smd JSs 13

Abstract: smd JSs smd JSs 99 VT244A smd JSs 75 DQ2Q-DQ23 3E2 material specification
Contextual Info: SIEM EN S 16M x 72-Bit Dynamic RAM EDO- Module E C C - Module HYM 72V1605GS-50/-60 HYM 72V1615GS-50/-60 168pin buffered DIMM Module Preliminary Inform ation • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line M em ory Module • 1 bank 16 M x 72 organisation

Contextual Info: • fiE3SbOS 0DS1SE3 7Sfl SIEMENS PROFET BTS 442 D2 Smart Highside Power Switch Features • • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection including load dump Fast demagnetization of inductive loads

T60403-L4021

Abstract: function of lts 543 ic OB35 ltp250 T1605 vogt 543 VOGT B1 65495
Contextual Info: PEB 2084 Revision History: Current Version: Data Sheet 07.95 Previous R eleases: Preliminary Technical Manual 2 .9 4 Subjects major changes since last revision P age P age (in previous (in current Version) Version) 11 8 Figure 1, ID O = Output and Input

B23SL

Contextual Info: SIEMENS ICs for Communications Intelligent Network Termination Controller 2B1Q INTC-Q PEB 8191 Version 1.1 PEF 8191 Version 1.1 D a ta s h e e t 10.97 DS 1 Edition 10.97 T his e d ition w a s realized using the so ftw a re syste m Fram eM aker . Published by Siemens AG,

Contextual Info: Device Specification SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517A/83C517A-5 Preliminary SAB 83C517A-5 SAB 80C517A Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • SAB 80C517A/83C517A-5,

ha1864

Abstract: BDX27 BDX28 Q62702-D160 Q62702-D160-V10 Q62702-D160-V6 Q62702-D162 Q62702-D162-V10 Q62702-D162-V16 Q62702-D162-V6
Contextual Info: Ö235b05 QGD4440 7 « S I E G HSC D PNP Silicon Planar Transistors SIEMENS AK TI ENG ESE LL SCH AF 04440 r"-1 3 -z/ BDX27 BDX28 D - BDX 29 BDX 30 BDX 27, BDX 28, BDX 29, and BDX 30 are epitaxial PNP silicon power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.

Contextual Info: SIEM ENS Primary Rate Access Clock Generator and Transceiver PRACT PEB 22320 Preliminary Data 1 CMOS Features • ISDN line interface for 1544 and 2048 kbit/s T1 and CEPT • Data and clock recovery • Transparent to ternary codes • Low transmitter output impedance for a high return

IR4060

Abstract: BUZ50 C67078-A1307-A4
Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vbs to BUZ 50 B 1000 V 2A flbston 8 Í2 Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage ''DGR

Contextual Info: • B235bD5 DDTflTMG 7TT ■ SIEMENS 1/2 K b it 128/256 x 8 bit S e ria l CM O S E E P R O M s , I 2C S y n c h ro n o u s 2-W ire B u s , P ag e P ro tectio n Mode” S L x 24C01/02/P Preliminary Features • Data EEPROM internally organized as 128/256 bytes and 16/32 pages x 8 bytes

Contextual Info: SIEMENS 023SbOS GOTbbBl IbT 5 -V Lo w -D ro p Fixed V oltage R eg ulato r T L E 4271 Features • • • • • • • • • • Output voltage tolerance < ± 2% Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V