heds 5310
Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
Text: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»
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cq1565rt
Abstract: Q1565RT 817A OPTO-coupler cq-1565rt EER 4245 FSCQ1565RT CQ1565RT pwm application notes CQ1565 transistor A431 ka5q1265rf
Text: www.fairchildsemi.com FSCQ1565RT Green Mode Fairchild Power Switch FPSTM for Quasi-Resonant Switching Converter Features • Optimized for Quasi-Resonant Converter (QRC) • Advanced Burst-Mode operation for under 1 W standby power consumption • Pulse by Pulse Current Limit (8A)
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FSCQ1565RT
cq1565rt
Q1565RT
817A OPTO-coupler
cq-1565rt
EER 4245
FSCQ1565RT
CQ1565RT pwm application notes
CQ1565
transistor A431
ka5q1265rf
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431AK
Abstract: KIA 431B 431t KIA431B 431A KIA KIA431A KIA431T kla431 431a kia 431
Text: S E M IC O N D U C T O R KIA431 Series TECHNICAL DATA b ip o l a r l in e a r in t e g r a t e d c ir c u it P R O G R A M M A B L E P R E C IS IO N R E F E R E N C E S The Kl A431 Series integrated circuits are three-terminal programmable shunt regulator diodes.
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KIA431
100mA
431AK
KIA 431B
431t
KIA431B
431A KIA
KIA431A
KIA431T
kla431
431a
kia 431
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KIA431
Abstract: KIA431A KIA431AF kla431 KIA431B a431 ic KEC MARKING CODE KIA431T AX. A431 kz sot23
Text: S E M IC O N D U C T O R KIA431 Series TECHNICAL DATA b ip o l a r l in e a r in t e g r a t e d c ir c u it P R O G R A M M A B L E P R E C IS IO N R E F E R E N C E S The Kl A431 Series integrated circuits are three-terminal programmable shunt regulator diodes.
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KIA431
100mA
KIA431A
KIA431AF
kla431
KIA431B
a431 ic
KEC MARKING CODE
KIA431T
AX. A431
kz sot23
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A431
Abstract: astec ps A431D ASTEC SEMICONDUCTOR ASTEC AS431 TO 92 AS431 A431 sot89 tl a431 A431 Programmable Voltage Reference astec as431
Text: <x//x> AS431 ASTEC Precision Adjustable Shunt Reference Featu res D escription • Temperature-compensated: 30 ppm/°C The AS431 is a three-terminal adjustable shunt regulator providing a highly accurate 0.5% bandgap reference. The adjustable shunt regulator is ideal for a wide variety of linear
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AS431
AS431
A431
astec ps
A431D
ASTEC SEMICONDUCTOR
ASTEC AS431 TO 92
A431 sot89
tl a431
A431 Programmable Voltage Reference
astec as431
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a431 ic
Abstract: LM 2536 A431 ASTEC AS431 TO 92 ASTEC SEMICONDUCTOR AS431 A431 Programmable Voltage Reference
Text: <////> ASTEC AS431 Precision Adjustable Shunt Reference Features Description • Temperature-compensated: 30 ppm/°C The AS431 is a three-terminal adjustable shunt regulator providing a highly accurate 0.5% bandgap reference. The adjustable shunt regulator is ideal for a wide variety of linear
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OCR Scan
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AS431
AS431
a431 ic
LM 2536
A431
ASTEC AS431 TO 92
ASTEC SEMICONDUCTOR
A431 Programmable Voltage Reference
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EST TL431
Abstract: ASTEC AS431 TO 92 Astec Semiconductor a431 ic A431 AS431 A431 sot89 A431 Programmable Voltage Reference
Text: djustable Shunt Reference AS431 AS431 ASTEC Precision Adjustable Shunt Reference #w I Ev Features Description • Temperature-compensated: 30 ppm/°C The AS431 is a three-terminal adjustable shunt regulator providing a highly accurate 0.5% bandgap reference. The
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AS431
AS431
EST TL431
ASTEC AS431 TO 92
Astec Semiconductor
a431 ic
A431
A431 sot89
A431 Programmable Voltage Reference
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A0651
Abstract: MA2401 AX. A431
Text: HYBRID I.C.s “H i-Net” Diode Arrays im H ig h - s p e e d s w it c h i n g d io d e arrays a n d h ig h v o lt a g e - w it h s l a n d C O N ' s s t a n d a n d se ries. T h e y are c o m b i n e d d e c im a l s yste m s H ig h -s p e e d general e le c tro n ic
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LA0656
LA0657
A0432
ZHMA2401
MA2401
ZHMA2402
MA2402
A0651
MA2401
AX. A431
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diode js7
Abstract: ESAC82M-004 V125 A431
Text: ESA C 82M -004 ioa S C H O TTK Y B A R R IE R D IO D E • t t A : Features In su la te d p a ckag e by fu lly m o ld in g , • iavF Lo w V F C o n n e c tio n D ia g ra m S u p e r h ig h spe ed s w itc h in g . • i— H ig h re lia b ility by p la n e r d e s ig n .
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ESAC82M-004
500ns
diode js7
V125
A431
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BR47
Abstract: A751 a1r8 A910 BR33 A3R6 br27 BR56 br75
Text: ★QPL * ER Series MiL-c-39010 Established Reliability Inductors Physical Parameters and Environmental Characteristics 1 E R 1641 I1 h/iil -c 39010/01 MIL-C39010/02 Inductance Range, |jH .10 to .82 .91 to 12.0 15 to 1000 Core Material Phenolic Iron Ferrite
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MiL-c-39010
c39010/01
MIL-C39010/02
MIL-C39010/03
MIL-C39010/05
ER1025-36*
ER1025-37*
ER1025-38*
ER1025-39*
ER1025-40*
BR47
A751
a1r8
A910
BR33
A3R6
br27
BR56
br75
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equivalent ka431lz
Abstract: 431 regulator
Text: KA431 Industrial ELECTRONICS P R O G R A M M A BLE SHUNT R EG ULATO R TO-92 The KA431/A are three-terminal adjustable regulator series with a guaranteed thermal stability over applicable temperature ranges. The output voltage may be set to any value between V REF approximately 2.5
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KA431
KA431/A
003bl3S
8-DP-300
U-DP-300
equivalent ka431lz
431 regulator
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BR47
Abstract: 53742
Text: ►►►MIL-C-39010 Established Reliability Inductors Physical Parameters and Environmental Characteristics ER 1641 1 MIL-C39010/01 MIL-C39010/02 MIL-C39010/03 Inductance Range, pH 10 to .82 Core Material Phenolic Iron Ferrite Iron Iron Ferrite .410 ±.020
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OCR Scan
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MIL-C-39010
MIL-C39010/01
MIL-C39010/02
MIL-C39010/03
MIL-C39010/04
BR47
53742
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AX. A431
Abstract: AZ60
Text: 1 0 4 8 ,5 7 6 W O R D X * This is advanced information and specifica tions are subject to change without notice. 4 BIT D Y N A M IC R A M DESCRIPTION The TC514402AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
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TC514402AP/AJ/ASJ/AZ
300/350mil)
TC514402AP/AJ/ASJ/AZ.
TC514402AP/AJ/ASJ/AZ-60
AX. A431
AZ60
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AX. A431
Abstract: TC5118160A TOSHIBA 5118160 TC5118160AJ 5118160AJ
Text: TOSHIBA TC511816QAJ/AFT -70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The T C 5118160 AJ/A FT is the new generation dynam ic RAM organized 1,048,576 word by 16 bit. The TC5118160A J/A FT utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit
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TC511816QAJ/AFT
TC5118160A
TC511816QAJ/AFT-70/80
rai8160AJ/AFT-70/80
TC5118160AJ/AFT-70/80
AX. A431
TOSHIBA 5118160
TC5118160AJ
5118160AJ
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BZ-10
Abstract: Bz10 ZIP40 S3CA a401 equivalent
Text: T EN TA TIV E D A TA 65,536 W O R D x 16 BIT D Y N A M IC RAM D E S C R IP T I O N The TCS11664BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit
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TC511664BJ/BZ
BZ-10
Bz10
ZIP40
S3CA
a401 equivalent
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Untitled
Abstract: No abstract text available
Text: 1 0 4 8 ,5 7 6 W O R D x 4 BIT DYNAM IC RAM * This is advanced information and specifica tions are subject to change without notice. D ESC R IP T IO N The T C 514402A P /A J/A SJ/A Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The T C 514402A P /A J/A SJ/A Z utilizes TO SH IBA ’S CMOS Silicon gate process technology as well as
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14402A
TC514402AP/AJ/ASJYAZ
300/350m
TC514402AP/AJ/ASJ/AZ-60
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A434
Abstract: a431 equivalent AZ60 TC514402AP ZIP20-P-400A a423 power
Text: 1 0 4 8 ,5 7 6 W O R D x 4 BIT D Y N A M I C R A M *' T h is is adv an ced inform ation a n d sp ecifica tions a re subject to ch a n ge w ithout notice. D E S C RIPTIO N The T C 5 1 4 4 0 2 A P /A J/A S J/A Z is the new g e n e ratio n dy n am ic RA M o rgan ized 1 ,0 4 8 ,5 7 6 w ords by 4
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TC514402AP/AJ/ASJ/AZ
300/350mil)
TC514402AP/AJ/ASJ/AZâ
TC514402AP/AJ/ASJ/AZ-80
TC514402AP/AJ/ASJ/AZ-10
TC514402AP/AJ/ASJ/AZ-60
A434
a431 equivalent
AZ60
TC514402AP
ZIP20-P-400A
a423 power
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2N929/51
Abstract: A431 GI3707 GI3711 AT344 GI3793 GME3001 PET3001 T018 MT1061A
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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2N3633/52
ME8101
TIX895
1300M5A
1500MS
2500M5
2N2446
2N2379
3000MIA
4000Mt
2N929/51
A431
GI3707
GI3711
AT344
GI3793
GME3001
PET3001
T018
MT1061A
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PDF
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TC5118160AJ
Abstract: No abstract text available
Text: TOSHIBA TC5118160AJ/AFT-70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5118160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5118160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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OCR Scan
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TC5118160AJ/AFT-70/80
TC5118160AJ/AFT
002S750
G055751
TC5118160AJ
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PDF
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VU04
Abstract: No abstract text available
Text: TENTATIVE DATA 65,536 WORD x 16 BIT DYNAMIC RAM DESCRIPTION The TC511664BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well a s advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed
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TC511664BJ/BZ
VU04
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PDF
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T0106
Abstract: 2n1763 LOON pl 40 A431 AT344 GI3793 GME3001 PET3001 T018
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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B170024
4000n
T0106
2n1763
LOON
pl 40
A431
AT344
GI3793
GME3001
PET3001
T018
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PDF
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IDT7MP6104
Abstract: No abstract text available
Text: 128KB/256KB SECONDARY CACHE MODULE FOR THE INTEL i486 “ IDT7MP6104 IDT7MP6105 Integrated D evice T ech n olo g y, Inc. FEATURES DESCRIPTION • 128KB/256KB direct mapped, write-through, non-sectored, zero-wait-state secondary cache module • Ideal for use with ¡486-based systems
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OCR Scan
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128KB/256KB
IDT7MP6104
IDT7MP6105
486-based
IDT71589
IDT71B74
i486TM
33MHz
oteTN14
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PDF
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usaf516es047m
Abstract: transistor T01A transistor 2SC114 usaf517es060m usaf516es048m fzj 165 R117A 2SC114 transistor transistor A431 AT344
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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PT6905A
PT6905B
PT6905C
100msa
100m5a
MM2261
MM2262
MM2263
usaf516es047m
transistor T01A
transistor 2SC114
usaf517es060m
usaf516es048m
fzj 165
R117A
2SC114 transistor
transistor A431
AT344
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PDF
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ma7805
Abstract: BFR14 AT344 GI3793 GME3001 PET3001 T018 2N3082 BSV56 Ro-270
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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Voff-200uV.
NS8000
NS8003
OC740
Pt-500mW;
BVCBO-12V;
50-1500KC.
Voff-100uV;
0-50KC.
ma7805
BFR14
AT344
GI3793
GME3001
PET3001
T018
2N3082
BSV56
Ro-270
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PDF
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