A6 marking
Abstract: Si2306DS Si2306DS-T1
Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code
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Si2306DS
O-236
OT-23)
Si2306DS-T1
25lectual
18-Jul-08
A6 marking
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Untitled
Abstract: No abstract text available
Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code
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Si2306DS
O-236
OT-23)
Si2306DS-T1
08-Apr-05
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Si2306DS
Abstract: No abstract text available
Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V "3.5 0.094 @ VGS = 4.5 V "2.8 – TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2306DS
O-236
OT-23)
S-56945--Rev.
23-Nov-98
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SOT 23 marking code a6 diode
Abstract: Si2306DS Si2306DS-T1
Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code
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Si2306DS
O-236
OT-23)
Si2306DS-T1
S-31873--Rev.
15-Sep-03
SOT 23 marking code a6 diode
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VUB160-16NOX
Abstract: VUB160-16
Text: VUB160-16NOX 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 188 A I C25 IFSM = 220 A = 1100 A VCE sat = 1.95 V 3~ Rectifier Bridge + Brake Unit Part name VUB160-16NOX M1/O1 S1 U1/ W1 ~A6 ~E6 ~K6 M10/O10 W U S/T 10 10 10
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VUB160-16NOX
M10/O10
60747and
20111102a
VUB160-16NOX
VUB160-16
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VUB120-16NOX
Abstract: No abstract text available
Text: VUB120-16NOX 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 188 A I C25 IFSM = 155 A = 1100 A VCE sat = 1.9 V 3~ Rectifier Bridge + Brake Unit Part name M1/O1 S1 U1/ W1 ~A6 ~E6 ~K6 M10/O10 W U S/T 10 10 10 Features / Advantages:
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VUB120-16NOX
M10/O10
60747a
60747and
20111102a
VUB120-16NOX
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VUB120-16NOX
Abstract: No abstract text available
Text: VUB120-16NOX 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 188 A I C25 IFSM = 155 A = 1100 A VCE sat = 1.9 V 3~ Rectifier Bridge + Brake Unit Part name VUB120-16NOX M1/O1 S1 U1/ W1 ~A6 ~E6 ~K6 M10/O10 W U S/T 10 10 10
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VUB120-16NOX
M10/O10
60747and
20111102a
VUB120-16NOX
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VUB160-16NOX
Abstract: No abstract text available
Text: VUB160-16NOX 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 188 A I C25 IFSM = 220 A = 1100 A VCE sat = 1.95 V 3~ Rectifier Bridge + Brake Unit Part name M1/O1 S1 U1/ W1 ~A6 ~E6 ~K6 M10/O10 W U S/T 10 10 10 Features / Advantages:
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VUB160-16NOX
M10/O10
60747and
20111102a
VUB160-16NOX
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TQ6122AM
Abstract: TQ611 TQ6122-M 2291C DAC-IC lm337mt MC33071 TQ6122 TQ6122-D MC1403A
Text: T R I Q U BLANK I N T A5 A4 A0 B0 S E M I C O N D U C T O R, I N C . B4 B5 TQ6122 A7 MSB A6 B6 B7 ECL INPUT BUFFERS MULTIPLEXER V SS (-5 V) D DGND CLK CLK BLANKING LOGIC Q BLANK D0 D4 D5 D6 D7 QBLANK Q0 Q4 Q5 Q6 Q7 + – MASTER LATCH Features BINARY-TO-N-OF-7
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TQ6122
TQ6122AM
TQ611
TQ6122-M
2291C
DAC-IC
lm337mt
MC33071
TQ6122
TQ6122-D
MC1403A
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Untitled
Abstract: No abstract text available
Text: RF2360 Preliminary 3 LINEAR GENERAL PURPOSE AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description 0.158 0.150 The RF2360 is a general purpose, low-cost, high-linearity
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RF2360
RF2360
OP-16
1000MHz,
03MHz
3000MHz
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TCET110G
Abstract: pin diagram of IC 7402 TCET110 TCET1100 TCET1100G1 TCET1101 TCET1101G1 TCET1102 TCET1102G TCET2100
Text: TCET110. G up to TCET4100 Vishay Telefunken Optocoupler with Phototransistor Output Description The TCET110./ TCET2100/ TCET4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic
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TCET110.
TCET4100
TCET110
TCET2100/
TCET4100
16-lead
D-74025
TCET110G
pin diagram of IC 7402
TCET1100
TCET1100G1
TCET1101
TCET1101G1
TCET1102
TCET1102G
TCET2100
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marking lth
Abstract: No abstract text available
Text: Silicon Switching Diode • BAS16 F o r h ig h -sp e e d sw itching C Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B A S 16 A6 Q 62 70 2-A 72 6 Q 62 70 2-A 73 9 S O T 23 Maximum ratings Parameter Symbol Ratings
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BAS16
marking lth
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54F04
Abstract: No abstract text available
Text: MOTOROLA Military 54F04 Hex 1-In p u t In v e rte r G ate MP0 uum ELECTRICALLY TESTED PER: MIL-M-38510/33002 AVAILABLE A S: LOGIC DIAGRAM V X A6 Y6 r¥i nri A5 N Y5 A4 n°l rri 1 JAN : JM38510./33002BXA 2) S M D : * 3) 883C: 54F04/BXAJC Y4 m X = C A S E OU TLIN E A S FO LLOW S:
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54F04
MIL-M-38510/33002
JM38510
/33002BXA
54F04/BXAJC
54F04
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2SD143
Abstract: 2SB1032 2SD1436 T4 sm diode
Text: HITACHI 2SB1032 K SILICON PNP T RIPLE DIFFUSED PO W ER SWITCHING COMPLEMENTARY PAIR WITH 2SD1436 3 4 t -a », B»e 2. Cûiiciior _ 04tea F la n g e 3. Eiiiilier 16 lutti (D im e n s io n s in m m ) (ty p ) t-M a6 d IX T (TO-3P) MAXIMUM COLLECTO R DISSIPATION
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2SB1032
2SD1436Â
23B1032Â
2SD143
2SD1436
T4 sm diode
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Untitled
Abstract: No abstract text available
Text: VUO 120 VUO 155 n ix Y S Three Phase Rectifier Bridge •dAVM V RRM — 121/157 A 1200-1600 V Preliminary Data V RRM Type V V V RRM 1200 VUO 120-12 NOI 1200 VUO 155-12 NOI Symbol 1600 1600 O M 1/01 Type VUO 120-16 NO I VUO 155-16 NO I A6 0E6 0K 6o- Test Conditions
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OM10/010
VU0155
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Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 15-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data VCES = 600 V Ì 'C25 = 18 A Vnc, H= 2.1 V CE(sat) > VCES = 600 V 'C25 = 1 1 A II VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM u t(s a t)
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sab 2403
Abstract: 18F25
Text: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE INTERSIL C D54/74FC T653, CD54/74FCT653AT C D 54/74FC T654, CD54/74FCT654AT July 1990 A DATA PORT • BO • B1 • B2 - B3 . B4 . BS • B6 . B7 A0A1 A2A3A4 AS A6 A7 - OEBA OEAB F U P * f CAB CLOCK
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D54/74FC
CD54/74FCT653AT
54/74FC
CD54/74FCT654AT
CD54/74FCT653,
CD54/74FCT654,
CD54/74FCT654AT
FCT653,
FCT654)
sab 2403
18F25
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CD74ACT245
Abstract: No abstract text available
Text: Technical D a ta _ CD 54/74A C 245 C D 54/74A C T245 BO AO A1 Octal-Bus Transceiver, 3-State, Non-Inverting * A? - -B 2 A 3 -i • B3 A4 - -B 4 A5- BS A6- B6 B7 A7 D IR - Type Features: • Buffered inputs m Typical propagation delay: 4 n s @ V c c = 5 V , T * = 25°C, CL = 50 pF
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54/74A
92CS-3e468
51FUNCTIONAL
CD54/74AC245
CD54/74ACT245
700-M
CS-42406
CD54/74AC
CD54/74ACT
CD74ACT245
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G907
Abstract: A60FI P5NA60
Text: *57 SGS-THOMSON 60 S T P 5 N A6 0 F I stpsna iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA60 STP5N A60FI • . . ■ ■ . ■ V dss R DS(on) Id 600 V 600 V < 1.6 a < 1.6 a 5.3 A 3.4 A TYPICAL RDS(on) = 1.35 £2 ± 30V GATE TO SOURCE VOLTAGE RATING
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STP5NA60
A60FI
G907
A60FI
P5NA60
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6R130G
Abstract: 120 A diode newave power R601 IMRM
Text: mmm _ _ _ üm e 6-Pack Diode 6R I3OE-060/080 POWER DIODE M ODULE 6%7V • O u tlin e D raw in g s 4-C2 -j i I <A6 5 ■ 1 ! i i & 'ZsM îL . F eatu res — P - irt>i : A ll the term in als and th e m o u n tin g plate are electrically J3 „ isolated. These m od ules can be installed in the same
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6RI30E-060/080
30E-060/080
6R130G
120 A diode
newave power
R601
IMRM
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3Na60
Abstract: No abstract text available
Text: *57 SGS-THOMSON 3NA60 S T P 3 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3N A60FI V dss R DS(on) Id 600 V 600 V < 4 a <4 a 2.9 A 2.1 A . T Y P IC A L R Ds (on) = 3.3 Q m ± 30V G A TE TO S O U R C E V O LTA G E R ATING
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3NA60
STP3NA60
A60FI
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F02S
Abstract: bd4448 D4148
Text: IIAIEt SURFACE MOUNT SWITCHING DIODES 350 mW SWITCHING DIODES/TO-236 Device Type P eak Reverse Voltage VRM : V V Marking Code : BAS 16 8A V 70 BAV99 B AW 56 BAL99 IM B D 4148 IM B D 4448 A6 JJ JE JD JF A2 A3 O P E R A T IN G /S TO R A G E TE M P E R A TU R E R A N G E -65°C to +175°C
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DIODES/TO-236
BAV99
BAL99
DF005S
DF04S
SDF01
F02S
bd4448
D4148
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7NA60
Abstract: No abstract text available
Text: *57 SGS-THOMSON 7NA60 S T P 7 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7N A 60 STP7NA60FI • • . ■ ■ . ■ V dss R DS(on) Id 600 V 600 V < 1 a < 1 a 7.2 A 4 .4 A T Y P IC A L RDS(on) = 0.92 Q ± 30V G A TE TO S O U R C E V O LTA G E R ATING
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STP7NA60FI
7NA60
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IN3492
Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90
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3E120
450E120R
450F05
450F05R
450F10
450F10R
450F20
450F20R
450F30
450F30R
IN3492
sg 4001 diode
1NA4
md914
35C10
1N20b
1n67a
0a202 diode
iN3495
1469r
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