Untitled
Abstract: No abstract text available
Text: www.fairchildsemi.com K A3 3 V Volt a ge St a bilize r Features Description • Low Temperature Coefficient • Low Dynamic Resistance • Typical Reference Voltage of 33V The KA33V is a monolithic integrated voltage stabilizer especially designed as voltage supplier for electronic tuners.
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KA33V
KA33V
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Untitled
Abstract: No abstract text available
Text: www.fairchildsemi.com K A3 7 8 R0 5 Low Dropout Volt a ge Re gulat or Features Description • • • • • The KA378R05 is a low-dropout voltage regulator suitable for various electronic equipments. It provides constant voltage power source with TO-220 4 lead full mold package.
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KA378R05
O-220
O-220F-4L
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Untitled
Abstract: No abstract text available
Text: www.fairchildsemi.com K A3 7 8 R3 3 Low Dropout V olt a ge Re gula t or Features Description • • • • • The KA378R33 is a low-dropout voltage regulator suitable for various electronic equipments. It provide constant voltage power source with TO-220 4 lead full mold package.
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KA378R33
O-220
O-220F-4L
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Untitled
Abstract: No abstract text available
Text: www.fairchildsemi.com K A3 7 8 R1 2 C Low Dropout Volt a ge Re gula t or Features Description • • • • • The KA378R12C is a low-dropout voltage regulator suitable for various electronic equipments. It provide constant voltage power source with TO-220 4 lead full mold package.
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KA378R12C
O-220
A/12V
O-220F-4L
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block diagram of of TMS320C4X
Abstract: EDI8L32512C20AI DSP96002 EDI8L32256C EDI8L32512C TMS320C32 EDI8L32512C15AI
Text: White Electronic Designs EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory
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EDI8L32512C
512Kx32
EDI8L32512C
DSP96002
TMS320C3x,
TMS320C4x
TMS320C30/C31
TMS320C32
DSP9Q09
block diagram of of TMS320C4X
EDI8L32512C20AI
DSP96002
EDI8L32256C
TMS320C32
EDI8L32512C15AI
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MO-47AE
Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
Text: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES ADSP-21060L SHARC ADSP-21062L (SHARC) Texas Instruments TMS320LC31 The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and
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EDI8L32512V
512Kx32
ADSP-21062L
TMS320LC31
EDI8L32512V
ADSP-21060L
MPC860
MO-47AE
ADSP-21060L
ADSP-21062L
EDI8L32128V
MPC860
TMS320LC31
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EDI8L32512V-AC
Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
Text: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC
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EDI8L32512V
512Kx32
EDI8L32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
512Kx8,
EDI8L32512V-AC
EDI8L32128V
MO-47AE
MPC860
TMS320LC31
ADSP-21060L
ADSP-21062L
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ADSP-21060L
Abstract: ADSP-21062L EDI8F32512V EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL
Text: EDI8F32512V White Electronic 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8F32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC
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EDI8F32512V
512Kx32
EDI8F32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
512Kx8,
ADSP-21060L
ADSP-21062L
EDI8L32128V
MO-47AE
MPC860
TMS320LC31
ADSP2106XL
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cd 5151
Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution
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EDI8L32512V
512Kx32
EDI8L32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
EDI8L32512C
lineDQ02
cd 5151
ADSP-21060L
ADSP-21062L
MPC860
TMS320LC31
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ABWD
Abstract: AADV WED2ZLRSP01S WED2ZLRSP01S35BC WED2ZLRSP01S38BC WED2ZLRSP01S42BC ABWc
Text: White Electronic Designs WED2ZLRSP01S 512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM FEATURES DESCRIPTION The WED2ZLRSP01S, Dual Independent Array, NBLSSRAM device employs high-speed, Low-Power CMOS silicon and is fabricated using an advanced CMOS process.
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WED2ZLRSP01S
32/256K
WED2ZLRSP01S,
100MHz
The2ZLRSP01S50BC
WED2ZLRSP01S38BI
WED2ZLRSP01S42BI
WED2ZLRSP01S50BI
ABWD
AADV
WED2ZLRSP01S
WED2ZLRSP01S35BC
WED2ZLRSP01S38BC
WED2ZLRSP01S42BC
ABWc
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S29CL016J
Abstract: S29CL032 S29CD016J am29lv JC42 S29CD-J S29CL-J CD016J cl016 CL-016
Text: S29CD016J/S29CL016J Known Good Die 16 Megabit 512k x 32-Bit CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory with VersatileI/O Supplement (Preliminary) General Description The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology.
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S29CD016J/S29CL016J
32-Bit)
S29CD016J
S29CL016J
S29CD-J)
S29CL-J)
S29CD016J/S29CL016J
S29CL032
am29lv
JC42
S29CD-J
S29CL-J
CD016J
cl016
CL-016
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IC vertical lg
Abstract: MW3736CKH
Text: CCD Area Image Sensor MW3736CKH 11mm 2/3 inch 768H CCD Area Image Sensor • Overview ■ Pin Assignments The MW3736CKH is a 11mm (2/3 inch) Interline Transfer CCD (ITCCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section
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MW3736CKH
MW3736CKH
IC vertical lg
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Untitled
Abstract: No abstract text available
Text: WMS512K8-XXX White Electronic Designs 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES Access Times 15, 17, 20, 25, 35, 45, 55ns MIL-STD-883 Compliant Devices Available Revolutionary, Center Power/Ground Pinout JEDEC Approved 36 lead Ceramic SOJ Package 100
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WMS512K8-XXX
512Kx8
05HXX
06HXX
07HXX
08HXX
09HXX
10HXX
14HXX
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smd mark 601 8 pin
Abstract: WMS512K8-XXX SRAM flatpack
Text: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns Commercial, Industrial and Military Temperature Range MIL-STD-883 Compliant Devices Available
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WMS512K8-XXX
512Kx8
MIL-STD-883
05HXX
06HXX
07HXX
08HXX
09HXX
10HXX
14HXX
smd mark 601 8 pin
WMS512K8-XXX
SRAM flatpack
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A016
Abstract: A016 SMD CQFP 80
Text: White Electronic Designs WS128K32-XXX 128Kx32 SRAM MODULE, SMD 5962-93187 FEATURES Access Times of 70, 85, 100, 120ns 5V Power Supply MIL-STD-883 Compliant Devices Available Low Power CMOS Packaging TTL Compatible Inputs and Outputs • 66-pin, PGA Type, 1.075 inch square, Hermetic
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WS128K32-XXX
128Kx32
120ns
MIL-STD-883
66-pin,
128Kx32;
256Kx16
512Kx8
512Kx32
WS128K32-XG2UX
A016
A016 SMD
CQFP 80
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EDI2DL32256V
Abstract: TMS320C6201
Text: EDI2DL32256V 256Kx32 Synchronous Pipline Burst SRAM 3.3V FEATURES DESCRIPTION • tKHQV times of 3.5, 3.8 and 4.0ns The EDI2DL32256VxxBC is a 3.3V, 256Kx32 Synchronous Pipeline Burst SRAM constructed with two 256Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 119
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EDI2DL32256V
256Kx32
EDI2DL32256VxxBC
256Kx16
of166,
TMS320C6x
EDI2DL32256V
TMS320C6201
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MW39580AE Diagonal 11 mm type-2/3 IT CCD Area Image Sensor • Pin Assignments ■ Overview The MW39580AE is a type-2/3 2.2M-pixel CCD solid state image sensor. This device uses photodiodes in the opto-electric conversion section and CCDs for signal read-out. The electronic shutter function allows for an exposure time of 1/10 000
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MW39580AE
MW39580AE
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MW3759MAE 11mm type-2/3 Wide CCD Area Image Sensor • Overview The MW3759MAE is a 11mm (type-2/3) Multiple Frame interline transfer CCD (M-FIT-CCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section and CCDs for signal read out.
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MW3759MAE
MW3759MAE
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WMS512K8-XXX
Abstract: No abstract text available
Text: WMS512K8-XXX HI-RELIABILITY PRODUCT 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 ■ Access Times 15, 17, 20, 25, 35, 45, 55ns ■ MIL-STD-883 Compliant Devices Available ■ Revolutionary, Center Power/Ground Pinout
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WMS512K8-XXX
512Kx8
MIL-STD-883
10HZX
14HZX
05HXX
06HXX
07HXX
08HXX
09HXX
WMS512K8-XXX
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smd mark 601 8 pin
Abstract: CERAMIC LEADLESS CHIP CARRIER CLCC 28 512k x 8 SRAM
Text: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES n Access Times 15, 17, 20, 25, 35, 45, 55ns n 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 n MIL-STD-883 Compliant Devices Available n Commercial, Industrial and Military Temperature Range
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WMS512K8-XXX
512Kx8
MIL-STD-883
10HZX
14HZX
05HXX
06HXX
07HXX
08HXX
09HXX
smd mark 601 8 pin
CERAMIC LEADLESS CHIP CARRIER CLCC 28
512k x 8 SRAM
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WS128K32V-XXX PRELIMINARY* 128Kx32 3.3V SRAM MODULE FEATURES Access Times of 15*, 17, 20, 25, 35ns 3.3 Volt Power Supply MIL-STD-883 Compliant Devices Available Low Power CMOS Low Voltage Operation TTL Compatible Inputs and Outputs
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WS128K32V-XXX
128Kx32
MIL-STD-883
66-pin,
WS128K32V-XG2UX
WS128K32NV-XH1X
128Kx32;
256Kx16
512Kx8
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EDH411MN-10
Abstract: EDH411MN-12 EDH411MN-15
Text: Electronic Designs ln< - ' . EDH411MN-10/12/15 . < ^ ^ \ s v • -» •» V \ ' »v • PINOUTS VC C RASO DOUT A3 A6 □ IN WE RÂS1 AO A7 A8 C AS RAS2 c C C c c c C 8 c 9 c 17 C 18 C vc c vss • C om m on D IN /D O U T lines w ith separate RAS co ntro l
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EDH411MN-10/12/15
EDH411MN
EDH411MN-10
EDH411MN-12
EDH411MN-15
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CRZ 2005
Abstract: 16KX8 vqc 10 d VH192 CTZ FCC 16
Text: 9H Electronic Designs li ED H88H16C-55/70/1C MILITARY 16K x 8 SRAM CMOS < # FEATURES PINOUTS 1 □ 2 □ 27 □ 26 □ 2S AS 3 24 A9 □ 23 A3 c c 3 c 4 c 5 c 6 c 7 c 28 3 23 NC A2 ê c 3 21 AIO A1 9 c 3 20 CEO AO 10 c 3 19 007 DOO 11 c P 1« DQ6 001 12 c
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EDH88H16C-55/70/1C
EDH88H16C
EDH88H16C
CRZ 2005
16KX8
vqc 10 d
VH192
CTZ FCC 16
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Untitled
Abstract: No abstract text available
Text: Panasonic CCD Area Image Sensor MW3795H, MW3795S 11 mm 2/3 inch CCD Area Image Sensors for HDTV •Overview iPin Assignments The M W 3795H and M W 3795S are 11mm (2/3 inch) Frame Interline Transfer C C D (FIT-C C D ) solid state image sensor NC 1 32 This device uses photodiodes in the optoelectric conversion
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MW3795H,
MW3795S
3795H
3795S
MW3795H
GD13S1Ã
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