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    A3 SOT 23 Search Results

    A3 SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    A3 SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mark a3 sot23

    Abstract: MARKING A3 sot23 KDS181
    Text: SEMICONDUCTOR KDS181 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 A3 1 2 Item Marking Description Device Mark A3 KDS181 - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		KDS181 OT-23 mark a3 sot23 MARKING A3 sot23 KDS181 PDF

    ISS181

    Abstract: 1SS181 MARKING A3
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.92V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. CATHODE MARKING: A3 2. CATHODE 3. ANODE


    Original     		OT-23 1SS181 OT-23 100mA ISS181 ISS181 1SS181 MARKING A3 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 SOT-23 Switching Diodes FEATURES y Low forward voltage y Fast reverse recovery time MARKING: A3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage


    Original     		OT-23 1SS181 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCO 150 Single Thyristor Module ITRMS = 234 A VRRM = 1200-1600 V ITAV = 149 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 150-12io1 MCO 150-16io1 A3 K4 A3 Symbol Test Conditions ITRMS ITAV TVJ = TVJM


    Original     		OT-227 150-12io1 150-16io1 PDF

    single thyristor

    Abstract: 150-12io1
    Text: MCO 150 Single Thyristor Module ITRMS = 234 A VRRM = 1200-1600 V ITAV = 149 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 150-12io1 MCO 150-16io1 A3 K4 A3 Symbol Test Conditions ITRMS ITAV TVJ = TVJM


    Original     		OT-227 150-12io1 150-16io1 single thyristor 150-12io1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCO 150 Single Thyristor Module ITRMS = 234 A VRRM = 1200-1600 V ITAV = 149 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 150-12io1 MCO 150-16io1 A3 K4 A3 Symbol Test Conditions ITRMS ITAV TVJ = TVJM


    Original     		OT-227 150-12io1 150-16io1 PDF

    smd sot23 marking A3

    Abstract: smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3 CMBD2835 CMBD2836
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 3 SOT-23 Formed SMD Package Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2


    Original     		CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 2836Rev050302 smd sot23 marking A3 smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS181 Switching Diodes SOT-23 1. CATHODE 2. CATHODE 3. ANODE Features — — Low forward voltage : VF 3 =0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: A3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol


    Original     		1SS181 OT-23 100mA PDF

    1SS181

    Abstract: No abstract text available
    Text: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: A3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Ta = 25OC


    Original     		1SS181 OT-23 100mA 1SS181 PDF

    marking CODE A3

    Abstract: 1SS181 code a3 sot 724 1SS181 a3 sot 23 "marking code A3"
    Text: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features x Small package x Low forward voltage x Fast reverse recovery time x Small total capacitance 1. CATHODE 2. CATHODE 3. ANODE Marking Code: A3 SOT-23 Plastic Package Applications Ultra high speed switching application


    Original     		1SS181 OT-23 100mA marking CODE A3 1SS181 code a3 sot 724 1SS181 a3 sot 23 "marking code A3" PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2


    Original     		CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 2836Rev050302 PDF

    smd diode marking A3 sot23

    Abstract: DIODE smd marking A3 CMBD2835 CMBD2836
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 3 SOT-23 Formed SMD Package Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2 High-Speed Switching Dual Diodes, Common Anode


    Original     		ISO/TS16949 CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 smd diode marking A3 sot23 DIODE smd marking A3 PDF

    dallas date code ds12887

    Abstract: dallas date code P23073 DS1225A DALLAS DS80C320 9832 P23403 dallas date code ds80c320 P23074
    Text: RELIABILITY MONITOR STRESS: ULTRASOUND CONDITIONS: J-STD-020 MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. PACKAGE DS1233 A5 JAN 99 P23064 9842 CARSEM DM823017AB SOT-223 DS1803 A2 NOV 98 P22797 9833 CHIPPAC, KOREA DS1869 A3 MAR 99 P23360


    Original     		J-STD-020 DM823017AB DS1233 DS1803 DS1869 DS2109 DS2153 DS2175 DS5002 P23064 dallas date code ds12887 dallas date code P23073 DS1225A DALLAS DS80C320 9832 P23403 dallas date code ds80c320 P23074 PDF

    Si2303DS

    Abstract: A3 MARKING CODE
    Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2303DS O-236 OT-23) 18-Jul-08 A3 MARKING CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2303DS O-236 OT-23) 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2303ADS O-236 OT-23) Si2303DS S-20213â 01-Apr-02 PDF

    POD-SOT23

    Abstract: 527AK MO-178 L2 SOT23-8
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23, 8 Lead CASE 527AK−01 ISSUE A DATE 18 MAR 2009 SYMBOL E1 e E b PIN #1 IDENTIFICATION NOM MAX A 0.90 1.45 A1 0.00 0.15 A2 0.90 A3 0.60 0.80 b 0.28 0.38 c 0.08 0.22 1.10 1.30 D 2.90 BSC E 2.80 BSC E1 1.60 BSC


    Original     		OT-23, 527AK-01 MO-178. 98AON34327E 527AK POD-SOT23 527AK MO-178 L2 SOT23-8 PDF

    a3 sot143

    Abstract: BAR60 BAR61 VPS05178 BC238 EHM07026 EHA07013
    Text: BAR 60, BAR 61 Silicon PIN Diodes 3 • RF switch, RF attenuator for frequencies above 10 MHz 4 BAR 60 2 BAR 61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR 60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT-143 BAR 61 61s


    Original     		VPS05178 EHA07013 EHA07014 OT-143 EHD07070 EHD07071 Oct-05-1999 BAR60 EHM07025 a3 sot143 BAR60 BAR61 VPS05178 BC238 EHM07026 EHA07013 PDF

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


    OCR Scan     		OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241 PDF

    JR MARKING

    Abstract: No abstract text available
    Text: IMBD4448 Silicon Epitaxial Planar Diode Fast switching diode in case SOT-23, especially suited for automatic insertion. Top View Marking A3 Top View m SOT-23 Plastic Package Weight approx. 0.008 g Dimensions in mm oo" Absolute M aximum Ratings Symbol Value


    OCR Scan     		IMBD4448 OT-23, OT-23 JR MARKING PDF

    1SS193

    Abstract: No abstract text available
    Text: 1SS193 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm hQ 5 FEATURES: 2.5-a3 . Small Package SOT-23M0D . Low Forward Voltage V p = 0 .9 V Typ. . Fast Reverse Recovery Time trr= l ,6ns(Typ.) . Small Total Capacitance Ct =0 .9pF(Typ.)


    OCR Scan     		1SS193 OT-23M0D 01/tF 1SS193 PDF

    sot23 marking y5

    Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A


    OCR Scan     		OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6 PDF

    Untitled

    Abstract: No abstract text available
    Text: SÌ2303DS VISMAY Siliconix ▼ P-Channel 30-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „s (V) r d s (ON) lD (A) (q ) 0.240 @ V GS = —10 V - 1 .7 0.460 @ V GS = —4.5 V - 1 .3 -3 0 TO -236 (SOT-23) G 1 3 D Top View S Ì2303D S (A3)* *M arking Code


    OCR Scan     		2303DS OT-23) 2303D S-49557-- 27-Apr-98 PDF

    TRANSISTORE

    Abstract: BFS18 BFS19 Q62702 Q62702-F349
    Text: BFS 18 BFS 19 N P N - T r a n s i s t o r e n - H F BFS 18 und BFS 19 sind epitaktische NPN-Silizium-Planar-Transistoren im Gehäuse 23 A3 DIN 41 869 SOT-23 . Die Transistoren wurden speziell für HIF-Schaltungen in Dick- und Dünnfilmtechnik geschaffen. Zur Kennzeichnung des Typs wejrden die Transistoren folgender­


    OCR Scan     		BFS18 BFS18 OT-23) Q62702â Q62702-F349 0AH03 BFS19 TRANSISTORE BFS19 Q62702 Q62702-F349 PDF