbOS
BTS61Ã
O-220AB/7
Q67060-S6302-A2
GPT051S7
220AB/7,
E3230
BTS611L1
BTS612N1
GPT051S7
Q67060-S6302-A2
Q67060-S6302-A3
SCR 535 A-S
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STT 3 SIEMENS 431
Abstract: 80c517 Siemens sab 2793b-p
Text: bOE D • fl2 3 5 fc iO S G G H 7T23 S IE M E N S SIEMENS 152 « S IE G A K T IE N G E S E L L S C H A F ^ High-Performance 8-Bit CMOS Single-Chip Microcontroller ^ e=r - / 9 - o 7 SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM
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80C517
80C537
80C517/80C537
32-bit
16-bit
80C515
023SbOS
80C517/83C537
P-LCC-84
STT 3 SIEMENS 431
Siemens sab 2793b-p
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sfh 309 fr
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 P • GaAIAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren • Hohe Zuverlässigkeit • Enge Toleranz: Chipoberfläche/ Bauteiloberkante • Hohe Impulsbelastbarkeit
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SFH487P
switc53SbG5
950nm
fl235b05
sfh 309 fr
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BMS404
Abstract: No abstract text available
Text: S IEM EN S ISDN D-Channel Exchange Controller IDEC PEB 2075 CM OS 1C 1 • • • • • • • • • • • • • Features Four independent HDLC channels 64-byte FIFO storage per channel and direction Handling of basic HDLC functions flag detection/generation
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64-byte
P-DIP-28
2075-N
P-LCC-44
flB35bD5
D07Dbfiti
BMS404
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siemens sab 82538
Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Text: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
fl23Sb05
siemens sab 82538
3tb siemens
T-0657
SiEMENS PM 350 98
SAB 80188
QD70
SIEMENS ESCC8
1fa MARKING
processor hbt 00 04 g
Q67100-H6441
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SMD Transistor g14
Abstract: BTS 433
Text: •I Ö23SLGS □□C I2717 001 ■ SIEMENS PROFET BTS425L1 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • Overload protection • Current limitation
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I2717
BS425L
BTS425L1
E3043
Q67060-S6100-A4
SMD Transistor g14
BTS 433
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23
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Q62702-C2445
OT-23
023SbD5
G120a
015D677
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Untitled
Abstract: No abstract text available
Text: • fiE35b05 Q103427 ^50 SIEM ENS TrilithIC BTS 780 Target Data Overview Features • • • • • • » • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications
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fiE35b05
Q103427
fl235b05
S35bGS
Q1Q3443
P-T0263-15-1
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5N521
Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Text: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.
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BFQ71
Q62702-F775
0235bG5
DGb713S
5N521
VCE05181
bfq 85
siemens Pm 90 87
transistor zo 103 MA 7S 714
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K4887-K4
Abstract: B25355-K167-K4 ws dvd 290
Text: MP DC Capacitors Smoothing, Supporting, Discharge B 25 355 High peak-current capability Wide capacitance and voltage range Construction • Self-healing • Paper dielectric • Oil and hard-wax impregnated tubular windings no PCB • Metal-sprayed face ends ensure reliable contacting
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KLK0875â
KLK1270-C
B25355-F6405-K1
fi235bQ5
K4887-K4
B25355-K167-K4
ws dvd 290
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Untitled
Abstract: No abstract text available
Text: Semiconductor Group Siemens AG Consumer Electronics MOS Edition Target Specification Document number: V66100-M692-X-1 -7659 Date: 08.11.94 flE35tiDS D07c1blb 02=1 11.94 Page: ii Target Specification SDA 5650 Contents 1 General D es c rip tio n .5
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V66100-M692-X-1
flE35tiDS
0235hDS
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BFQ 58
Abstract: No abstract text available
Text: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F659
OT-23
fi23SbDS
BFQ 58
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 3118160BSJ-50/-60/-70 Advanced Information I 048 576 words by 16-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)
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16-Bit
3116160BSJ-50/-60/-70
3118160BSJ-50/-60/-70
HYB3118160BSJ-50)
HYB3118160BSJ-60)
HYB3118160BSJ-70)
071b05
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