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    A3 ELECTRONIC DEVICE Search Results

    A3 ELECTRONIC DEVICE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    A3 ELECTRONIC DEVICE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WMS512K8V-XCX

    Abstract: No abstract text available
    Text: White Electronic Designs 512Kx8 MONOLITHIC SRAM ADVANCED* FEATURES EVOLUTIONARY PINOUT • Access Times 70, 85, 100, 120ns 32 DIP 32 CSOJ DE ■ MIL-STD-883 Compliant Devices Available ■ Low Voltage Operation TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2


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    PDF 512Kx8 120ns MIL-STD-883 WMS512K8V-XCX WMS512K8V-XCX

    Untitled

    Abstract: No abstract text available
    Text: www.fairchildsemi.com K A3 3 V Volt a ge St a bilize r Features Description • Low Temperature Coefficient • Low Dynamic Resistance • Typical Reference Voltage of 33V The KA33V is a monolithic integrated voltage stabilizer especially designed as voltage supplier for electronic tuners.


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    PDF KA33V KA33V

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 EVOLUTIONARY PINOUT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND FEATURES 32 DIP 32 CSOJ DE • Access Times 70, 85, 100, 120ns MIL-STD-883 Compliant Devices Available


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    PDF WMS512K8-XXX 512Kx8 120ns MIL-STD-883 A0-18 120ns 100ns 01HYX

    c 4072

    Abstract: WMS512K8-XXX
    Text: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 EVOLUTIONARY PINOUT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND FEATURES 32 DIP 32 CSOJ DE • Access Times 70, 85, 100, 120ns MIL-STD-883 Compliant Devices Available


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    PDF WMS512K8-XXX 512Kx8 120ns MIL-STD-883 01HYX 100ns 02HYX 03HYX 04HYX c 4072 WMS512K8-XXX

    Untitled

    Abstract: No abstract text available
    Text: www.fairchildsemi.com K A3 7 8 R0 5 Low Dropout Volt a ge Re gulat or Features Description • • • • • The KA378R05 is a low-dropout voltage regulator suitable for various electronic equipments. It provides constant voltage power source with TO-220 4 lead full mold package.


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    PDF KA378R05 O-220 O-220F-4L

    23425

    Abstract: No abstract text available
    Text: White Electronic Designs 2x512Kx8 DUALITHIC™ SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8-XCX • Access Times 70, 85, 100ns 32 DIP ■ Evolutionary, Corner Power/Ground Pinout TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND


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    PDF 2x512Kx8 100ns 512Kx8 23425

    Untitled

    Abstract: No abstract text available
    Text: www.fairchildsemi.com K A3 7 8 R3 3 Low Dropout V olt a ge Re gula t or Features Description • • • • • The KA378R33 is a low-dropout voltage regulator suitable for various electronic equipments. It provide constant voltage power source with TO-220 4 lead full mold package.


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    PDF KA378R33 O-220 O-220F-4L

    Untitled

    Abstract: No abstract text available
    Text: www.fairchildsemi.com K A3 7 8 R1 2 C Low Dropout Volt a ge Re gula t or Features Description • • • • • The KA378R12C is a low-dropout voltage regulator suitable for various electronic equipments. It provide constant voltage power source with TO-220 4 lead full mold package.


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    PDF KA378R12C O-220 A/12V O-220F-4L

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Times of 120, 140, 150, 200, 250, 300ns PIN CONFIGURATION 32 DIP 32 CSOJ TOP VIEW NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS


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    PDF WME128K8-XXX 128Kx8 300ns MIL-STD-883 of128K 300ns 250ns 200ns 150ns 140ns

    WME128K8-XXX

    Abstract: No abstract text available
    Text: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Times of 120, 140, 150, 200, 250, 300ns PIN CONFIGURATION 32 DIP 32 CSOJ TOP VIEW NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS


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    PDF WME128K8-XXX 128Kx8 300ns MIL-STD-883 04HYX 140ns 05HYX 120ns 06HYX WME128K8-XXX

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs 2x512Kx8 DUALITHIC™ SRAM ADVANCED* PIN CONFIGURATION FOR WS1M8V-XCX FEATURES • Access Times 17, 20, 25, 35, 45, 55ns 32 DIP TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15


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    PDF 2x512Kx8 512Kx8

    block diagram of of TMS320C4X

    Abstract: EDI8L32512C20AI DSP96002 EDI8L32256C EDI8L32512C TMS320C32 EDI8L32512C15AI
    Text: White Electronic Designs EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory


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    PDF EDI8L32512C 512Kx32 EDI8L32512C DSP96002 TMS320C3x, TMS320C4x TMS320C30/C31 TMS320C32 DSP9Q09 block diagram of of TMS320C4X EDI8L32512C20AI DSP96002 EDI8L32256C TMS320C32 EDI8L32512C15AI

    TMS320C4X

    Abstract: DSP96002 EDI8L32256C EDI8L32512C TMS320C32 ADQ28 MO-47
    Text: White Electronic Designs EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory


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    PDF EDI8L32512C 512Kx32 EDI8L32512C DSP96002 TMS320C3x, TMS320C4x TMS320C30/C31 TMS320C32 TMS320C4X DSP96002 EDI8L32256C TMS320C32 ADQ28 MO-47

    MO-47AE

    Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
    Text: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES    ADSP-21060L SHARC  ADSP-21062L (SHARC)  Texas Instruments TMS320LC31   The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and


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    PDF EDI8L32512V 512Kx32 ADSP-21062L TMS320LC31 EDI8L32512V ADSP-21060L MPC860 MO-47AE ADSP-21060L ADSP-21062L EDI8L32128V MPC860 TMS320LC31

    ADSP-21060L

    Abstract: ADSP-21062L EDI8F32512V EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL
    Text: EDI8F32512V White Electronic 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8F32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC


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    PDF EDI8F32512V 512Kx32 EDI8F32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, ADSP-21060L ADSP-21062L EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL

    5962-96691

    Abstract: CERAMIC LEADLESS CHIP CARRIER wms128k8 WMS128K8-XXX smd mark 601 8 pin
    Text: White Electronic Designs WMS128K8-XXX 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 FEATURES „ 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 „ MIL-STD-883 Compliant Devices Available „ Commercial, Industrial and Military Temperature Range • 36 lead Ceramic Flat Pack (Package 226)


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    PDF WMS128K8-XXX 128Kx8 MIL-STD-883 05HXX 06HXX 07HXX 08HXX 09HXX 10HXX 11HXX 5962-96691 CERAMIC LEADLESS CHIP CARRIER wms128k8 WMS128K8-XXX smd mark 601 8 pin

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WMS128K8-XXX 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 FEATURES 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns MIL-STD-883 Compliant Devices Available Revolutionary, Center Power/Ground Pinout JEDEC


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    PDF 128Kx8 WMS128K8-XXX MIL-STD-883 t2-96691 08HYX 09HYX 10HYX 11HYX 05HXX 06HXX

    EDI8L32512V

    Abstract: No abstract text available
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V T NO FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.


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    PDF EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C

    EDI8L32512V-AC

    Abstract: 8L32512V
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution


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    PDF EDI8L32512V 512Kx32 ADSP-21060L ADSP-21062L TMS320LC31 MPC860 M0-47AE EDI8L32512V EDI8L32512V-AC 8L32512V

    cd 5151

    Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution


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    PDF EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C cd 5151 ADSP-21060L ADSP-21062L MPC860 TMS320LC31

    three phase bridge inverter

    Abstract: three phase pulse generator 3 phase waveform generator three phase bridge inverter in 120 degree ultrasonic generator 1 Mhz Marconi bridge rectifier p circuit diagram of pulse width modulation INTEL I7 microprocessor circuit diagram marconi signal generator marconi electronic devices ltd
    Text: ! Marconi Electronic Devices Three Phase Pulse Width Modulation Waveform Generator MA818 PRELIMINARY DATA SHEET _^ 40] VDD U 39 A IO E M A9 Œ FEATURES * Fully digital operation A8 AD3 La AD4 r? 36| A7 E 35] A6 E 3^ A5 E 33] A4 5 32l A3 m 3Ï1 A2 * 'S ile n t' inverter operation possible


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    PDF MA818 three phase bridge inverter three phase pulse generator 3 phase waveform generator three phase bridge inverter in 120 degree ultrasonic generator 1 Mhz Marconi bridge rectifier p circuit diagram of pulse width modulation INTEL I7 microprocessor circuit diagram marconi signal generator marconi electronic devices ltd

    LTL-201

    Abstract: LTL-231 diode e4e LTL-211 LTL-221 LTL-251 LTL-291
    Text: ^-_TAIIilAN LITÔN ELECTRONIC 2 ME ]> • fl A3 SS 47 00 002 42 1 T-l 3mm SOLID STATE LAMPS LTL-231 LTL-251 LTL-291 LTL-201 R E D LTL-211 BR IG H T R E D LTL-221 H IG H E F F IC IE N C Y R E D SPECIALIST GREEN YELLOWORANGE FEATURES • LOW POWER CONSUMPTION.


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    PDF LTL-201 LTL-211 LTL-221 LTL-231 LTL-251 LTL-291 diode e4e

    EDH411MN-10

    Abstract: EDH411MN-12 EDH411MN-15
    Text: Electronic Designs ln< - ' . EDH411MN-10/12/15 . < ^ ^ \ s v • -» •» V \ ' »v • PINOUTS VC C RASO DOUT A3 A6 □ IN WE RÂS1 AO A7 A8 C AS RAS2 c C C c c c C 8 c 9 c 17 C 18 C vc c vss • C om m on D IN /D O U T lines w ith separate RAS co ntro l


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    PDF EDH411MN-10/12/15 EDH411MN EDH411MN-10 EDH411MN-12 EDH411MN-15

    CRZ 2005

    Abstract: 16KX8 vqc 10 d VH192 CTZ FCC 16
    Text: 9H Electronic Designs li ED H88H16C-55/70/1C MILITARY 16K x 8 SRAM CMOS < # FEATURES PINOUTS 1 □ 2 □ 27 □ 26 □ 2S AS 3 24 A9 □ 23 A3 c c 3 c 4 c 5 c 6 c 7 c 28 3 23 NC A2 ê c 3 21 AIO A1 9 c 3 20 CEO AO 10 c 3 19 007 DOO 11 c P 1« DQ6 001 12 c


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    PDF EDH88H16C-55/70/1C EDH88H16C EDH88H16C CRZ 2005 16KX8 vqc 10 d VH192 CTZ FCC 16